Preliminary Datasheet 2SA673, 2SA673A R07DS0429EJ0300 (Previous: REJ03G0626-0200) Rev.3.00 Jun 07, 2011 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature R07DS0429EJ0300 Rev.3.00 Jun 07, 2011 Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA673 –35 –35 –4 –500 400 150 –55 to +150 2SA673A –50 –50 –4 –500 400 150 –55 to +150 Unit V V V mA mW °C °C Page 1 of 4 2SA673, 2SA673A Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol 2SA673 Typ — Max — 2SA673A Min Typ Max –50 — — Collector to base breakdown voltage V(BR)CBO Min –35 Collector to emitter breakdown voltage V(BR)CEO –35 — — –50 — Emitter to base breakdown voltage Collector cutoff current V(BR)EBO –4 — — –4 ICBO Collector to emitter saturation voltage DC current transfer ratio VCE(sat) — — — –0.2 –0.5 –0.6 hFE*1 60 — DC current transfer ratio hFE 10 Base to emitter voltage VBE — Unit Test conditions V IC = –10 μA, IE = 0 — V IC = –1 mA, RBE = ∞ — — V IE = –10 μA, IC = 0 — — — –0.2 –0.5 –0.6 μA V VCB = –20 V, IE = 0 320 60 — 320 — — 10 — — –0.64 — — –0.64 — IC = –150 mA, 2 IB = –15 mA* VCE = –3 V, IC = –10 mA VCE = –3 V, 2 IC = –500 mA* V VCE = –3 V, IC =–10 mA Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 R07DS0429EJ0300 Rev.3.00 Jun 07, 2011 Page 2 of 4 2SA673, 2SA673A Preliminary Main Characteristics Typical Output Characteristics (1) –100 50 100 –0.5 –0.4 –40 –0.3 –0.2 –20 –0.1 mA IB = 0 –2 Typical Output Characteristics (2) –6 –8 –10 Typical Transfer Characteristics –500 –400 –300 –2 –200 –1 mA –100 PC = 400 mW IB = 0 –2 VCE = –3 V –10 Ta = 75° C 25 –25 –7 –6 –5 –4 –3 Collector Current IC (mA) –30 0 –3 –1.0 –0.3 –4 –6 –8 0 –10 DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 150 VCE = –3 V 75 50 100 25 0 Ta 50 = °C –25 0 –2 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) R07DS0429EJ0300 Rev.3.00 Jun 07, 2011 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC Current Transfer ratio hFE –4 Collector to Emitter Voltage VCE (V) Ambient Temperature Ta (°C) Collector Current IC (mA) –0.6 –60 0 150 W m 0 –0.7 0 200 –80 –0.9 –0.8 40 400 0 –1. = Collector Current IC (mA) 600 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve –500 240 200 VCE = –3 V 160 120 80 40 0 –5 –10 –20 –50 –100 –200 –500 Collector Current IC (mA) Page 3 of 4 2SA673, 2SA673A Preliminary Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A Previous Code TO-92(1) / TO-92(1)V RENESAS Code PRSS0003DA-A MASS[Typ.] 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA673BTZ-E 2SA673CTZ-E 2SA673DTZ-E 2SA673ABTZ-E 2SA673ACTZ-E 2SA673ADTZ-E Quantity Shipping Container Hold Box, Radial Taping 2500 Notes: 1. For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. 2. Leads is forming applied as following figure. Unit: mm 18.0 9.0 19.0 16.0 24.7 max. 12.7 2.5 2.5 6.35 12.7 R07DS0429EJ0300 Rev.3.00 Jun 07, 2011 4.0 Page 4 of 4 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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