NCV97310MW33GEVB NCV97310 Evaluation Board User'sManual Description The NCV97310 is 3-output regulator consisting of a low-Iq battery-connected 3 A 2 MHz non-synchronous switcher and two low-voltage 1.5 A 2 MHz synchronous switchers; all using integrated power transistors. The high-voltage switcher is capable of converting a 4.1 V to 18 V battery input to a 5 V or 3.3 V output at a constant 2 MHz switching frequency, delivering up to 3 A. In overvoltage conditions up to 36 V, the switching frequency folds back to 1 MHz; in load dump conditions up to 45 V the regulator shuts down. The output of the battery-connected buck regulator serves as the low voltage input for the 2 synchronous switchers. Each downstream output is adjustable from 1.2 V to 3.3 V, with a 1.5 A current limit and a constant 2 MHz switching frequency. Each switcher has independent enable and reset pins, giving extra power management flexibility. For low-Iq operating mode the low-voltage switchers are disabled, and the standby rail is supplied by a low-Iq LDO (up to 150 mA) with a typical Iq of 30 mA. The LDO regulator is in parallel to the high-voltage switcher, and is activated when the switcher is forced in standby mode. All 3 SMPS outputs use peak current mode control with internal slope compensation, internally-set soft-start, battery undervoltage lockout, battery overvoltage protection, cycle-by-cycle current limiting, hiccup mode short-circuit protection and thermal shutdown. An error flag is available for diagnostics. http://onsemi.com EVAL BOARD USER’S MANUAL Key Features • Low Quiescent Current in Standby Mode • 2 Microcontroller Enabled Low Voltage Synchronous Buck Converters • Large Conversion Ratio of 18 V to 3.3 V Battery • • • • • • • Connected Switcher Wide Input of 4.1 to 45 V with Undervoltage Lockout (UVLO) Fixed Frequency Operation Adjustable from 2.0 to 2.6 MHz Internal 1.5 ms Soft-starts Cycle-by-Cycle Current Limit Protections Hiccup Overcurrent Protections (OCP) Individual Reset Pins with Adjustable Delays These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Infotainment, Body Electronics, Telematics, ECU Figure 1. Evaluation Board Photo © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 0 1 Publication Order Number: EVBUM2223/D NCV97310MW33GEVB SEL STBYB VDRV VDD VDRV1 BST1 REGULATOR 1 3V3 STEP DOWN VBAT SW1 COMP1 VINL LOGIC RSTB RMIN LINEAR REGULATOR EN RSTB1 VOUT Master Enable GND1 VDRV VDRV 2 BST 2 REGULATOR 2 1V2 ... 