polyfet rf devices LK822 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 40.0 Watts Push - Pull Package Style AK "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 140 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.10 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 14.0 A Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 40.0 WATTS OUTPUT ) MAX 12 55 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 1.60 A, Vds = 12.5 V, F = 400 MHz % Idq = 1.60 A, Vds = 12.5 V, F = 400 MHz Relative Idq = 1.60 A, Vds = 12.5 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 36 2 Ids = 0.20 mA, Vgs = 0V Ids = 0.20 A, Vgs = Vds 2.0 Mho Vds = 10V, Vgs = 5V 0.40 Ohm Vgs = 20V, Ids = 6.00 A 15.00 Amp Vgs = 20V, Vds = 10V 66.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz 4.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz 48.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LK822 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LK822 POUT VS PIN F=400MHZ, IDQ=1.6A, VDS=12.5V 50 L2C 2 DIE CAPACITANCE 1000 22.00 21.00 45 20.00 19.00 18.00 40 35 Pout 17.00 16.00 15.00 30 Gain 25 20 14.00 13.00 12.00 Efficiency = 60% 15 10 0.5 1 PIN IN WATTS 1.5 Coss Crss 10 11.00 10.00 2.5 5 0 Ciss 100 2 1 0 2 4 IV CURVE 6 8 VDS IN VOLTS 10 12 14 ID & GM VS VGS L2C 2 DIE ID, GM vs VG L2C 2 DIE IV 100 16 14 12 ID 10 ID IN AMPS 10 8 6 1 4 GM 2 0 0 2 vg=2v 4 Vg=4v 6 8 10 VDSINVOLTSvg=8v Vg=6v 12 0 14 vg=12v 16 0.1 0 2 Zin Zout 4 6 in Volts 8 Vgs 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com