CPH3910-TL-E - ON Semiconductor

Ordering number : ENA1965A
CPH3910
N-Channel JFET
http://onsemi.com
25V, 20 to 40mA, 40mS, CPH3
Applications
•
•
For AM tuner RF amplification
Low noise amplifier
Features
•
•
•
•
VGDS: --25V max.
| yfs |: 40mS typ.
Ciss: 6.0pF typ.
NF: 2.1dB typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
VDSX
VGDS
Gate Current
Drain Current
Allowable Power Dissipation
Conditions
Ratings
Unit
25
V
--25
V
IG
10
mA
ID
PD
50
mA
400
mW
150
°C
--55 to +150
°C
Junction Temperature
Tj
Storage Temperature
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7015A-007
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
CPH3910-TL-E
0.6
2.9
0.15
Packing Type: TL
LOT No.
J2
0.2
0.05
1.6
2.8
Marking
3
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Source
2 : Drain
3 : Gate
Electrical Connection
3
CPH3
1
Semiconductor Components Industries, LLC, 2013
August, 2013
2
61312 TKIM/21512AC TKIM TC-00002694 No. A1965-1/6
CPH3910
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate Cutoff Current
Cutoff Voltage
Drain Current
Ratings
Conditions
min
typ
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
--25
VDS=5V, ID=100μA
--0.6
Unit
max
V
--1.0
--1.2
nA
--1.8
V
VDS=5V, VGS=0V
20
Forward Transfer Admittance
IDSS
| yfs |
40
mA
VDS=5V, VGS=0V, f=1kHz
30
40
mS
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
6.0
pF
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
2.3
Noise Figure
NF
VDS=5V, VGS=0V, f=100MHz
2.1
pF
2.8
dB
Ordering Information
Device
Package
Shipping
memo
CPH3
3,000pcs./reel
Pb Free
CPH3910-TL-E
ID -- VDS
30
20
--0.2V
15
--0.4V
10
--0.6V
Drain Current, ID -- mA
--0.2V
25
20
--0.4V
15
--0.6V
10
--0.8V
5
5
--0.8V
--1.0V
0
0
0.5
1.0
1.5
0
50
VDS=5V
45
40
4
6
8
10
IT16688
ID -- VGS
VDS=5V
15
A
20
m
20
30
ID
SS =
4
25
mA
25
20
5
5
--0.5
0
Gate-to-Source Voltage, VGS -- V
0.5
IT16689
25
°C
15
10
--1.0
--25
°C
30
10
--1.5
Ta=
0m
A
30
35
°C
Drain Current, ID -- mA
40
35
0
--2.0
2
Drain-to-Source Voltage, VDS -- V
IT16687
ID -- VGS
50
--1.0V
0
2.0
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
VGS=0V
30
75
Drain Current, ID -- mA
35
V
V GS=0
25
45
ID -- VDS
40
0
--2.0
--1.5
--1.0
--0.5
0
Gate-to-Source Voltage, VGS -- V
0.5
IT16690
No. A1965-2/6
CPH3910
| yfs | -- ID
5
Forward Transfer Admittance, | yfs | -- mS
7
3
2
10
7
5
3
2
1.0
1.0
2
3
5
7
10
2
5
3
Drain Current, ID -- mA
3
2
1.0
7
5
3
3
2
2
3
5
7
Drain Current, IDSS -- mA
Ciss -- VDS
10
100
IT16692
VGS=0V
f=1MHz
7
5
3
2
2
0.1
2
10
3
5
7
Drain Current, IDSS -- mA
VGS=0V
f=1MHz
5
3
2
2
3
5
7
10
2
2
3
3
Drain-to-Source Voltage, VDS -- V
5
7
100
IT16695
5
7
2
10
3
Drain-to-Source Voltage, VDS -- V
PD -- Ta
450
7
1.0
1.0
1.0
1.0
100
IT16693
Crss -- VDS
10
Reverse Transfer Capacitance, Crss -- pF
5
10
Input Capacitance, Ciss -- pF
Cutoff Voltage, VGS(off) -- V
5
7
100
IT16691
VDS=5V
ID=100μA
7
VDS=5V
VGS=0V
f=1kHz
10
7
VGS(off) -- IDSS
10
| yfs | -- IDSS
100
VDS=5V
f=1kHz
IDSS=30mA
Allowable Power Dissipation, PD -- mW
Forward Transfer Admittance, | yfs | -- mS
100
5
7 100
IT16694
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16696
No. A1965-3/6
CPH3910
Embossed Taping Specification
CPH3910-TL-E
No. A1965-4/6
CPH3910
Outline Drawing
CPH3910-TL-E
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1965-5/6
CPH3910
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PS No. A1965-6/6