Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package Optimal for differential amplification due to excellent thermal equilibrium and pair capability Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Ratings Unit 20 V 10 V VEBO IC 1.5 V 30 mA When mounted on ceramic substrate (250mm2×0.8mm) 1unit 150 mW When mounted on ceramic substrate (250mm2×0.8mm) 300 mW 150 °C --55 to +150 °C Junction Temperature PC PT Tj Storage Temperature Tstg Total Power Dissipation Conditions VCBO VCEO Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7026A-005 • Package : MCP6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.1 0.425 0.2 0.9 5 0.2 6 FH105A-TR-E 0.15 2.0 4 Packing Type : TR 0 to 0.08 1.25 0.425 Package Dimensions LOT No. 1 1 2 0.65 3 0.3 1 : Collector1 2 : Base2 3 : Collector2 4 : Emitter2 5 : Emitter1 6 : Base1 Marking TR 105 1 LOT No. Electrical Connection B1 E1 E2 Tr1 MCP6 Tr2 C1 Semiconductor Components Industries, LLC, 2013 August, 2013 B2 C2 82912 TKIM/O2908AB MSIM TC-00001689 No. A1126-1/8 FH105A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A DC Current Gain Ratio hFE hFE(small/large) VCE=5V, IC=10mA VCE=5V, IC=10mA Base-to-Emitter Voltage Diffrence VBE(large-small) VCE=5V, IC=10mA Gain-Bandwidth Product VCE=5V, IC=10mA 5 Output Capacitance fT Cob Forward Transfer Gain ⏐S21e⏐ VCB=10V, f=1MHz VCE=5V, IC=10mA, f=1.5GHz 8 Noise Figure NF Emitter Cutoff Current DC Current Gain 2 Unit max 90 1.0 μA 10 μA 200 0.7 0.95 1.0 mV 8 GHz 0.45 0.7 pF 10 VCE=5V, IC=5mA, f=1.5GHz dB 1.4 3.0 dB Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Ordering Information Device Package Shipping memo MCP6 3,000pcs./reel Pb Free FH105A-TR-E hFE -- IC 5 Gain-Bandwidth Product, f T -- GHz 3 DC Current Gain, hFE 2 100 7 5 3 2 10 f T -- IC 2 VCE=5V 10 =5V VCE =1V VCE 7 5 3 2 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 IT00322 1.0 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 IT14098 No. A1126-2/8 FH105A Cob -- VCB 5 Cre -- VCB 5 f=1MHz Reverse Transfer Capacitance, Cre -- pF f=1MHz Output Capacitance, Cob -- pF 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 5 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V IT00324 NF -- IC 12 3 VCE=2V f=1GHz 10 Noise Figure, NF -- dB 10 8 6 2 0 0.1 2 3 5 7 2 1.0 3 5 7 10 8 6 4 2 2 Collector Current, IC -- mA 3 0 0.1 5 2 3 5 7 1.0 2 3 5 7 10 2 f=1GHz 2 0 5V 4 10 V 6 5V 2V =1V V CE 8 12 2V 10 14 =1 V CE 2 Forward Transfer Gain, ⏐S21e⏐ -- dB f=1.5GHz 12 5 IT00327 ⏐S21e⏐2 -- IC 16 14 3 Collector Current, IC -- mA IT00326 ⏐S21e⏐2 -- IC 16 5V V 4 V CE=1 Noise Figure, NF -- dB 5 NF -- IC 12 f=1.5GHz 2 Forward Transfer Gain, ⏐S21e⏐ -- dB 3 IT00325 8 6 4 2 0 3 5 7 2 1.0 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT00328 PC -- Ta 350 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT00329 Collector Dissipation, PC -- mW When mounted on ceramic substrate (250mm2✕0.8mm) 300 250 To t 200 al di 150 ss ip ati on 1u nit 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00330 No. A1126-3/8 FH105A S Parameter S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) 90° j50 j25 j100 j150 j200 j250 j10 0 --j10 60° 120° 25 2.0GHz 250 150 50 100 2.0GHz VCE=5V 2.0GHz IC=10mAV =5V CE IC=5mA 0.2GHz 0.2GHz 2.0GHz --j250 0.2GHz 0.2GHz --j200 --j150 VCE=1V VCE=2V IC=1mA --j100 --j25 