polyfet rf devices LB2401 General Description This device is part of Polyfet's latest family of 28VDC LDMOS devices. Being an unmatched device and having low capacitances makes it ideal for broad band applications such as communications and broadcast. It is also suitable for various narrow band applications. Employing back-to-back gate diodes for enhanced ESD protection and having a high drain breakdown voltage makes this device highly rugged. The suitable frequency range of this device is 1-1100MHz SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 125.0 Watts Push - Pull Package Style LB HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 380 Watts Maximum Junction Temperature o 0.48 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C Drain to Gate Voltage 18.0 A Drain to Source Voltage 80 V 80 V Gate to Source Voltage + 11 V - 9V RF CHARACTERISTICS ( 125.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain Drain Efficiency VSWR TYP MAX 16 60 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F =1,000 MHz % Idq = 0.80 A, Vds = 28.0 V, F =1,000 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F =1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 10V Vgs Gate Bias for Drain Current 5 V Ids = 0.20 A, Vgs = Vds gM Forward Transconductance 70 2 Ids = 5.00 mA, Vgs = 0V 7.0 Mho Vds = 10V, Vgs = 5V 0.20 Ohm Vgs = 20 V, Ids = 10.00 A Vgs = 20 V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 24.00 Amp Ciss Common Source Input Capacitance 110.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 1.8 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 40.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 11/21/2014 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LB2401 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE IV CURVE ID & GM VS VGS PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 11/21/2014 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com