polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Push - Pull Package Style AQ "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.80 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 4.5 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 30.0 WATTS OUTPUT ) MAX 12 55 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 28.0 V, F =1,000 MHz % Idq = 0.40 A, Vds = 28.0 V, F =1,000 MHz Relative Idq = 0.40 A, Vds = 28.0 V, F =1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 0.10 mA, Vgs = 0V Ids = 0.10 A, Vgs = Vds 0.8 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 0.90 Ohm Vgs = 20V, Ids = 2.50 A Idsat Saturation Current 5.50 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 1.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LQ801 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LQ801 POUT vs PIN F=1000 MHZ; IDQ=0.8A; VDS=28V L2B 1 DICE CAPACITANCE 100 35 16.00 Pout 25 14.00 20 Gain 15 12.00 Efficiency = 55% 10 5 Coss CAPACITANCE IN PFS 30 10 Ciss Crss 10.00 0 0.5 1 1.5 PIN IN WATTS 2 2.5 1 3 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VDS IN VOLTS IV CURVE ID & GM VS VGS L2B 1 DIE ID & GM Vs VG L2B 1 DIE IV 10.00 Id in amps; Gm in mhos 6 5 ID IN AMPS 4 Id 1.00 3 2 1 gM 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com