3V3 STEP DOWN VIN2 SW2 FB 2 EN2 RSTB RSTB2 GND2 BST 3 REGULATOR 3 1V 2...3V3 STEP DOWN VIN3 SW3H SW3L FB3 EN3 RSTB RSTB3 GND3 TEMP OT WARNING OSC ROSC VIN _UVLO VIN _OV ERR RSTB1 RSTB2 RSTB3 RMOD RDEPTH ERRB Figure 2. NCV97310 Block Diagram http://onsemi.com 2 NCV97310MW33GEVB TYPICAL APPLICATION C OUT1 C BST1 D1 L1 VOUT1 R FB2D C DRV1 C BST2 RMIN RFB2U 32 VBAT 1 C IN1 RDEPTH R MOD CCOMP1 RCOMP1 VINL VOUT FB2 RMIN BST2 GND 2 C OUT2 SW 2 STBYB VIN2 RDEPTH VIN3 RMOD VDRV 2 RSTB1 SW 3H COMP 1 SW3L ROSC GND3 ERRB EN2 RSTB 2 GND1 RSTB3 FB3 EN3 9 BST3 L2 C IN2 C DRV2 L3 COUT3 17 16 R FB3U C BST3 Figure 3. Typical Application Table 1. EVALUATION BOARD TERMINALS Pin Name Function VBAT Positive dc input voltage GND Common dc return VOUT1 Positive 3.3 V dc output voltage (LDO/Switcher 1) VOUT2 Positive DC output voltage (Switcher 2) VOUT3 Positive DC output voltage (Switcher 3) EN STBYB Master enable input. Includes jumper J3 to connect to VBAT. Standby enable input. Includes jumper J4 to connect to VBAT. EN2 Switcher 2 enable input. Includes jumper J6 to connect to VOUT1. EN3 Switcher 3 enable input. Includes jumper J5 to connect to VOUT1. ERRB Error flag combining temperature and input and output voltage sensing. RST1B Reset with adjustable delay. Goes low when the VOUT1 is out of regulation. RST2B Reset with adjustable delay. Goes low when the VOUT2 is out of regulation. RST3B Reset with adjustable delay. Goes low when the VOUT3 is out of regulation. http://onsemi.com 3 VOUT2 24 EN 8 R OSC 25 SW 1 VDRV 1 BST1 VBAT VOUT3 NCV97310MW33GEVB Table 2. ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND) Rating Value Unit Dc Supply Voltage (VBAT, EN, STBYB) −0.3 to 36 V Dc Supply Voltage (VIN2, VIN3) −0.3 to 12 V Dc Supply Voltage (RSTB1, RSTB2, RSTB3, ERRB, EN2, EN3) −0.3 to 6 V −55 to 150 °C Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. ELECTRICAL CHARACTERSITICS (TA = 25°C, 4.5 ≤ VIN ≤ 18 V, IOUT ≤ 2 A, unless otherwise specified) Characteristic Conditions Typical Value Unit Output Voltage (VOUT1) 3.3 V Output Voltage (VOUT2) 1.8 V Output Voltage (VOUT3) 1.2 V REGULATION Line Regulation (VOUT1) IOUT1 = 1.0 A 0.03 % Line Regulation (VOUT2) IOUT2 = 1.0 A 0.01 % Line Regulation (VOUT3) IOUT3 = 1.0 A 0.001 % Load Regulation (VOUT1) VBAT = 13.2 V 0.3 % Load Regulation (VOUT2) VBAT = 13.2 V 0.02 % Load Regulation (VOUT3) VBAT = 13.2 V 0.03 % Switching Frequency 2.0 MHz Soft-start Time 1.4 ms 50 kW ≥ ROSC ≥ 10 kW 2.0 to 2.6 MHz Peak Current Limit (VOUT1) STBYB = 0 V 0.2 A Peak Current Limit (VOUT1) STBYB = 5 V 4.4 A Peak Current Limit (VOUT2) 2.9 A Peak Current Limit (VOUT3) 2.9 A SWITCHING ROSC Frequency Range CURRENT LIMIT PROTECTION Input Undervoltage Lockout (UVLO) VBAT Decreasing 3.9 V Input Overvoltage Protection VBAT Increasing 36 V