A Business Partner of Renesas Electronics Corporation. Preliminary PS2915-1 Data Sheet R08DS0112EJ0100 Rev.1.00 HIGH CTR, AC INPUT RESPONSE TYPE 4-PIN ULTRA SMALL FLAT-LEAD PHOTOCOUPLER Nov 01, 2013 DESCRIPTION The PS2915-1 is an optically coupled isolator containing GaAs light emitting diodes and an NPN silicon phototransistor in one package for high density mounting applications. An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30%, compared with the PS28xx series. FEATURES <R> • • • • • Ultra small flat-lead package (4.6 (L) × 2.5 (W) × 2.1 (H) mm) High current transfer ratio (CTR = 200% TYP. @ IF = ±1 mA, VCE = 5 V) High isolation voltage (BV = 2 500 Vr.m.s.) Ordering number of taping product: PS2915-1-F3, 3 500 pcs/reel Safety standards • UL approved: No. E72422 • BSI approved (BS EN 60065, BS EN 60950) • DIN EN 60747-5-5 (VDE 0884-5) approved (Option) APPLICATIONS PIN CONNECTION (TOP VIEW) 4 3 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1 2 • DC/DC converter • Modem/PC card The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 1 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 <R> PACKAGE DIMENSIONS (UNIT: mm) 2.5±0.3 4.6±0.2 R 2 5.0±0.2 0.15 +0.1 –0.05 2.1 MAX. 1 4.1 MIN. 3 4 0.4±0.1 0.2±0.1 1.27 <R> MARKING EXAMPLE Ni / Pd / Au PLATING Last number of type No. : 15 15 *1 Company Initial (Engraved mark) R 320 No. 1 pin mark (Nicked corner) Assembly lot 3 20 Week assembled Year assembled *1 Bar : Pb-Free PHOTOCOUPLER CONSTRUCTION Parameter MIN. Air Distance 4 mm Creepage Distance 4 mm Isolation Distance R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 0.4 mm Page 2 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 <R> ORDERING INFORMATION Part Number Order Number PS2915-1 PS2915-1-F3 PS2915-1-AX PS2915-1-F3-AX Solder Plating Specification Pb-Free (Ni/Pd/Au) PS2915-1-V PS2915-1-V-AX PS2915-1-V-F3 PS2915-1-V-F3-AX Note: Packing Style 50 pcs (Tape 50 pcs cut) Embossed Tape 3 500 pcs/reel 50 pcs (Tape 50 pcs cut) Embossed Tape 3 500 pcs/reel Safety Standard Approval Application Part Number*1 Standard products PS2915-1 (UL, BSI approved) DIN EN60747-5-5 (VDE 0884-5) Approved(Option) *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit IF ±50 mA ΔIF/°C 0.5 mA/°C Peak Forward Current*1 IFP ±0.5 A Power Dissipation PD 60 mW Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 5 V IC 40 mA ΔPC/°C 1.2 mW/°C PC 120 mW BV 2 500 Vr.m.s. Total Power Dissipation PT 160 mW Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Forward Current Forward Current Derating Transistor Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 Notes: *1. PW = 100 μs, Duty Cycle = 1% *2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output Pins 1-2 shorted together, 3-4 shorted together. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 3 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 <R> ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Conditions Forward Voltage VF IF = ±1 mA Terminal Capacitance Ct V = 0 V, f = 1 MHz Transistor Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 40 V Coupled Current Transfer Ratio (IC/IF)*1 CTR IF = ±1 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz *2 tr Fall Time TYP. MAX. Unit 0.9 1.1 1.3 V 30 100 Turn-on Time Storage Time*2 *2 Turn-off Time 100 nA 200 400 % 0.13 0.3 V Ω 10 VCC = 5 V, IC = 2 mA, RL = 1 kΩ 0.4 pF 5 μs 10 tf *2 pF 11 RI-O *2 MIN. IF = ±1 mA, IC = 0.2 mA Isolation Resistance Rise Time <R> Symbol 40 μs ts 10 μs toff 120 μs ton VCC = 5 V, IF = ±1 mA, RL = 5 kΩ Notes: *1 CTR rank N : 100 to 400 (%) *2 Test circuit for switching time Pulse Input VCC Input td PW = 100 s Duty cycle = 1/10 ton ts toff 90% IF In monitor IC VOUT Output 10% tr R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 tf Page 4 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Maximum Forward Current IF (mA) 80 60 40 0.5 mA/°C 20 50 25 0 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 75 100 140 120 100 80 60 40 20 25 0 100 FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 20 CTR = 200% Collector Current IC (mA) TA = +100°C +60°C +25°C 1 0°C –25°C –50°C 0.1 IF = 5 mA 16 14 12 10 8 2 mA 6 4 1 mA 0.5 mA 2 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 000 10 CTR = 200% 5 mA 2 mA Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 125 Ambient Temperature TA (°C) 18 Forward Current IF (mA) 75 Ambient Temperature TA (°C) 100 10 50 1 000 VCE = 20 V 40 V 100 10 1 –25 0 25 50 75 100 Ambient Temperature TA (°C) 1 mA 1 IF = 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) Remark The graphs indicate nominal characteristics. