2SB1697 Transistors Low Frequency Amplifier (-12V, -2A) 2SB1697 zExternal dimensions (Unit : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 zFeatures Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions Abbreviated symbol: FV (1)Base (2)Collector (3)Emitter ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89 zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Collector current Collector power dissipation Junction temperature Storage temperature Limits −15 −12 −6 −2 −4 500 150 −55 to +150 IC PC Tj Tstg Unit V V V A(DC) A(Pulse) ∗1 mW ∗2 °C °C Package Type Taping Code T100 Basic ordering unit (pieces) 1000 2SB1697 ∗1 Single pulse, PW=1ms ∗2 When mounted on a 40x40x0.7 mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −100 − 360 15 Max. − − − −100 −100 −180 680 − − Unit V V V nA nA mV − MHz pF Conditions IC= −10µA IC= −1mA IE= −10µA VCB= −15V VEB= −6V IC/IB= −1A/ −50mA VCE= −2V, IC= −200mA∗ VCE= −2V, IE=200mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz ∗ Pulsed Rev.A 1/2 2SB1697 Transistors 1000 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Ta=100°C −1 Ta=100°C Ta=25°C −0.1 Ta=−40°C −0.01 Ta=25°C Ta=−40°C 100 VCE=−2V VCE=−2V Pulsed Ta=25°C Pulsed −0.001 0 −0.5 −1 10 −0.001 −1.5 −1 −10 1000 Ta=25°C Pulsed −0.1 IC/IB=50 −0.01 IC/IB=20 IC/IB=10 −0.001 −0.1 −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs.collector current −10 10 1 Ta=25°C VCE=−2V f=100MHz 100 0.01 10 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs. emitter current 10 VBE(sat) 0.1 Ta=−40°C Ta=25°C Ta=100°C Ta=100°C Ta=25°C Ta=−40°C VCE(sat) 0.01 0.001 IC/IB=20 Pulsed 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs.collector current Base-emitter saturation voltage vs.collector current Fig.2 DC current gain vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) Fig.1 Grounded emitter propagation characteristics −1 −0.01 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER CURRENT : VBE (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −10 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves 1000 Ta=25°C IE=0A f=1MHz Cib 100 Cob 10 1 −0.1 −1 −10 −100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1