Thermal Warning TJ Rising 150 °C Thermal Shutdown TJ Rising 170 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 4 GND0 1 VBAT RST1B Figure 4. NCV97310GEVB 3.3 V Board Schematic CIN2 CIN3 R6 10K VOUT1 R3 10K VOUT1 RST2B J2 J1 R5 10K ERRB R4 10K VOUT1 COMP1 RST1B STBYB EN 2.2 uF CIN4 VOUT1 4.7 uF 4.7 uF 1 uF CIN1 RST3B Place CIN5 on bottom of PCB 1.0 uH CIN0 CIN5 100 uF 4.7 uF L0 2 1 2 1 1 VBAT VIND RST3B RST2B ERRB 22 pF CCOMP2 COMP1 RDEPTH DNP RMOD DNP STBYB EN TP2 7 6 5 4 3 2 1 DRV1 COMP1 RST1 RMOD RDEPTH STBY EN VBAT U1 Place GND near ERRB for logic reference. VOUT1 1 J4 2 330 pF ROSC DNP GND ROSC 8 ROSC RCOMP1 TP3 12.4K TP1 CCOMP1 VBAT_IC 32 SW1 VBAT_1 31 EN2 EN2 CBST1 0.1 uF 50V CDRV1 0.1 uF VDRV1 Place CIN0, L0, CIN1, CIN2 on VBAT side. Place CIN3 close to VINL (pin 29) Place CIN4 close to VBAT (pin 1) 29 C3 0.1 uF RFB2L 20.0K NCV97310MW33R2G VINL D1 NRVB440MFS 26 NC 4.7 uH BST2 RFB3L DNP R1 C1 100 pF EN3 CBST3 0.1 uF SW3 SW3 10K C2 RFB3U 17 18 19 1 100 pF 100 pF 2 VOUT1 10.0 L3 1.0 uH CSNB3 RSNB3 J3 CDRV2 0.47 uF 10 uF 10 uF COUT31 COUT32 VOUT3 10 uF 10 uF 20 10.0 VIN2 VOUT2 VIN2 R7 0.0 VOUT1 (1.2 V) VOUT3 (1.8 V) 1 1 1 1 to VIN2 VOUT2 4.7 uF GND3 VOUT3 GND2 VOUT2 CO15 Place close VIN2 Place close 1 uF to VIN2 CO14 VIN2 21 SW2 CBST2 0.1 uF 10 uF COUT21 COUT22 SW2 10K 100 pF RFB2U 10 uF L2 2.2 uH CSNB2 RSNB2 0.0 10 uF COUT11 COUT12 COUT13 22 23 24 R2 0.0 EN3 BST3 GND3 SW3L SW3H VDRV2 VIN3 VIN2 SW2 GND2 FB3 FB3 FB2 FB2 BST2 25 L1 EPAD 33 SW1 30 BST1 RST2 11 GND1 12 ERR 9 28 VOUT RST3 13 EN2 10 27 FB2 FB3 14 EN3 15 5 16 http://onsemi.com BST3 SW1 GND1 1 VOUT1 1 (3.3 V) VOUT1 NCV97310MW33GEVB NCV97310MW33GEVB Operational Guidelines 5. Connect a dc enable voltage, within the 2.0 V to 6 V range, between EN2 and GND. This will power up switcher 2. You may use jumper J4 to connect EN2 directly to VOUT1. The VOUT2 signal should be 1.8 V. 6. Connect a dc enable voltage, within the 2.0 V to 6 V range, between EN3 and GND. This will power up switcher 3. You may use jumper J3 to connect EN3 directly to VOUT1. The VOUT3 signal should be 1.2 V. 1. Connect a dc input voltage, within the 6.0 V to 36 V range, between VBAT and GND. 2. Connect a load (< 150 mA) between VOUT1 and GND 3. Connect a dc enable voltage, within the 2.0 V to 36 V range, between EN and GND. This will enable the internal LDO for low Iq mode. You may use jumper J1 to connect EN directly to VBAT. a. The VOUT1 signal should be 3.3 V. b. The VOUT2 signal should be disabled (regardless of EN2 state) and read 0 V. c. The VOUT3 signal should be disabled (regardless of EN3 state) and read 0 V. 4. Connect a dc enable