polyfet rf devices LP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.00 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 9.0 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 70.0 WATTS OUTPUT ) MAX 12 55 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 4.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 0.40 mA, Vgs = 0V Ids = 0.40 A, Vgs = Vds 3.2 Mho Vds = 10V, Vgs = 5V 0.45 Ohm Vgs = 20V, Ids =12.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 20.00 Amp Ciss Common Source Input Capacitance 120.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 3.2 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 60.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LP702 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L1B 2 DICE CAPACITANCE LP702 POUT VS PIN Freq= 500MHz, VDS=28V, Idq=.4A 18.00 80 1000 17.00 70 Coss 16.00 Pout 60 15.00 50 14.00 100 Ciss 13.00 40 Gain 12.00 Efficiency = 60% 30 10 Crss 11.00 20 10.00 10 1 9.00 0 1 2 3 4 5 PIN IN WATTS 6 7 8 0 9 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS L1B 2 DIE IV L1B 2 DIE ID & GM Vs VG 100.00 25 Id in amps; Gm in mhos Id 20 ID IN AMPS 10.00 15 10 gM 1.00 5 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com