polyfet rf devices SM705 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AM "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.75 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 13.5 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 150.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 13 70 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 5.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 100.00 mA, Vgs = 0V Ids = 0.50 A, Vgs = Vds 6.0 Mho Vds = 10V, Vgs = 5V 0.20 Ohm Vgs = 20V, Ids =12.50 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 35.00 Amp Ciss Common Source Input Capacitance 250.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 160.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SM705 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SM705 Pin vs Pout Freq=150MHz, VDS=28V, Idq=1A S1A 5 DICE CAPACITANCE 1000 200 Coss 18 CAPACITANCE IN PFS 17 160 16 Pout 100 15 120 14 13 80 Gain 12 11 40 Efficiency@165W = 70% 4 6 8 10 Crss 1 9 2 10 10 0 0 Ciss 12 14 16 18 0 20 4 8 12 16 20 24 28 VDS IN VOLTS P in in W a tts IV CURVE ID & GM VS VGS S1A 5 DIE ID & GM Vs VG S1A 5 DIE IV 100.00 40 Id Id in amps; Gm in mhos 35 30 ID IN AMPS 10.00 25 20 15 10 1.00 gM 5 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 vg=12v 0 2 Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com