voltage, within the 2.0 V to 36 V range, between STBYB and GND. This will exit low Iq mode and power up switcher 1. You may use jumper J2 to connect STBYB directly to VBAT. The VOUT1 signal should still be 3.3 V. You may now add a higher load to VOUT1. Figure 5. NCV97310 Board Connections http://onsemi.com 6 NCV97310MW33GEVB APPLICATION INFORMATION Output Voltage Selection The voltage outputs for switcher 2 and switcher 3 are adjustable and can be set with a resistor divider. The FB reference for both switchers is 1.2 V. Time Domain Frequency Domain Unmodulated VOUT 2 (VOUT 3) V RUPPER t fc 3fc 5fc 7fc 9fc t fc 3fc 5fc 7fc 9fc FBx = 1.2 V V RLOWER The spread spectrum used in the NCV97310 is an “up-spread” technique, meaning the switching frequency is spread upward from the 2.0 MHz base frequency. For example, a 5 % spread means that the switching frequency is swept (spread) from 2.0 MHz up to 2.1 MHz in a linear fashion – this is called the modulation depth. The rate at which this spread takes place is called the modulation frequency. For example, a 10 kHz modulation frequency means that the frequency is swept from 2.0 MHz to 2.1 MHz in 50 ms and then back down from 2.1 MHz to 2.0 MHz in 50 ms. The upper resistor is set to 10 kW and is part of the feedback loop. To maintain stability over all conditions, it is recommended to change the only the lower feedback resistor to set the output voltage. Use the following equation: R LOWER + R UPPER V FB V OUT*V FB Some common setups are listed below: Desired Output (V) VREF (V) RUPPER (kW, 1%) RLOWER (kW, 1%) 1.2 1.2 10.0 NP 1.5 1.2 10.0 40.0 1.8 1.2 10.0 20.0 2.5 1.2 10.0 9.31 3.3 1.2 10.0 5.76 Spread Spectrum In SMPS devices, switching translates to higher efficiency. Unfortunately, the switching leads to a much noisier EMI profile. We can greatly decrease some of the radiated emissions with some spread spectrum techniques. Spread spectrum is used to reduce the peak electromagnetic emissions of a switching regulator. http://onsemi.com 7 NCV97310MW33GEVB The modulation depth and modulation frequency are each set by 2 external resistors to GND. The modulation frequency can be set from 5 kHz up to 50 kHz using a resistor from the RMOD pin to GND. The modulation depth can be set from 3% up to 30% of the nominal switching frequency using a resistor from the RDEPTH pin to GND. Please see the curves below for typical values: Modulation Depth (%FSW) Modulation Depth vs. RDEPTH Modulation Frequency (kHz) Modulation Frequency vs. RMOD 30.0% 25.0% 20.0% 15.0% 10.0% 5.0% 0.0% 0 52.00 47.00 42.00 37.00 32.00 27.00 22.00 17.00 12.00 7.00 2.00 10 20 30 40 50 60 RDEPTH (kW) Spread spectrum is automatically turned off when there is a short to GND or an open circuit on either the RMOD pin or the RDEPTH pin. Please be sure that the ROSC pin is an open circuit when using spread spectrum. 