2SK545-11D-TB-E - ON Semiconductor

Ordering number : EN1789C
2SK545
N-Channel JFET
http://onsemi.com
40V, 55 to 95μA, 0.10mS, CP
Applications
•
•
Impedance converter applications
Infrared sensor
Features
•
•
•
Small IGSS
Small Ciss
Ultrasmall package permitting 2SK545-applied sets to be compact
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
VDSS
VGDS
Gate Current
Drain Current
Conditions
Ratings
Unit
40
V
--40
V
IG
10
mA
ID
PD
1
mA
Allowable Power Dissipation
100
mW
Junction Temperature
Tj
Storage Temperature
Tstg
125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7013A-011
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
1.5
0.5
0.3
1.1
2SK545-11D-TB-E
1
0.95
2
Marking
B11
LOT No.
0.05
0.1
3
LOT No.
2.5
0.5
2.9
TB
0.4
1 : Source
2 : Drain
3 : Gate
Electrical Connection
3
CP
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
O3112 TKIM TC-00002836/42099TH (KT)/O2196TS (KOTO) 8-7809/6037KI/3105KI, MT No.1789-1/6
2SK545
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
IDSS
ID=--10μA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, VGS=0V
VDS=10V, ID=1μA
Forward Transfer Admittance
VGS(off)
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Gate Cutoff Current
Drain Current
Cutoff Voltage
Ratings
Conditions
min
typ
Unit
max
--40
V
--500
pA
95
μA
55
--1.2
VDS=10V, VGS=0V, f=1kHz
0.05
VDS=10V, VGS=0V, f=1MHz
--4.0
V
0.10
mS
1.7
pF
0.7
pF
Ordering Information
Package
Shipping
memo
CP
3,000pcs./reel
Pb Free
ID -- VDS
100
VGS=0V
50
--0.4V
40
30
--0.6V
20
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
VDS=10V
ID=1μA
1.4
1.3
1.2
1.1
1.0
0.9
50
60
70
80
Drain Current, IDSS -- μA
90
100
IT16958
--2
5
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
IT16956
VGS(off) -- IDSS
1.5
30
0
--1.6
20
0
IT16957
⏐yfs⏐ -- IDSS
0.14
Forward Transfer Admittance, ⏐yfs⏐ -- mS
2
40
10
--1.2V
--1.0V
0
0
50
20
--0.8V
10
60
25
°C
--0.2V
60
70
Ta
=
70
°C
80
Drain Current, ID -- μA
80
Drain Current, ID -- μA
VDS=10V
IDSS=75μA
90
90
Cutoff Voltage, VGS(off) -- V
ID -- VGS
100
75
°C
Device
2SK545-11D-TB-E
VDS=10V
VGS=0V
f=1kHz
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
50
60
70
80
Drain Current, IDSS -- μA
90
100
IT16959
No.1789-2/6
2SK545
PD -- Ta
120
Ciss -- VDS
10
VGS=0
f=1MHz
100
Input Capacitance, Ciss -- pF
Power Dissipation, PD -- mW
7
80
60
40
20
0
3
2
1.0
7
5
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
ITR00844
3
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7 100
ITR00845
Crss -- VDS
5
Reverse Transfer Capacitance, Crss -- pF
5
VGS=0
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7 100
ITR00846
No.1789-3/6
2SK545
Embossed Taping Specification
2SK545-11D-TB-E
No.1789-4/6
2SK545
Outline Drawing
2SK545-11D-TB-E
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.0
0.8
0.95
0.95
No.1789-5/6
2SK545
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PS No.1789-6/6