PHOTODIODE Ø5 mm SXUV20HS1 FEATURES • • • • • Circular active area Ideal for EUV detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns • RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS MAX Capacitance, C VR = 0V UNITS mm2 A/W (see graphs on next page) IR = 1µA Dark Current TYP 19.7 Ø5.01mm Reverse Breakdown Voltage, VR Rise Time MIN 160 Volts 200 800 pF RL = 50Ω, VR = 150V 2 nsec VR = 150V 100 nA THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 Nitrogen or Vacuum -10° TO 40°C1 -20°C TO 80°C Lead Soldering Temperature2 260°C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 2 0.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision July 1, 2013 PHOTODIODE Ø5 mm Responsivity (A/W) 0.35 SXUV20HS1 PHOTON RESPONSIVITY 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 Wavelength (nm) 100 1000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision July 1, 2013