Preliminary Datasheet RJH1CD7DPQ-E0 1200V - 30A - IGBT Application: Inverter R07DS0519EJ0400 Rev.4.00 Jan 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 1200 30 60 30 90 30 90 328.9 0.38 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0519EJ0400 Rev.4.00 Jan 19, 2012 Page 1 of 3 RJH1CD7DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 5 Unit A — 4 — — — — — — — — — — — 2.0 2000 70 45 50 20 110 100 5 ±1 8 — — — — — — — — — A V V pF pF pF ns ns ns ns s VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 30 A, VGE = 15 V Note3 Short circuit withstand time IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc FRD forward voltage FRD reverse recovery time VF trr — — 1.7 200 — — V ns IF = 30 A Note3 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Test Conditions VCE = 1200 V, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VCC = 600 V, VGE = 15 V IC = 30 A Rg = 5 Inductive load VCC 720 V, VGE = 15 V Tc 125°C IF = 30 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0519EJ0400 Rev.4.00 Jan 19, 2012 Page 2 of 3 RJH1CD7DPQ-E0 Preliminary Package Dimension JEITA Package Code RENESAS Code PRSS0003ZE-A Previous Code MASS[Typ.] 6.0g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH1CD7DPQ-E0#T2 R07DS0519EJ0400 Rev.4.00 Jan 19, 2012 Quantity 450 pcs Shipping Container Box (Tube) Page 3 of 3 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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