SP221 - Polyfet

polyfet rf devices
SP221
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
2.0 Watts Single Ended
Package Style AP
TM
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
"Polyfet" process features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
20 Watts
o
10.00 C/W
Maximum
Junction
Temperature
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
TYP
0.8 A
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 V
50 V
20 V
2.0 WATTS OUTPUT )
MAX
10
50
20:1
UNITS TEST CONDITIONS
dB
Idq = 0.20
A, Vds = 12.5 V, F =
850 MHz
%
Idq = 0.20
A, Vds = 12.5 V, F =
850 MHz
Relative
Idq = 0.20
A, Vds = 12.5 V, F =
850 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
0.2
mA
Igss
Gate Leakage Current
1
uA
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
40
2
Ids = 10.00 mA, Vgs = 0V
Vds = 12.5 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.02 A, Vgs = Vds
0.3
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistance
2.00
Ohm
Vgs = 20V, Ids = 1.60 A
Idsat
Saturation Current
2.30
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
9.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
0.5
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
8.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 06/04/2008
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
SP221
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
SP221 Pin vs Pout Freq=850Mhz; Vds=12.5Vdc,
Idq=.2A
S2C 1 DIE CAPACITANCE
1000
3
15
14
2.5
Pout
100
13
2
Coss
12
10
1.5
11
Ciss
10
1
Gain
9
Efficiency @ 2W = 45%
0.5
1
Crss
8
0
0
0.1
0.2
0.3
Pin in Watts
7
0.5
0.4
0.1
0
4
8
IV CURVE
16
20
24
28
ID & GM VS VGS
S2C Die 1 IV CURVE
S2C Die 1 ID & GM vs VG
10.00
2
I
Id in amps; Gm in mhos
1.8
1.6
1.00
1.4
ID IN AMPS
12
VDS IN VOLTS
1.2
1
0.8
0.10
0.6
0.4
0.2
0.01
0
0
2
4
vg=2v
6
Vg=4v
8
10
12
VDS IN VOLTS
Vg=6v
vg=8v
14
vg=10v
16
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
Vgs in Volts
12
14
16
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 06/04/2008
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com