polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 3.40 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 5.0 A Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 10.0 WATTS OUTPUT ) MAX 12 55 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz % Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 36 2 Ids = 0.10 mA, Vgs = 0V Ids = 0.10 A, Vgs = Vds 1.0 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 0.60 Ohm Vgs = 20V, Ids = 3.00 A Idsat Saturation Current 7.50 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 33.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 24.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LP821 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L2C 1DIE CAPACITANCE LP821 POUT VS PIN F=500MHZ, IDQ=0.25, VDS=12.5V 14 20.00 12 18.00 100 Ciss Pout 10 16.00 8 14.00 Coss 10 Crss Gain 6 12.00 Efficiency = 60% 4 0 0.2 0.4 0.6 PIN IN WATTS 0.8 1 10.00 1.2 1 0 2 IV CURVE 4 6VDS IN VOLTS 8 10 12 14 ID & GM VS VGS L2C 1 DIE IV 9 8 7 ID IN AMPS 6 5 4 3 2 1 0 0 2 vg=2v 4 Vg=4v 6 8 10 Vg=6v VDS IN VOLTS vg=8v 12 vg=10v 14 vg=12v 16 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com