IC=3mA 10 VCE=5V IC=10mA 150° 0.2GHz VCE=5V IC=5mA 2.0GHz 0.2GHz 2.0GHz VCE=2V 2.0GHz 0.2GHz I =3mA V =1V 4 8 CE ±180° C 2.0GHz IC=1mA 0.2GHz --90° j50 60° 2.0GHz 2.0GHz VCE=5V 2.0GHz IC=5mA VCE=5V 2.0GHz IC=10mA 30° VCE=2V VCE=1V 0.2GHz IC=3mA IC=1mA 0.2GHz 0.2GHz 0.2GHz 0.04 0.08 0.12 0.16 0.2 0 j25 j200 j250 j10 0 10 --30° --150° --j25 --60° IT00333 j100 j150 --j10 --90° IT00332 S22e f=200MHz to 2000MHz(200MHz Step) 90° --120° 0 --60° --120° S12e f=200MHz to 2000MHz(200MHz Step) ±180° 16 20 --30° IT00331 150° 12 --150° --j50 120° 30° 25 50 150 100 V =5V CE 250 IC=10mA 0.2GHz 0.2GHz 0.2GHz 2.0GHz 0.2GHz 2.0GHz 2.0GHz --j250 --j200 2.0GHz VCE=1V --j150 VCE=5V IC=1mA IC=5mA VCE=2V --j100 IC=3mA --j50 IT00334 No. A1126-4/8 FH105A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.763 0.590 0.456 0.374 0.323 0.288 0.264 0.248 0.239 0.235 ∠S11 -37.5 -65.4 -85.5 -102.0 -115.0 -127.5 -137.7 -147.4 -156.9 -165.7 ⏐S21⏐ 11.926 9.202 7.173 5.743 4.785 4.105 3.599 3.213 2.905 2.651 ∠S21 146.9 124.3 109.4 98.7 90.5 83.6 77.5 71.3 66.4 61.3 ⏐S12⏐ 0.036 0.058 0.073 0.086 0.098 0.110 0.123 0.136 0.150 0.165 ∠S12 70.7 60.9 57.4 56.7 56.7 57.2 57.7 57.6 57.6 57.2 ⏐S22⏐ 0.892 0.740 0.631 0.566 0.528 0.505 0.488 0.476 0.466 0.462 ∠S22 -19.1 -29.1 -33.7 -35.8 -37.2 -38.4 -39.6 -41.2 -43.3 -45.4 ∠S11 -52.6 -84.6 -106.3 -124.6 -136.5 -148.9 -158.3 -167.3 -175.6 -177.5 ⏐S21⏐ 16.354 11.011 8.026 6.250 5.115 4.336 3.813 3.365 3.030 2.754 ∠S21 136.2 113.3 100.5 91.3 84.7 78.8 73.4 68.1 63.5 58.9 ⏐S12⏐ 0.031 0.048 0.062 0.076 0.090 0.104 0.119 0.135 0.150 0.166 ∠S12 67.5 62.4 62.2 63.4 64.3 64.4 64.5 63.8 63.1 62.5 ⏐S22⏐ 0.804 0.622 0.533 0.491 0.469 0.458 0.449 0.443 0.436 0.438 ∠S22 -23.9 -30.5 -32.0 -32.4 -33.2 -34.6 -35.8 -37.7 -39.6 -41.9 ∠S11 -30.7 -56.3 -76.1 -93.1 -106.3 -119.6 -130.2 -140.5 -150.0 -160.0 ⏐S21⏐ 8.491 7.161 5.879 4.882 4.154 3.597 3.212 2.875 2.604 2.383 ∠S21 153.0 131.9 116.3 104.2 95.0 87.1 80.2 73.4 67.7 62.1 ⏐S12⏐ 0.044 0.075 0.095 0.109 0.121 0.132 0.143 0.154 0.166 0.179 ∠S12 72.5 60.9 54.1 51.0 49.3 48.7 48.6 48.7 48.6 48.9 ⏐S22⏐ 0.931 0.808 0.696 0.615 0.564 0.526 0.496 0.475 0.461 0.451 ∠S22 -17.1 -28.8 -36.2 -40.6 -43.5 -45.8 -47.5 -49.6 -51.6 -52.9 ∠S11 -18.9 -37.3 -53.6 -69.4 -82.5 -95.8 -106.1 -117.2 -127.5 -137.9 ⏐S21⏐ 3.296 3.206 2.942 2.711 2.449 2.252 2.061 1.909 1.766 1.658 ∠S21 162.5 145.9 131.2 117.8 107.0 96.9 88.1 79.5 72.2 65.2 ⏐S12⏐ 0.054 0.102 0.139 0.166 0.187 0.199 0.207 0.212 0.215 0.217 ∠S12 77.2 65.9 56.3 48.6 42.5 37.3 33.5 30.6 28.6 27.6 ⏐S22⏐ 0.980 0.934 0.870 0.811 0.763 0.715 0.673 0.638 0.611 0.592 ∠S22 -11.0 -20.5 -29.0 -35.5 -40.9 -45.7 -49.4 -53.4 -56.5 -59.9 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.605 0.417 0.319 0.266 0.238 0.225 0.215 0.213 0.212 0.216 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.842 0.704 0.579 0.480 0.417 0.376 0.343 0.319 0.303 0.298 VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.945 0.884 0.810 0.728 0.667 0.605 0.561 0.518 0.492 0.465 No. A1126-5/8 FH105A Embossed Taping Specification FH105A-TR-E No. A1126-6/8 FH105A Outline Drawing FH105A-TR-E Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 1.9 0.8 0.4 0.65 0.65 No. A1126-7/8 FH105A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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