polyfet rf devices LY942 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 600.0 Watts Push - Pull Package Style AY "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 1,000 Watts Maximum Junction Temperature o 0.18 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 24.0 A Drain to Gate Voltage Drain to Source Voltage 110 V 110 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 600.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 19 70 Load Mismatch Tolerance 13:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 50.0 V, F = 80 MHz % Idq = 0.80 A, Vds = 50.0 V, F = 80 MHz Idq = 0.80 A, Vds = 50.0 V, F = 80 MHz Relative ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 50.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 110 2 Ids = 100.00 mA, Vgs = 0V Ids = 0.60 A, Vgs = Vds 7.0 Mho Vds = 10V, Vgs = 5V 0.20 Ohm Vgs = 20V, Ids =12.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 48.00 Amp Ciss Common Source Input Capacitance 240.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 7.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 230.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 11/09/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LY942 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LY942 C W: Pout/Gain vs Pin, Freq=80Mhz ; Vds=50Vdc, Idq=.8A 21 600 Coss 21 Pout 500 400 20 Gain 300 19 Efficiency 73% at 600W 200 Gain in dB 20 CAPACITANCE IN PFS 700 Pout in Watts L9 2Die Capacitance 1000 100 Ciss 10 Crss 19 100 0 1 18 0 2 4 6 P in in W a tts 8 0 10 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS IV CURVE ID & GM VS VGS L 9 2 D ie IV C U R V E L 9 2 D ie ID & G M 100.00 50 45 Id Id in amps; Gm in mhos 40 ID IN AMPS 35 30 25 20 15 10 10.00 gM 1.00 0.10 5 0 0 2 vg = 2 v 4 V g =4 v 6 8 10 12 V D S IN V O L T S V g=6v vg = 8 v 14 16 18 20 0.01 0 vg = 1 0 v 2 vg = 1 2 v 4 6 8 10 12 V g s in V o lts Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 11/09/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com