polyfet rf devices SX501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 350.0 Watts Push - Pull Package Style AX "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 475 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.34 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 28.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 350.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 16 55 Load Mismatch Tolerance 10:1 UNITS TEST CONDITIONS dB Idq = 1.20 A, Vds = 28.0 V, F = 175 MHz % Idq = 1.20 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 1.20 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forward Transconductance Rdson Saturation Resistance Idsat MIN TYP MAX TEST CONDITIONS V Ids = 120.00 mA, Vgs = 0V 7.0 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0V Vgs = 30V 5 V Ids = 0.60 A, Vgs = Vds 65 2 UNITS 9.0 Mho Vds = 10V, Vgs = 5V 0.12 Ohm Vgs = 20V, Ids =17.50 A Saturation Current 47.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 250.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 230.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/24/2006 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SX501 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SX501 Pout/Gain vs Pin Freq=175Mhz; Vds=28Vdc, Idq=1.6A 500 S5 1 DIE CAPACITANCE 24 1000 23 450 22 Coss 400 21 Pout 350 20 19 300 Efficiency @350W = 60% Ciss 18 100 250 17 200 16 Gain 15 150 Crss 14 100 13 50 10 12 0 0 11 0 5 10 15 Pin in Watts 20 25 5 10 30 IV CURVE 15 VDS IN VOLTS 20 25 30 ID & GM VS VGS S5 IV CURVE S5A ID & GM VS VG 100.00 60 Id in amps; Gm in mhos 50 10.00 ID IN AMPS 40 30 g 1.00 20 10 0 0 2 4 vg=2v 6 Vg=4v 8 10 VDS IN VOLTS Vg=6v 12 vg=8v 14 vg=10v 16 18 20 0.10 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/24/2006 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com