RENESAS 2SA673_11

Preliminary Datasheet
2SA673, 2SA673A
R07DS0429EJ0300
(Previous: REJ03G0626-0200)
Rev.3.00
Jun 07, 2011
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC1213 and 2SC1213A
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
R07DS0429EJ0300 Rev.3.00
Jun 07, 2011
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA673
–35
–35
–4
–500
400
150
–55 to +150
2SA673A
–50
–50
–4
–500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Page 1 of 4
2SA673, 2SA673A
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
2SA673
Typ
—
Max
—
2SA673A
Min
Typ
Max
–50
—
—
Collector to base
breakdown voltage
V(BR)CBO
Min
–35
Collector to emitter
breakdown voltage
V(BR)CEO
–35
—
—
–50
—
Emitter to base
breakdown voltage
Collector cutoff current
V(BR)EBO
–4
—
—
–4
ICBO
Collector to emitter
saturation voltage
DC current transfer ratio
VCE(sat)
—
—
—
–0.2
–0.5
–0.6
hFE*1
60
—
DC current transfer ratio
hFE
10
Base to emitter voltage
VBE
—
Unit
Test conditions
V
IC = –10 μA, IE = 0
—
V
IC = –1 mA, RBE = ∞
—
—
V
IE = –10 μA, IC = 0
—
—
—
–0.2
–0.5
–0.6
μA
V
VCB = –20 V, IE = 0
320
60
—
320
—
—
10
—
—
–0.64
—
—
–0.64
—
IC = –150 mA,
2
IB = –15 mA*
VCE = –3 V,
IC = –10 mA
VCE = –3 V,
2
IC = –500 mA*
V
VCE = –3 V,
IC =–10 mA
Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
R07DS0429EJ0300 Rev.3.00
Jun 07, 2011
Page 2 of 4
2SA673, 2SA673A
Preliminary
Main Characteristics
Typical Output Characteristics (1)
–100
50
100
–0.5
–0.4
–40
–0.3
–0.2
–20
–0.1 mA
IB = 0
–2
Typical Output Characteristics (2)
–6
–8
–10
Typical Transfer Characteristics
–500
–400
–300
–2
–200
–1 mA
–100
PC = 400 mW
IB = 0
–2
VCE = –3 V
–10
Ta = 75°
C
25
–25
–7
–6
–5
–4
–3
Collector Current IC (mA)
–30
0
–3
–1.0
–0.3
–4
–6
–8
0
–10
DC Current Transfer Ratio vs.
Collector Current
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product fT (MHz)
150
VCE = –3 V
75
50
100
25
0
Ta
50
=
°C
–25
0
–2
–5 –10 –20
–50 –100 –200
Collector Current IC (mA)
R07DS0429EJ0300 Rev.3.00
Jun 07, 2011
–0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC Current Transfer ratio hFE
–4
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Collector Current IC (mA)
–0.6
–60
0
150
W
m
0
–0.7
0
200
–80
–0.9
–0.8
40
400
0
–1.
=
Collector Current IC (mA)
600
PC
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
–500
240
200
VCE = –3 V
160
120
80
40
0
–5
–10
–20
–50 –100 –200
–500
Collector Current IC (mA)
Page 3 of 4
2SA673, 2SA673A
Preliminary
Package Dimensions
Package Name
TO-92(1)
JEITA Package Code
SC-43A
Previous Code
TO-92(1) / TO-92(1)V
RENESAS Code
PRSS0003DA-A
MASS[Typ.]
0.25g
4.8 ± 0.3
Unit: mm
2.3 Max
0.7
0.60 Max
0.55 Max
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5 Max
1.27
2.54
Ordering Information
Part Name
2SA673BTZ-E
2SA673CTZ-E
2SA673DTZ-E
2SA673ABTZ-E
2SA673ACTZ-E
2SA673ADTZ-E
Quantity
Shipping Container
Hold Box, Radial Taping
2500
Notes: 1. For some grades, production may be terminated. Please contact the Renesas sales office to check the state
of production before ordering the product.
2. Leads is forming applied as following figure.
Unit: mm
18.0
9.0
19.0
16.0
24.7 max.
12.7
2.5 2.5
6.35
12.7
R07DS0429EJ0300 Rev.3.00
Jun 07, 2011
4.0
Page 4 of 4
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