0 10 20 30 40 50 60 RMOD (kW) TYPICAL PERFORMANCE Efficiency NCV97310 − SW1 Efficiency − 3.3 V 100% 90% 80% 70% Efficiency 60% 50% 40% 30% 20% VIN = 8.0 V VIN = 13.2 V 10% VIN = 18.0 V 0% 0 0.5 1 1.5 2 2.5 Output Current (A) Figure 6. Efficiency for SW1 with a 3.3 V Output http://onsemi.com 8 3 3.5 NCV97310MW33GEVB NCV97310 − SW2 Efficiency − 1.8 V 100% 90% 80% Efficiency 70% 60% 50% 40% 30% VIN = 3.3 V 20% VIN = 5.0 V 10% VIN = 8.0 V 0% 0 0.5 1 1.5 2 2.5 Output Current (A) Figure 7. Efficiency for SW2 with a 1.8 V Output NCV97310 − SW3 Efficiency − 1.2 V 100% 90% 80% Efficiency 70% 60% 50% 40% 30% 20% VIN = 3.3 V 10% VIN = 5.0 V 0% 0 0.5 1 1.5 Output Current (A) Figure 8. Efficiency for SW3 with a 1.2 V Output http://onsemi.com 9 2 2.5 NCV97310MW33GEVB Line Regulation NCV97310 − SW1 − 3.3 V − Line Regulation 2.00% 1.50% Line Regulation 1.00% 0.50% 0.00% −0.50% IOUT = 100 mA −1.00% IOUT = 500 mA IOUT = 1.0 A IOUT = 2.0 A −1.50% IOUT = 3.0 A −2.00% 0 5 10 15 20 25 30 Input Voltage (V) Figure 9. Line Regulation for SW1 with a 3.3 V Output NCV97310 − SW2 − 1.8 V − Line Regulation 0.10% Line Regulation 0.05% 0.00% IOUT = 100 mA −0.05% IOUT = 500 mA IOUT = 1.0 A IOUT = 2.0 A −0.10% 3 4 5 6 7 Input Voltage (V) Figure 10. Line Regulation for SW2 with a 1.8 V Output http://onsemi.com 10 8 9 NCV97310MW33GEVB NCV97310 − SW3 − 1.2 V − Line Regulation 0.10% Line Regulation 0.05% 0.00% IOUT = 100 mA −0.05% IOUT = 500 mA IOUT = 1.0 A IOUT = 2.0 A −0.10% 3 3.5 4 4.5 5 5.5 Input Voltage (V) Figure 11. Line Regulation for SW3 with a 1.2 V Output Load Regulation NCV97310 − SW1 Load Regulation − 3.3 V 0.50% VIN = 8.0 V 0.40% VIN = 13.2 V VIN = 18.0 V 0.30% Load Regulation 0.20% 0.10% 0.00% −0.10% −0.20% −0.30% −0.40% 0 0.5 1 1.5 2 2.5 Output Current (A) Figure 12. Load Regulation for SW1 with a 3.3 V Output http://onsemi.com 11 3 3.5 NCV97310MW33GEVB NCV97310 − SW2 Load Regulation − 1.8 V 0.10% VIN = 3.3 V VIN = 5.0 V VIN = 8.0 V Load Regulation 0.05% 0.00% −0.05% −0.10% 0 0.5 1 1.5 2 2.5 Output Current (A) Figure 13. Load Regulation for SW2 with a 1.8 V Output NCV97310 − SW3 Load Regulation − 1.2 V 0.10% VIN = 3.3 V VIN = 5.0 V Load Regulation 0.05% 0.00% −0.05% −0.10% 0 0.5 1 1.5 2 Output Current (A) Figure 14. Load Regulation for SW3 with a 1.2 V Output http://onsemi.com 12 2.5 GND0 1 VBAT 1 VBAT RST1B CIN2 CIN3 R6 10K VOUT1 R3 10K VOUT1 RST2B J2 J1 R5 10K ERRB