polyfet rf devices S8221 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.0 Watts Single Ended Package Style SO8 "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 20 Watts o 10.00 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 0.8 A Drain to Source Voltage Gate to Source Voltage 50 V 50 V 20 V 2.0 WATTS OUTPUT ) MAX 10 50 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.20 A, Vds = 12.5 V, F = 850 MHz % Idq = 0.20 A, Vds = 12.5 V, F = 850 MHz Relative Idq = 0.20 A, Vds = 12.5 V, F = 850 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 0.2 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 40 2 Ids = 10.00 mA, Vgs = 0V Ids = 0.02 A, Vgs = Vds 0.3 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 2.00 Ohm Vgs = 20V, Ids = 1.60 A Idsat Saturation Current 2.30 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 9.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 0.5 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 8.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 06/04/2008 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com S8221 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S 8 2 2 1 F re q= 8 5 0 M hz ; V ds= 1 2 .5 V dc, I dq= .4 A 4 S2C 1 DIE CAPACITANCE 1000 14 13 3 100 12 Coss Pout 11 2 10 10 9 Gain 1 Ciss 1 8 Crss Efficiency = 55% 7 0 6 0 0.1 0.2 0.3 0.4 0.5 P in in W a tts 0.6 0.7 0.1 0 0.8 4 8 IV CURVE 16 20 24 28 ID & GM VS VGS S2C Die 1 IV CURVE S2C Die 1 ID & GM vs VG 10.00 2 I Id in amps; Gm in mhos 1.8 1.6 1.00 1.4 ID IN AMPS 12 VDS IN VOLTS 1.2 1 0.8 0.10 0.6 0.4 0.2 0.01 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 vg=10v 16 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 06/04/2008 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com