2SK715 - ON Semiconductor

2SK715
N-Channel JFET
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15V, 7.3 to 24mA, 50mS
Applications
• AM Tuner RF Amp, Low-noise Amp
• HF Low-noise Amp
Features
•
•
Electrical Connection
Adoption of FBET Process
Large yfs
Small Ciss
Very Low Noise Figure
2
Marking
K715
1 : Source
2 : Gate
3 : Drain
Rank
•
•
LOT No.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
1
Symbol
Gate-to-Drain Voltage
Drain-to-Source Voltage
VDSS
VGDS
Gate Current
Drain Current
Ratings
15
V
--15
V
IG
10
mA
50
mA
300
mW
Junction Temperature
ID
PD
Tj
125
°C
Storage Temperature
Tstg
--55 to +125
°C
Allowable Power Dissipation
3
Unit
2SK715U-AC
2SK715V-AC
2SK715W-AC
TO-92-3 / SPA-WA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Conditions
Gate-to-Source Leakage Current
V(BR)GDS
IGSS
Zero-Gate Voltage Drain Current
IDSS*
IG=--10mA, VDS=0V
VGS=--10V, VDS=0V
VDS=5V, VGS=0V
Cutoff Voltage
VGS(off)
VDS=5V, ID=100mA
Forward Transfer Admittance
| yfs |
VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
VDS=5V, VGS=0V, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
Ratings
min
typ
max
--15
V
7.3*
--0.6
25
Unit
50
--1.0
nA
24.0*
mA
--1.4
V
mS
10
pF
3.0
pF
1.5
dB
* : The 2SK715 is classified by IDSS as follows : (unit : mA)
Rank
IDSS
U
7.3 to 12.0
V
10.0 to 17.0
W
14.5 to 24.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
1
Publication Order Number :
2SK715/D
2SK715
ID -- VDS
16
ID -- VDS
16
--0.1V
8
--0.2V
4
--0.3V
0.4
0.8
1.2
1.6
ID -- VGS
--0.8
--0.6
--0.4
2
7
2
10
3
DrainCurrent,IDSS -- mA
Ciss -- VDS
3
3
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
5
7
2
2
10
3
VDS=5V
f=1kHz
100
7
A
m
A 20
5
m
=10
I DSS
3
2
10
7
7
1.0
2
3
7
2
10
3
Crss -- VDS
5
7
HD00874
VGS=0V
f=1MHz
7
5
3
2
HD00875
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2
5
DrainCurrent,ID -- mA
10
1.0
3
5
HD00872
| yfs | -- ID
2
5
1.0
3
5
7
7
5
5
10
2
7
HD00873
VGS=0V
f=1MHz
2
VDS=5V
ID=100mA
2
3
5
10
HD00870
DrainCurrent,IDSS -- mA
5
3
8
--1.0
--0.1
0
VDS=5V
VGS=0V
f=1kHz
7
6
VGS(off) -- IDSS
HD00871
| yfs | -- IDSS
100
Forward Transfer Admittance, | yfs | -- mS
Cutoff Voltage, VGS(off) -- V
A
m
10
--0.2
4
2
Forward Transfer Admittance, | yfs | -- mS
DrainCurrent,ID -- mA
=
S
--1.0
2
Gate-to-Source Voltage, VGS -- V
A
Gate-to-Source Voltage, VGS -- V
InputCapacitance,Ciss -- pF
0
m
20
0
--1.2
--0.5V
--0.6V
0
20
I DS
--0.4V
4
VDS=5V
10
--0.3V
HD00869
30
10
8
2.0
Drain-to-Source Voltage, VDS -- V
40
--0.2V
--0.4V
--0.5V
0
0
--0.1V
12
DrainCurrent,ID -- mA
V GS=0V
12
Reverse Transfer Capacitance, Crss -- pF
DrainCurrent,ID -- mA
V
=0
S
VG
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
HD00876
2SK715
NF -- f
14
10
8
6
4
Rg=500Ω
2
10kΩ
0
10
2
5 100 2
5
5 10k 2
Frequency, f -- Hz
5 100k 2
PD -- Ta
350
AllowablePowerDissipation,PD -- mW
1k 2
150
100
50
40
60
80
100
AmbientTemperature, Ta -- °C
6
4
0
10 2
5 1M 2
HD00877
200
20
8
ID=1mA
2
250
0
10
1kΩ
300
0
VDS=5V
Rg=1kΩ
12
Noise Figure, NF -- dB
Noise Figure, NF -- dB
12
NF -- f
14
VDS=5V
ID=10mA
120
140
ITR00879
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3
5 100 2
5 1k 2
5 10k 2
Frequency, f -- Hz
3mA 10mA
5 100k 2
5 1M 2
ITR00878
2SK715
Package Dimensions
unit : mm
2SK715U-AC, 2SK715V-AC, 2SK715W-AC
TO-92 3 3.0x4.0 / SPA-WA
CASE 135AK
ISSUE O
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4
2SK715
ORDERING INFORMATION
Device
Package
Shipping
memo
TO-92-3 / SPA-W
2,500pcs. / Tape and Reel
Pb-Free
2SK715U-AC
2SK715V-AC
2SK715W-AC
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and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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copyright laws and is not for resale in any manner.
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