R4 10K VOUT1 COMP1 RST1B STBYB EN 2.2 uF CIN4 VOUT1 4.7 uF 4.7 uF 1 uF CIN1 RST3B Place CIN5 on bottom of PCB 1.0 uH CIN0 CIN5 100 uF 4.7 uF L0 2 1 2 1 VBAT_1 RST3B RST2B ERRB 22 pF CCOMP2 COMP1 RDEPTH DNP RMOD DNP STBYB EN TP2 7 6 5 4 3 2 1 DRV1 COMP1 RST1 RMOD RDEPTH STBY EN VBAT U1 Place GND near ERRB for logic reference. VOUT1 1 J4 2 330 pF ROSC DNP GND ROSC 8 ROSC RCOMP1 TP3 12.4K TP1 CCOMP1 VBAT_IC VIND 32 SW1 Place CIN0, L0, CIN1, CIN2 on VBAT side. Place CIN3 close to VINL (pin 29) Place CIN4 close to VBAT (pin 1) 31 EN2 EN2 CBST1 0.1 uF 50V CDRV1 0.1 uF VDRV1 D1 NRVB440MFS C3 0.1 uF RFB2L 20.0K NCV97310MW33R2G 26 4.7 uH 11 RFB3L DNP R1 100 pF EN3 CBST3 0.1 uF SW3 SW3 10K C2 RFB3U 17 18 19 1 100 pF 100 pF 2 VOUT1 10.0 L3 1.0 uH CSNB3 RSNB3 J3 CDRV2 0.47 uF 10 uF 10 uF COUT31 COUT32 VOUT3 10 uF 10 uF 20 10.0 VIN2 VOUT2 VIN2 R7 0.0 VOUT1 (1.2 V) VOUT3 (1.8 V) 1 1 1 1 to VIN2 VOUT2 4.7 uF GND3 VOUT3 GND2 VOUT2 CO15 Place close VIN2 Place close 1 uF to VIN2 CO14 VIN2 21 SW2 CBST2 0.1 uF 10 uF COUT21 COUT22 SW2 10K 100 pF RFB2U 10 uF L2 2.2 uH CSNB2 RSNB2 0.0 C1 10 uF COUT11 COUT12 COUT13 22 23 24 R2 0.0 EN3 BST3 GND3 SW3L SW3H VDRV2 VIN3 VIN2 SW2 GND2 FB3 FB3 BST2 FB2 FB2 EPAD 33 L1 30 BST1 RST2 BST2 25 SW1 29 VINL GND1 12 ERR 9 28 VOUT RST3 13 EN2 10 27 FB2 FB3 14 NC EN3 15 13 16 http://onsemi.com BST3 SW1 GND1 1 VOUT1 1 (3.3 V) VOUT1 NCV97310MW33GEVB SCHEMATIC NCV97310MW33GEVB PCB LAYOUT Figure 15. Top View Figure 16. Bottom View http://onsemi.com 14 NCV97310MW33GEVB BILL OF MATERIALS Table 4. BILL OF MATERIALS Reference Designator(s) Manufacturer’s Part Number Substitution Allowed Qty. Description Value Tolerance Footprint Manufacturer C1, C2, CSNB2, CSNB3 4 CAP CER 100 pF 50 V 5% NP0 0603 100 pF 5% 603 Murata Electronics North America GCM1885C1H101JA16D Yes C3, CBST1, CBST2, CBST3, CDRV1 5 CAP CER 0.1 mF 50 V 10% X7R 0603 0.1 mF 10% 603 Murata Electronics North America GCM188R71H104KA57D Yes CCOMP1 1 CAP CER 330 pF 50 V 5% NP0 0603 330 pF 5% 603 Murata Electronics North America GCM1885C1H331JA16D Yes CCOMP2 1 CAP CER 22 pF 50 V 5% NP0 0603 22 pF 5% 603 Murata Electronics North America GCM1885C1H220JA16D Yes CDRV2 1 CAP CER 0.47 mF 16 V 10% X7R 0603 0.47 mF 10% 603 Murata Electronics North America GCM188R71C474KA55D Yes CIN0, CIN1, CIN2 3 CAP CER 4.7 mF 50 V 10% X7R 1206 4.7 mF 10% 1206 TDK Corporation C3216X7R1H475K160AC Yes CIN3 1 CAP CER 1.0 mF 50 V 10% X7R 1206 1.0 mF 10% 1206 Murata Electronics North America GCM31MR71H105KA55L Yes CIN4 1 CAP CER 2.2 mF 50 V 10% X7R 1206 2.2 mF 10% 1206 Murata Electronics North America GCM31CR71H225KA55L Yes CIN5 1 CAP ALUM 100 mF 