DATA SHEET PHOTOCOUPLER PS2535-1,PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTAGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor, and darlington transistor output enables low-current input. The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for surface mount. FEATURES • High collector to emitter voltage (VCEO = 350 V) PIN CONNECTION (Top View) • High isolation voltage (BV = 5 000 Vr.m.s.) • High current transfer ratio (CTR = 1 500 % TYP.) <R> • Ordering number of taping product: PS2535L-1-F3: 2 000 pcs/reel <R> • Safety standards 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector • UL approved: No. E72422 1 • BSI approved: No. 8221/8222 2 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option) APPLICATIONS • Telephone, Exchange equipment • FAX/MODEM The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PN10447EJ03V0DS (3rd edition) Date Published November 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1999, 2009 PS2535-1,PS2535L-1 <R> PACKAGE DIMENSIONS (Unit : mm) DIP Type PS2535-1 4.6±0.35 6.5±0.5 4 3 1 2 3.5±0.3 3.2±0.4 4.15±0.4 7.62 0 to 15° +0.1 0.25 –0.05 1.25±0.15 0.50±0.10 0.25 M 2.54 Lead Bending Type PS2535L-1 4.6±0.35 3 1 2 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 <R> 0.1 +0.1 –0.05 3.5±0.3 0.25 +0.1 –0.05 6.5±0.5 4 0.15 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 7 mm Inner Creepage Distance 4 mm Isolation Thickness 2 0.4 mm Data Sheet PN10447EJ03V0DS PS2535-1,PS2535L-1 <R> MARKING EXAMPLE No. 1 pin Mark 2535 NJ931 N J Assembly Lot 9 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package New PKG Made in Japan J Data Sheet PN10447EJ03V0DS 3 PS2535-1,PS2535L-1 <R> ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Specification Approval PS2535-1 PS2535-1-A Pb-Free Magazine case 100 pcs PS2535L-1 PS2535L-1-A PS2535L-1-F3 PS2535L-1-F3-A Embossed Tape 2 000 pcs/reel PS2535-1-V PS2535-1-V-A Magazine case 100 pcs PS2535L-1-V PS2535L-1-V-A PS2535L-1-V-F3 PS2535L-1-V-F3-A Standard products (UL, BSI approved) DIN EN60747-5-2 (VDE0884 Part2) Embossed Tape 2 000 pcs/reel Approved (Option) *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ΔPD/°C 0.7 mW/°C PD 70 mW IFP 0.5 A Collector to Emitter Voltage VCEO 350 V Emitter to Collector Voltage VECO 0.3 V IC 120 mA ΔPC/°C 2.0 mW/°C PC 200 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 μs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. 4 Data Sheet PN10447EJ03V0DS Application Part *1 Number PS2535-1 PS2535-1,PS2535L-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz MIN. TYP. MAX. Unit 1.2 1.4 V 5 μA 15 pF Transistor Collector to Emitter Dark Current ICEO VCE = 350 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF *2 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 18 μs Rise Time Fall Time *2 tf 400 10 1 500 400 nA 5 500 % 1.0 V Ω 11 5 *1 CTR rank N : 400 to 5 500 (%) L : 1 500 to 5 500 (%) *2 Test circuit for switching time Pulse input VCC IF PW = 1 ms, Duty cycle = 1/10 In monitor VOUT 50 Ω RL = 100 Ω Data Sheet PN10447EJ03V0DS 5 PS2535-1,PS2535L-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 60 0.7 mW/°C 40 20 0 25 100 75 50 240 220 200 180 160 140 2.0 mW/°C 120 100 80 60 40 20 25 0 100 75 50 100 Ambient Temperature TA (°C) Ambient Temperature TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 TA = +100°C +60°C +25°C 50 Forward Current IF (mA) Transistor Power Dissipation PC (mW) 80 Collector Current IC (mA) Diode Power Dissipation PD (mW) 100 10 5 0°C –25°C –50°C 1 0.5 5 mA 3 mA 2 mA 50 1 mA 10 5 IF = 0.5 mA 0.1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1 0.4 1.5 0.8 1.0 1.2 1.4 1.6 Collector Saturation Voltage VCE (sat) (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 100 000 VCEO = 350 V 10 000 CTR = 1 068% 2 290% 4 360% 1 000 100 10 1 –50 –25 3 mA 5 mA 0 25 50 75 100 2 mA 50 1 mA 10 5 IF = 0.5 mA 1 0 1 2 3 4 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. 6 0.6 Forward Voltage VF (V) Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.7 Data Sheet PN10447EJ03V0DS 5 PS2535-1,PS2535L-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.4 4 500 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 –50 –25 0 25 75 50 VCE = 2 V Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERTURE 4 000 3 500 3 000 2 500 2 000 1 500 1 000 500 0 0.1 100 0.5 5 10 40 Forword Current IF (mA) Ambient Temperature TA (°C) SWITCHING TIME vs. LORD RESISTANCE LONG TERM CTR DEGRADATION 1 000 1.2 VCC = 10 V, IC = 10 mA, CTR = 1 800% IF = 1 mA 100 tf td 10 ts 1 TA = 25°C 1.0 tr CTR (Relative Value) Switching Time t ( μs) 1 0.8 TA = 60°C 0.6 0.4 0.2 0.1 10 50 100 500 1000 0.0 10 102 103 104 105 106 Time (Hr) Load Resistance RL (Ω) Remark The graphs indicate nominal characteristics. Data Sheet PN10447EJ03V0DS 7 PS2535-1,PS2535L-1 TAPING SPECIFICATIONS (Unit : mm) 1.55±0.1 4.5 MAX. 10.3±0.1 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 7.5±0.1 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2535L-1-F3 Outline and Dimensions (Reel) 2.0±0.5 R 1.0 φ 21.0±0.8 φ 100±1.0 2.0±0.5 φ 13.0±0.2 φ 330±2.0 <R> 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel 8 Data Sheet PN10447EJ03V0DS 15.9 to 19.4 Outer edge of flange PS2535-1,PS2535L-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C. Data Sheet PN10447EJ03V0DS 9 PS2535-1,PS2535L-1 (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. 10 Data Sheet PN10447EJ03V0DS PS2535-1,PS2535L-1 <R> SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Spec. Unit 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 890 Vpeak Upr 1 335 Vpeak Upr 1 669 Vpeak UTR 8 000 Vpeak Upr = 1.5 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C VIO = 500 V dc at TA = 25°C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. 10 11 Ω Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance, minimum value Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = Tsi Data Sheet PN10447EJ03V0DS 9 Ω 11 PS2535-1,PS2535L-1 • The information in this document is current as of November, 2009. 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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E 12 Data Sheet PN10447EJ03V0DS PS2535-1,PS2535L-1 Caution GaAs Products This product uses gallium arsenide (GaAs). 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