polyfet rf devices ST724 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Single Ended Package Style AT "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 190 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.85 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 19.0 A Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 60.0 WATTS OUTPUT ) MAX 10 75 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz % Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 4.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 36 2 Ids = 80.00 mA, Vgs = 0V Ids = 0.40 A, Vgs = Vds 5.2 Mho Vds = 10V, Vgs = 5V 0.20 Ohm Vgs = 20V, Ids =10.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 38.00 Amp Ciss Common Source Input Capacitance 180.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 14.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 220.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com ST724 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ST724 POUT VS PIN Freq=175MHz, VDS=12.5V, Idq=.8A 80 14.00 S1C 4 DIE CAPACITANCE 1000 70 13.00 Coss 60 Pout 12.00 50 Ciss 40 100 11.00 Gain 30 Crss 10.00 Efficiency = 75% 20 9.00 10 0 10 8.00 0 2 4 6 PIN IN WAT T S 8 0 10 2.5 5 10 12.5 15 17.5 20 VD S I N VOLTS IV CURVE ID & GM VS VGS S1C 4 DIE ID & GM Vs VG S1C 4 DIE IV 100.00 Id in amps; Gm in mhos 50 45 40 Id 10.00 35 ID IN AMPS 7.5 30 25 20 15 10 5 gM 1.00 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 vg=12v 0 2 Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com