Data Sheet PS2701A-1 R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER DESCRIPTION The PS2701A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance. This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light. It is designed for high density mounting applications. FEATURES <R> <R> • • • • • High isolation voltage (BV = 3 750 Vr.m.s.) SOP (Small Outline Package) type Ordering number of taping product: PS2701A-1-F3: 3 500 pcs/reel Pb-Free product Safety standards • UL approved: No. E72422 • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • BSI approved (BS EN 60065, BS EN 60950) • SEMKO, NEMKO, DEMKO, FIMKO approved (EN 60065, EN 60950) • DIN EN 60747-5-5 (VDE 0884-5) approved (Option) PIN CONNECTION (Top View) 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector APPLICATIONS • • • • Hybrid IC Measuring instruments Power supply Programmable logic controllers The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 1 of 12 PS2701A-1 PACKAGE DIMENSIONS (UNIT: mm) 1 2 7.0±0.3 4.4 0.15 +0.10 –0.05 3 2.0 0.1±0.1 2.1±0.2 4.0±0.5 4 2.54 0.5±0.3 0.4 +0.10 –0.05 0.25 M PHOTOCOUPLER CONSTRUCTION Parameter Air Distance Outer Creepage Distance Inner Creepage Distance Isolation Distance R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Unit (MIN.) 5 mm 5 mm 2.5 mm 0.3 mm Page 2 of 12 PS2701A-1 <R> MARKING EXAMPLE No. 1 pin Mark *1 Trade Mark R 701A N301 Type Number Assembly Lot *2 N 3 01 Week Assembled Year Assembled (Last 1 Digit) CTR Rank Code Remark "PS2" and "-1" are omitted from original type number Note: Bar indication contents of *1 and *2. Made in Taiwan *1: No indication *2: No indication Made in Taiwan Halogen free *1: " " (Horizontal bar) *2: No indication R 701A N301 R 701A N301 " " (Horizontal bar) :Made in Taiwan & Halogen free " " (Vertical bar) :Made in Japan " " (Horizontal bar) Made in Japan *1: No indication *2: " " (Vertical bar) Made in Japan Halogen free *1: No indication *2: " " (Horizontal bar) R 701A N301 R 701A N301 :Made in Japan & Halogen free R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 3 of 12 PS2701A-1 <R> ORDERING INFORMATION Part Number Order Number PS2701A-1-F3 PS2701A-1-F3-A PS2701A-1-V-F3 PS2701A-1-V-F3-A PS2701A-1-F3 PS2701A-1Y-F3-A PS2701A-1-V-F3 PS2701A-1Y-V-F3-A Note: Solder Plating Specification Pb-Free Special version (Pb-Free and Halogen Free) Packing Style Safety Standard Approval Embossed Tape 3 500 pcs/reel Standard products (UL, CSA, BSI, SEMKO, NEMKO, DEMKO, FIMKO approved) Embossed Tape 3 500 pcs/reel DIN EN 60747-5-5 (VDE0884-5) Approved (Option) Embossed Tape 3 500 pcs/reel Standard products (UL, CSA, BSI, SEMKO, NEMKO, DEMKO, FIMKO approved) Embossed Tape 3 500 pcs/reel DIN EN 60747-5-5 (VDE0884-5) Approved (Option) Application Part Number*1 PS2701A-1 PS2701A-1 *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Symbol Ratings Unit Forward Current (DC) Parameter IF 50 mA Reverse Voltage VR 6 V ΔPD/°C 0.8 mW/°C PD 80 mW IFP 0.5 A Collector to Emitter Voltage VCEO 70 V Emitter to Collector Voltage VECO 5 V IC 30 mA ΔPC/°C 1.5 mW/°C PC 150 mW BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C <R> Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage Note: *2 *1. PW = 100 μs, Duty Cycle = 1% *2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 4 of 12 PS2701A-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Forward Voltage Reverse Current Diode Terminal Capacitance Symbol VF IR Conditions Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 70 V Coupled Current Transfer *1 Ratio (IC/IF) CTR IF = 5 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz Rise Time*2 tr *2 Fall Time <R> MAX. 1.4 5 10 0.13 100 nA 300 % 0.3 V Ω 1011 VCC = 5 V, IC = 2 mA, RL = 100 Ω Unit V μA pF 50 0.4 pF 5 μs tf 7 ton 8 *2 toff 10 Turn-off Time Note: TYP. 1.2 *2 Turn-on Time <R> MIN. IF = 5 mA VR = 5 V *1. CTR rank N: 50 to 300 (%) P: 150 to 300 (%) L: 100 to 300 (%) M: 50 to 150 (%) *2. Test Circuit for Switching Time Pulse input VCC Input PW = 100 μs, Duty cycle = 1/10 ton IF 50 Ω td VOUT toff ts RL = 100 Ω 90% Output 10% tr R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 tf Page 5 of 12 PS2701A-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 0.8 mW/°C 80 60 40 20 0 0 25 50 75 100 150 100 50 25 50 75 100 125 Ambient Temperature TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 TA = +100°C +60°C +25°C 10 5 0°C –25°C –55°C 1 0.5 0.1 0.05 0.7 1.5 mW/°C Ambient Temperature TA (°C) Collector Current IC (mA) Forward Current IF (mA) 50 200 0 0 125 100 IF = 10 mA 25 20 15 5 mA 10 2 mA 5 1 mA 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 0 1.5 Forward Voltage VF (V) 2 4 6 8 10 Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 000 10 IF = 10 mA 5 mA Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) <R> VCE = 24 V 1 000 VCE = 70 V 100 10 1 0 25 50 75 100 Ambient Temperature TA (°C) 2 mA 1 mA 1 0.1 0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE (sat) (V) Remark The graphs indicate nominal characteristics. