Memory ICs System reset IC BH6150F The BH6150F has two reset circuits, one detects the power supply voltage, and the other detects the input voltage. With this one IC it is possible to apply a reset to the logic systems of CPUs, and mechanical systems. Applications •Personal computers, CPUs, MPUs, logic circuits, reset circuits for mechanical systems, level detector circuits, battery voltage detector circuits, and backup power supply switching circuits •TwoFeatures types of reset circuit provided. 1) Reset circuit 1 (input voltage detector) Detection voltage: 1.25V (Typ.) Transmission delay time: 200µs (Typ.) Open collector output, and 10kΩ pull-up resistor on chip. 2) Reset circuit 2 (supply voltage detector) Detection voltage: 4.2V (Typ.) Transmission delay time: 25, 50, 100 and 200 ms (select using the Ct0 and Ct1 pins) Manual reset function provided Open collector output, and 10kΩ pull-up resistor on chip. •Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Symbol Limits Unit VCC – 0.3 ~ + 7.0 V mW Pd 450∗ Operating temperature Topr – 20 ~ + 75 °C Storage temperature Tstg – 40 ~ + 125 °C Power dissipation ∗ Reduced by 4.5mW for each increase in Ta of 1°C over 25°C. 1 Memory ICs BH6150F •Block diagram 8 7 6 10k Reset Circuit 1 – + 5 – Vref 1.25V Reset Circuit 2 10k + – Delay Circuit Vref 1.25V 1 2 3 •Pin descriptions Pin No. Pin name Function 1 Ct0 Delay time control∗ 2 Input Reset circuit 1 input 3 Ct1 Delay time control∗ 4 GND 5 Output 2 Reset circuit 2 output 6 Output 1 Reset circuit 1 output 7 VCC 8 Manual reset GND Power supply Manual reset input ∗ When neither Ct0 or Ct1 are connected, the delay time is 100ms (Typ.). 2 4 Memory ICs BH6150F •Input / output circuits Ct0, Ct1 Input Manual reset Output 1, Output 2 3 Memory ICs BH6150F Electrical characteristics (unless otherwise specified V •Reset circuit 1 Parameter CC = 4.5V to 5.5V and Ta = 25°C) Symbol Min. Typ. Max. Unit Conditions Detection voltage VS1 1.20 1.25 1.30 V — Hysteresis voltage ∆VS1 9 15 23 mV — High level transmission delay time TPLH1 80 200 500 µs CL = 100pF Low level transmission delay time TPHL1 — 10 — µs CL = 100pF Output low level voltage VOL1 — 0.1 0.4 V VIN < 1.2V, IOL = 5mA Input voltage range VIN – 0.3 — VCC V Input current IIN — 200 500 nA — VIN = 1.25V Reset circuit 2 Parameter Symbol Min. Typ. Max. Unit Conditions Detection voltage VS2 4.0 4.2 4.4 V — Hysteresis voltage ∆VS2 30 50 100 mV — High level transmission delay time TPLH2 15 25 35 ms Ct0 = L, Ct1 = H 30 50 70 ms Ct0 = H, Ct1 = L 60 100 140 ms Ct0 = H, Ct1 = H 120 200 280 ms Ct0 = L, Ct1 = L CL = 100pF Low level transmission delay time TPHL2 — 0.5 — µs CL = 100pF Output low level voltage VOL2 — 0.1 0.4 V VCC < 4V, IOL = 5mA Manual reset Input high level voltage VRESH 2 — VCC V Input high level current IRESH — 20 80 µA Input low level voltage VRESL – 0.3 — 0.8 V — VRES = 2V — Common specifications Parameter Circuit current when off Circuit current when on Detection voltage temperature coefficient Symbol Min. Typ. Max. Unit ICC1 — 1000 1400 µA VCC = 5V, VIN > VS1 ICC2 — 2 3 mA VCC = 4V, VIN < VS1 VS / ∆T — 0.01 — % / °C — V IOH = 40µA 0.85 V VSAT ⬉ 0.4V, RL = 1K Output high level voltage VOH1,2 Operation limit voltage VOPL1,2 4 VCC – 0.7 VCC – 0.4 — 0.71 Conditions — Memory ICs BH6150F •Measurement circuit VCC RL = 1k VOPL2: ON CL V VOH1 VOL1 VOPL1 IOH IOL VCC RL = 1k ICC1 ICC2 A IRESH A 8 7 MRES VCC 6 OUT 1 OUT 2 CL BH6150F VCC VRES Ct0 IN Ct1 GND 1 2 3 4 A VIN VOPL2: ON 5 V VOH2 VOL2 VOPL2 IOH IOL IIN ∆VS1 VS1 5 Memory ICs BH6150F •Circuit operation VIN 5V VS1 + ∆VS1 (Typ. = 1.265V) VS1 (Typ. = 1.25V) 0V VOUT1 VOH TPLH1 TPHL1 TPLH1 VOL1 VCC VCC VS2 + ∆VS2 (Typ. = 4.25V) VS2 (Typ. = 4.2V) 0V VOUT2 VOH TPLH2 VOL2 6 TPHL2 TPLH2 Memory ICs BH6150F •Electrical characteristic curves 25 HYSTERESIS VOLTAGE: ∆VS1 (mV) DETECTING VOLTAGE: VS1 (V) 1.35 1.30 1.25 1.20 0 20 40 60 10 0 20 40 60 80 AMBIENT TEMPERATURE: Ta (°C) AMBIENT TEMPERATURE: Ta (°C) Fig. 1 Reset circuit 1 detector voltage vs. ambient temperature Fig. 2 Reset circuit 1 Hysteresis voltage vs. ambient temperature 280 4.4 240 200 160 120 80 – 20 0 20 40 60 4.3 4.2 4.1 4.0 3.8 – 20 80 0 20 40 60 AMBIENT TEMPERATURE: Ta (°C) AMBIENT TEMPERATURE: Ta (°C) Fig. 3 Reset circuit 1 high level transmission delay time vs. ambient temperature Fig. 4 Reset circuit 2 detector voltage vs. ambient temperature “H” PROPAGATION DELAY TIME: TPLH2 (mS) 100 HYSTERESIS VOLTAGE: ∆ VS2 (mV) 15 5 – 20 80 DETECTING VOLTAGE: VS2 (V) “H” PROPAGATION DELAY TIME: TPLH1 (µS) 1.15 – 20 20 80 60 40 20 0 – 20 0 20 40 60 80 80 200 Ct0 = L, Ct1 = L 160 120 Ct0 = H, Ct1 = H 80 Ct0 = H, Ct1 = L 40 Ct0 = L, Ct1 = H 0 – 20 0 20 40 60 80 AMBIENT TEMPERATURE: Ta (°C) AMBIENT TEMPERATURE: Ta (°C) Fig. 5 Reset circuit 2 Hysteresis voltage vs. ambient temperature Fig. 6 Reset circuit 2 high level transmission delay time vs. ambient temperature 7 MAXIMUM OPERATING VOLTAGE: VOPL1, 2 (V) Memory ICs BH6150F 1.0 RL = 1k 0.5 RL = 27k RL = ∞ 0 0 0.5 1.0 POWER SUPPLY VOLTAGE: VCC (V) Fig. 7 Operation limit voltage vs. power supply voltage •External dimensions (Units: mm) 1 4 0.11 1.27 0.15 ± 0.1 4.4 ± 0.2 5 1.5 ± 0.1 6.2 ± 0.3 5.0 ± 0.2 8 0.4 ± 0.1 0.3Min. 0.15 SOP8 8