50 V 20% SMD 100 mF 20% FK_V_E Chemi-Con EMZA500ADA101MHA0G Yes CO14 1 CAP CER 1 mF 16 V 10% X7R 0603 1.0 mF 10% 603 Murata Electronics North America GCM188R71C105KA64D Yes CO15 1 CAP CER 4.7 mF 16 V 10% X7R 0805 4.7 mF 10% 805 TDK Corporation CGA4J3X7R1C475K125AB Yes COUT11, COUT12, COUT13, COUT21, COUT22, COUT31, COUT32 7 CAP CER 10 mF 10 V 10% X7R 1206 10 mF 10% 1206 Murata Electronics North America GCM31CR71A106KA64L Yes R1, R2 2 RES 0.0 W 1/10 W 0603 SMD 0W Jumper 603 Vishay/Dale CRCW06030000Z0EA Yes R3, R4, R5, R6, RFB2U, RFB3U 6 RES 10.0 kW 1/10 W 1% 0603 SMD 10.0 kW 1% 603 Vishay/Dale CRCW060310K0FKEA Yes R7 1 RES 0.0 W 1/4 W 1206 SMD 0W Jumper 1206 Vishay/Dale CRCW12060000Z0EA Yes RCOMP1 1 RES 12.4 kW 1/10 W 1% 0603 SMD 12.4 kW 1% 603 Vishay/Dale CRCW060312K4FKEA Yes RFB2L 1 RES 5.76 kW 1/10 W 1% 0603 SMD 5.76 kW 1% 603 Vishay/Dale CRCW06035K76FKEA Yes RSNB2, RSNB3 2 RES 10.0 W 1/10 W 1% 0603 SMD 10.0 W 1% 603 Vishay/Dale CRCW060310R0FKEA Yes D1 1 DIODE SCHOTTKY 4.0 A 40 V SMB 40 V/4.0 A N/A SMB_DIODE ON Semiconductor NRVB440MFST1G No http://onsemi.com 15 NCV97310MW33GEVB Table 4. BILL OF MATERIALS (continued) Manufacturer Manufacturer’s Part Number Substitution Allowed XAL4020-102ME Coilcraft XAL4020-102ME No 20% XAL4030-472ME Coilcraft XAL4030-472ME No 2.2 mH 20% XAL4020-222ME Coilcraft XAL4020-222ME No PIN INBOARD .042″ HOLE 1000/PKG N/A N/A TP Vector Electronics K24C/M Yes 8 CONN JACK BANANA UNINS PANEL MOU N/A N/A BANANA Emerson Network Power Connectivity Johnson 108-0740-001 No 4 CONN HEADER 2POS .100 VERT GOLD N/A N/A JMP Molex Connector Corporation 22-28-4023 Yes 4 CONN JUMPER SHORTING GOLD N/A N/A JMP Sullins Connector Solutions SSC02SYAN Yes COMP1, DRV1, FB2, FB3, RMIN, TP1, TP2, TP3, VIND 9 CIRCUIT PIN PRNTD .020″D .425″L Do Not Populate N/A SMALLTP Mill-Max Manufacturing Corp. 3128-2-00-15-00-00-08-0 Yes RDEPTH, RFB3L, RMOD, ROSC 4 U1 1 Reference Designator(s) Qty. Description Value Tolerance Footprint L0, L3 2 High Current Shielded Inductor 1.0 mH, 8.7 A SAT 1.0 mH 20% L1 1 High Current Shielded Inductor 4.7 mH, 4.5 A SAT 4.7 mH L2 1 High Current Shielded Inductor 2.2 mH, 5.6 A SAT EN, EN2, EN3, ERRB, GNDL, PGND1_1, PGND1_2, PGND2_1, PGND3_1, RST1B, RST2B, RST3B, STBYB, SW1, SW2, SW3, VIN2, VBAT, VOUT1_1, VOUT2_1, VOUT3_1 21 GND0, GND1, GND2, GND3, VBAT, VOUT1, VOUT2, VOUT3 J1, J2, J3, J4 Do Not Populate Automotive Battery-Connec ted Low IQ Multi-Output PMU N/A 603 N/A QFN32 Yes ON Semiconductor NCV97310MW33R2G No NOTE: All devices are RoHS Compliant. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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