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 6 of 12 PS2701A-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 Current Transfer Ratio CTR (%) 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 5 mA, VCE = 5 V 0.2 90% 300% 0 –75 –50 –25 0 100 Switching Time t ( μ s) 300 25 50 75 250 VCE = 5 V, n=3 200 Sample A B C 150 100 50 0 0.01 100 0.1 1 10 100 Ambient Temperature TA (°C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 1 000 IC = 2 mA, VCC = 5 V, CTR = 236% IF = 5 mA, VCC = 5 V, CTR = 236% tf tr Switching Time t ( μ s) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 10 td ts 1 tf 100 ts 10 tr 0.1 10 100 1 000 10 000 Load Resistance RL (Ω) 1 1 td 10 100 Load Resistance RL (kΩ) FREQUENCY RESPONSE 5 Normalized Gain GV 0 –5 100 Ω –10 300 Ω –15 RL = 1 kΩ –20 IF = 5 mA, VCE = 5 V –25 0.1 1 10 100 1 000 Frequency f (kHz) Remark The graphs indicate nominal characteristics. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 7 of 12 PS2701A-1 <R> TAPING SPECIFICATIONS (UNIT: mm) 1.55±0.1 2.9 MAX. 7.4±0.1 5.5±0.05 1.5+0.1 –0 12.0±0.2 2.0±0.05 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 2.4±0.1 4.6±0.1 0.3 8.0±0.1 Tape Direction PS2701A-1-F3 Outline and Dimensions (Reel) φ 21.0±0.8 φ 13.0±0.2 R 1.0 φ 100±1.0 2.0±0.5 φ13.0±0.2 φ 330±2.0 2.0±0.5 13.5±1.0 17.5±1.0 Packing: 3 500 pcs/reel R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 11.9 to 15.4 Outer edge of flange Page 8 of 12 PS2701A-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature • Time of peak reflow temperature • Time of temperature higher than 220°C • Time to preheat temperature from 120 to 180°C • Number of reflows • Flux 260°C or below (package surface temperature) 10 seconds or less 60 seconds or less 120±30 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature • Time • Preheating conditions • Number of times • Flux 260°C or below (molten solder temperature) 10 seconds or less 120°C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron • Peak Temperature (lead part temperature) 350°C or below • Time (each pin) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 9 of 12 PS2701A-1 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collectoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below IF = 1 mA. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 10 of 12 PS2701A-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) <R> <R> Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) Material group (DIN EN 60664-1 VDE0110 Part 1) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Spec. Unit 55/100/21 UIORM Upr 707 1 131 Vpeak Vpeak Upr 1 325 Vpeak UTR 6 000 2 Vpeak CTI 175 Tstg TA III a –55 to +150 –55 to +100 °C Ris MIN. Ris MIN. 1012 11 10 Ω Ω Tsi Isi Psi 150 300 500 °C mA mW Ris MIN. 109 Ω °C Page 11 of 12 PS2701A-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 Page 12 of 12 Revision History Rev. 1.00 6.00 PS2701A-1 Data Sheet Date Page May 20, 2004 Jan 9, 2013 − Thoughout p.1 p.3 p.4 Description Summary This data sheet was released as PN10396EJ01V0DS Renesas format is applied to this data sheet. The safety standards are revised. The explanation in MARKING EXAMPLE is revised. ORDERING INFORMATION is modified with the revision of the safety standards. The value in Ratings of Parameter “Forward Current (DC)” is changed from 30 to 50. p.5 Turn-on Time (ton) and Turn-off Time(toff) are added to the table in ELECTRICAL CHARACTERISTICS. p.7 The graph of LONG TERM CTR DEGRADATION is deleted from those in TYPICAL CHARACTERISTICS. p.8 PS2701A-1-F4 is deleted form Tape Direction image in TAPING SPECIFICATIONS. p.11 The value in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT is changed as follows. -- Test voltage is changed from the factor, 1.5, and the value, 1 060, to 1.6 and 1 131, respectively. All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. California Eastern Laboratories, Inc. 4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A. Tel: +1-408-919-2500, Fax: +1-408-988-0279 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. [Colophon 2.2]