OPTODIODE SXUV20HS1

PHOTODIODE Ø5 mm
SXUV20HS1
FEATURES
•
•
•
•
•
Circular active area
Ideal for EUV detection
100% internal QE
High speed
Grid lines 5 microns,
Pitch 100 microns
• RoHS and REACH compliant
RoHS
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity, R
TEST CONDITIONS
MAX
Capacitance, C
VR = 0V
UNITS
mm2
A/W
(see graphs on next page)
IR = 1µA
Dark Current
TYP
19.7
Ø5.01mm
Reverse Breakdown Voltage, VR
Rise Time
MIN
160
Volts
200
800
pF
RL = 50Ω, VR = 150V
2
nsec
VR = 150V
100
nA
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
Nitrogen or Vacuum
-10° TO 40°C1
-20°C TO 80°C
Lead Soldering Temperature2
260°C
1
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
2
0.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision July 1, 2013
PHOTODIODE Ø5 mm
Responsivity (A/W)
0.35
SXUV20HS1
PHOTON RESPONSIVITY
0.30
0.25
0.20
0.15
0.10
0.05
0.0
1
10
Wavelength (nm)
100
1000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision July 1, 2013