LP821 - Polyfet

polyfet rf devices
LP821
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
10.0 Watts Single Ended
Package Style AP
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
3.40 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
5.0 A
Drain to
Source
Voltage
Gate to
Source
Voltage
36 V
36 V
20 V
10.0 WATTS OUTPUT )
MAX
12
55
Load Mismatch Tolerance
Drain to
Gate
Voltage
10:1
UNITS TEST CONDITIONS
dB
Idq = 0.40 A, Vds =
12.5 V, F = 500 MHz
%
Idq = 0.40 A, Vds =
12.5 V, F = 500 MHz
Relative
Idq = 0.40 A, Vds = 12.5 V, F =
500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 12.5 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
36
2
Ids =
0.10 mA, Vgs = 0V
Ids = 0.10 A, Vgs = Vds
1.0
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistance
0.60
Ohm
Vgs = 20V, Ids = 3.00 A
Idsat
Saturation Current
7.50
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
33.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
2.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
24.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
LP821
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
L2C 1DIE CAPACITANCE
LP821 POUT VS PIN F=500MHZ, IDQ=0.25, VDS=12.5V
14
20.00
12
18.00
100
Ciss
Pout
10
16.00
8
14.00
Coss
10
Crss
Gain
6
12.00
Efficiency = 60%
4
0
0.2
0.4
0.6
PIN IN WATTS
0.8
1
10.00
1.2
1
0
2
IV CURVE
4
6VDS IN VOLTS
8
10
12
14
ID & GM VS VGS
L2C 1 DIE IV
9
8
7
ID IN AMPS
6
5
4
3
2
1
0
0
2
vg=2v
4
Vg=4v 6
8
10
Vg=6v
VDS IN VOLTS vg=8v
12
vg=10v
14
vg=12v
16
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com