RENESAS RJP4009ANS

Preliminary Datasheet
RJP4009ANS
R07DS0370EJ0200
Rev.2.00
Apr 27, 2011
Nch IGBT for Strobe Flash
Features
•
•
•
•
•
•
Small surface mount package (VSON-8)
VCES: 400 V
ICM: 150 A @Tc = 70°C, CM = 400 μF
Drive voltage: 2.5 V to 6 V (MAX)
Pb-free
Halogen-free
Outline
RENESAS Package code: PVSN0008JA-A
(Package name: VSON-8<TNP-8DBV>)
5
8
7
6
5
1
2
3
4
1, 2, 3 : Emitter
4 : Gate
5, 6, 7, 8 : Collector
8
4
1
Applications
Strobe flash for cameras
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current (Pulse)
Power dissipation
Junction temperature
Storage temperature
R07DS0370EJ0200 Rev.2.00
Apr 27, 2011
Symbol
VCES
VGES
ICM
Ratings
400
±6
150
Unit
V
V
A
Pj
Tj
Tstg
1.8
–40 to +150
–40 to +150
W
°C
°C
Conditions
VGE = 0 V
VCE = 0 V
CM = 400 μF
(see performance curve)
Page 1 of 4
RJP4009ANS
Preliminary
Electrical Characteristics
(Tj = 25°C)
Parameter
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
—
—
0.4
—
—
Typ.
—
—
0.6
4.0
5500
Max.
1
±10
1.2
9.0
—
Unit
μA
μA
V
V
pF
Test conditions
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCS = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 2.5 V
VCE = 25 V, VGE = 0 V,
f = 1 MHz
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flash Circuit)
Pulse Collector Current ICM (A)
200
150
100
50
0
0
1
2
3
4
5
6
7
Gate - Emitter Voltage VGE (V)
R07DS0370EJ0200 Rev.2.00
Apr 27, 2011
Page 2 of 4
RJP4009ANS
Preliminary
Application Example
VCM
Maximum Operation
Conditions
Trigger Transformer
VCM
ICP
Xe Tube
CM
VGE
CM
+
–
8
7
6
5
IGBT driver
1
2
3
4
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/ μs. In general, when RG (off) = 30 Ω, it is satisfied.
3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over
3 seconds.
R07DS0370EJ0200 Rev.2.00
Apr 27, 2011
Page 3 of 4
RJP4009ANS
Preliminary
Package Dimensions
Package Name
VSON-8
JEITA Package Code
P-VSON8-3x4.4-0.65
RENESAS Code
PVSN0008JA-A
Previous Code
TNP-8DBV
MASS[Typ.]
0.032g
D
LP
L1
1.95 ± 0.1
E
HE
0.15Max
Reference
Symbol
c
A
D
E
A
b
e
LP
e
b
x
x
y
c
HE
M
y
L1
Dimension in Millimeters
Min
2.90
4.30
Nom
3.00
4.40
0.25
0.30
0.65
0.35
0.09
4.70
0.10
0.15
4.80
0.20
Max
3.10
4.50
0.95
0.40
0.08
0.10
0.25
4.90
0.30
Ordering Information
Orderable Part No.
RJP4009ANS-01-Q6
R07DS0370EJ0200 Rev.2.00
Apr 27, 2011
Quantity
3000 pcs
Shipping Container
Taping
Page 4 of 4
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