polyfet rf devices SA702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 50.0 Watts Single Ended Package Style AA "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.40 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 6.5 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 50.0 WATTS OUTPUT ) MAX 13 85 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 28.0 V, F = 175 MHz % Idq = 0.40 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 0.40 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 40.00 mA, Vgs = 0V Ids = 0.20 A, Vgs = Vds 2.4 Mho Vds = 10V, Vgs = 5V 0.50 Ohm Vgs = 20V, Ids = 5.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 14.00 Amp Ciss Common Source Input Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 6.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 64.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SA702 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S1A 2 DICE CAPACITANCE S A7 0 2 Pin vs Pout F re q=1 7 5 M H z, V D S =2 8 V , I dq=.4 A 1000 17.00 60 16.00 Coss CAPACITANCE IN PFS 70 100 50 15.00 Pout 40 14.00 30 Gain 13.00 20 Efficiency@50W = 85% Ciss 10 Crss 12.00 10 0 1 11.00 0 0.5 1 1.5 2 2.5 3 P in in W a tts 3.5 4 4.5 0 5 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S1A 2 DIE IV S1A 2 DIE ID & GM Vs VG 100.00 16 Id in amps; Gm in mhos 14 12 Id ID IN AMPS 10.00 10 8 6 4 1.00 gM 2 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com