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 5 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 <R> CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.4 500 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 5 V 0.2 0.0 –50 0 –25 25 50 75 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE VCE = 5 V, n=3 400 Sample A B C 300 200 100 0 0.1 100 1 100 10 Ambient Temperature TA (°C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 10 000 1 000 100 0 toff Normalized Gain Gv Switching Time t (μs) IF = 1 mA, VCC = 5 V, CTR = 200% ts ton 10 –5 100 Ω RL = 1 kΩ –10 300 Ω –15 –20 1 1k 10k 100 k 1 000 k Load Resistance RL (Ω) –25 0.1 1 10 100 1 000 Frequency f (kHz) Remark The graphs indicate nominal characteristics. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 6 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 TAPING SPECIFICATIONS (UNIT: mm) 1.75±0.1 Outline and Dimensions (Tape) 5.5±0.05 2.9 MAX. 5.3±0.1 1.5+0.1 –0 4.0±0.1 12.0±0.2 2.0±0.05 0.3 1.55±0.05 2.4±0.1 2.9±0.1 4.0±0.1 Tape Direction PS2915-1-F3 R R R R Outline and Dimensions (Reel) 2.0±0.5 330±2.0 2.0±0.5 13.0±0.2 Packing: 3 500 pcs/reel R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 100±1.0 21.0±0.8 <R> 13.5±1.0 11.9 to 15.4 Outer edge of flange Page 7 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) 5.7 4.7 4.14 0.6 (0.35) 1.27 0.8 ( ) : Reference value 24-R0.1 Remark This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in this figure must be evaluated before use. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 8 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature • Time of peak reflow temperature • Time of temperature higher than 220°C • Time to preheat temperature from 120 to 180°C • Number of reflows • Flux 260°C or below (package surface temperature) 10 seconds or less 60 seconds or less 120 ± 30 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature • Time • Preheating conditions • Number of times • Flux <R> 260°C or below (molten solder temperature) 10 seconds or less 120°C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron • Peak Temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 9 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 10 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 <R> SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 × UIORM., Pd < 5 pC Spec. Unit 55/100/21 UIORM Upr 570 912 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM., Pd < 5 pC Upr 1068 Vpeak Highest permissible overvoltage UTR 4 000 Vpeak CTI 175 Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 1012 11 10 Ω Ω Tsi Isi Psi 150 300 500 °C mA mW Ris MIN. 109 Ω Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 11 of 12 A Business Partner of Renesas Electronics Corporation. PS2915-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0112EJ0100 Rev.1.00 Nov 01, 2013 Page 12 of 12 Revision History PS2915-1 Data Sheet Rev. Date Page 2.00 1.00 May 25, 2006 Nov 01, 2013 − Throughout p.1 p.2 p.3 p.4 p.6 p.7 p.9 p.11 Description Summary First edition issued Renesas format is applied to this data sheet. Modification of FEATURES Modification of PACKAGE DIMENSIONS Modification of MARKING EXAMPLE Modification of ORDERING INFORMATION Modification of ELECTRICAL CHARACTERISTICS Modification of TYPICAL CHARACTERISTICS Modification of TAPING SPECIFICATIONS Modification of NOTES ON HANDLING Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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