polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style LR "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.75 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 13.5 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 130.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 14 55 Load Mismatch Tolerance 10:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 65 2 Ids = 25.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 2.7 Mho Vds = 10V, Vgs = 5V 0.28 Ohm Vgs = 20V, Ids = 8.00 A 17.00 Amp Vgs = 20V, Vds = 10V 80.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz 4.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz 50.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LR401 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LR 40 1 Pin vs Pout F req=5 00Mhz; V ds=28 Vdc, I dq=.8A L4 1 DIE CAPACITANCE 1000 18 180 160 Coss 17 140 100 120 16 Pout 100 Ciss 15 80 Gain 60 40 10 14 Efficiency @130W = 60% 13 20 0 Crss 12 0 1 2 3 4 5 6 P in in W a tts 7 8 9 1 10 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 VDS IN VOLTS IV CURVE ID & GM VS VGS L4B 1 DIE IV L4B 1 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 18 16 ID IN AMPS 14 12 10 8 6 4 Id 10.00 1.00 gM 2 0.10 0 0 2 vg=2v 4 Vg=4v 6 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 12 Vgs in Volts 14 16 18 20 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com