hinT=00000.0000.0000.0000.0000--00000.1100.1100.0000.0000--00000.0000.0000.0000.0000---QDRII+_RL25 R1QAA36**CB* / R1QDA36**CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG R1QKA3636CBG / R1QKA3618CBG / R1QKA3609CBG 36-Mbit QDR™II+ SRAM 4-word Burst R10DS0158EJ0009 Rev. 0.09a 2011.09.14 Description The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. # = A: Read Latency =2.5, w/o ODT # = D: Read Latency =2.5, w/ ODT # = G: Read Latency =2.0, w/o ODT # = K: Read Latency =2.0, w/ ODT Features ႑ Power Supply • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock • Fast clock cycle time for high bandwidth • Two input clocks (K and /K) for precise DDR timing at clock rising edges only • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems • Clock-stop capability with Ps restart ႑ I/O • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR read and write operation • HSTL I/O • User programmable output impedance • DLL/PLL circuitry for wide output data valid window and future frequency scaling • Data valid pin (QVLD) to indicate valid data on the output ႑ Function • Four-tick burst for reduced address frequency • Internally self-timed write control • Simple control logic for easy depth expansion • JTAG 1149.1 compatible test access port ႑ Package • 165 FBGA package (15 x 17 x 1.4 mm) Notes: 1. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team) 2. The specifications of this device are subject to change without notice. Please contact your nearest Renesas Electronics Sales Office regarding specifications. 3. Refer to "http://www.renesas.com/products/memory/fast_sram/qdr_sram/qdr_sram_root.jsp" for the latest and detailed information. 4. Descriptions about x9 parts in this datasheet are just for reference. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 1 Common R1QAA36**CB* / R1QDA36**CB* Series Part Number Definition Part Number Definition Table No. Example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é᳸é +PFWUVTKCNVGOR 6CTCPIGé᳸é 2DHTGGCPF6TC[ 2DHTGGCPF6TC[ 2DHTGGCPF6CRG4GGN 2DHTGGCPF6CRG4GGN # $ 6 5 `#`< 4GPGUCUKPVGTPCNWUG QT0QPG 0QVG =?$$WTUVNGPIVJ $$WTUVNGPIVJ$$WTUVNGPIVJ =?.4GCF.CVGPE[ .4GCF.CVGPE[E[ENG.E[ENG.E[ENG =?5+15GRCTCVG+1 =?1&61PFKGVGTOKPCVKQP 0QVG 2CEMCIG/CTMKPI0COG 2DHTGGRCTVU/CTMKPI0COG2CTV0WODGT 2DHTGGRCTVU/CTMKPI0COG2CTV0WODGT 2$( 'ZCORNG43##4$)42D(2DHTGGRCTVU 'ZCORNG43##4$)42$(2DHTGGRCTVU 0QVG 0 R B 0 2DHTGG4Q*5%QORNKCPEG.GXGN 2DHTGG4Q*5%QORNKCPEG.GXGN Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 2 hinS=00000.0000.0000.0000.0000--11111.1111.1111.1111.1111--00000.0000.0000.0000.0000---036M R1QAA36**CB* / R1QDA36**CB* Series 36M QDR II+ / DDR II+ SRAM Lineup - Renesas supports or plans to support the parts listed below. No B2 2.5 QDRII+ B4 DDRII+ B4 Yes B2 2.5 QDRII+ B4 DDRII+ B4 No B2 2.0 QDRII+ B4 DDRII+ B4 B2 Yes QDRII+ B4 2.0 17 18 20 21 23 24 26 27 29 30 32 33 35 36 38 39 41 42 44 45 47 48 50 51 DDRII+ B4 Organization Burst Length Latency (Cycle) ODT No Product Type QDR II+ / DDR II+ x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 Frequency (max) (MHz) Cycle Time (min) (ns) Part NumberĄ yy ă R1Q A A36 18 C Bv- yy R1Q A A36 36 C Bv- yy R1Q B A36 18 C Bv- yy R1Q B A36 36 C Bv- yy R1Q C A36 18 C Bv- yy R1Q C A36 36 C Bv- yy R1Q D A36 18 C Bv- yy R1Q D A36 36 C Bv- yy R1Q E A36 18 C Bv- yy R1Q E A36 36 C Bv- yy R1Q F A36 18 C Bv- yy R1Q F A36 36 C Bv- yy R1Q G A36 18 C Bv- yy R1Q G A36 36 C Bv- yy R1Q H A36 18 C Bv- yy R1Q H A36 36 C Bv- yy R1Q J A36 18 C Bv- yy R1Q J A36 36 C Bv- yy R1Q K A36 18 C Bv- yy R1Q K A36 36 C Bv- yy R1Q L A36 18 C Bv- yy R1Q L A36 36 C Bv- yy R1Q M A36 18 C Bv- yy R1Q M A36 36 C Bv- yy 533 QDR II / DDR II 500 450 400 375 333 333 300 250 200 1.875 2.00 2.22 2.50 2.66 3.00 3.00 3.30 4.00 5.00 -25 -27 -30 -30 -33 -40 -50 -19 -20 -22 -19 -20 -22 -19 -20 -22 -19 -20 -22 -19 -20 -22 -19 -20 -22 -19 -20 -22 -25 -25 -25 -25 -25 -25 Notes: 1. "yy" represents the speed bin. "R1QAA3636CBG-20" can operate at 500 MHz(max) of frequency, for example. 2. "v" represents the package size. If "v" = "G" then size is 15 x 17 mm, and if "v" = "A" then 13 x 15 mm. 3. The part which is not listed above is not supported, as of the day when this datasheet was issued, in spite of the existence of the part number or datasheet. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 3 36--- R1QAA36**CB* / R1QDA36**CB* Series Pin Arrangement R1Q3A3636 (Top) / R1QA(G)A3636 (Mid) / R1QD(K)A3636 (Bottom) 1 2 3 4 5 6 7 8 9 10 11 A /CQ NC NC /W /BW2 /K /BW1 /R SA NC CQ B Q27 Q18 D18 SA /BW3 K /BW0 SA D17 Q17 Q8 C D27 Q28 D19 VSS SA NC SA VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H /DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS SA SA VSS Q10 D9 D1 P Q35 D35 Q26 SA SA SA Q9 D0 Q0 R TDO TCK SA SA SA SA SA TMS TDI SA C QVLD SA QVLD /C NC SA ODT (Top View) Top Mid Bottom ൸R1Q3A3636 ൸R1QA(G)A3636 ൸R1QD(K)A3636 Notes: 1. Address expansion order for future higher density SRAMs: 10A ൺ 2A ൺ 7A ൺ 5B. 2. NC pins can be left floating or connected to 0V ᨺ VDDQ. R1Q3A3618 (Top) / R1QA(G)A3618 (Mid) / R1QD(K)A3618 (Bottom) 1 2 3 4 5 6 7 8 9 10 11 A /CQ NC SA /W /BW1 /K NC /R SA NC CQ B NC Q9 D9 SA NC K /BW0 SA NC NC Q8 C NC NC D10 VSS SA NC SA VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 VDDQ VDD VSS VDD VDDQ NC NC Q5 NC D5 F NC Q12 D12 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC H /DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS SA SA VSS NC NC D1 P NC NC Q17 SA SA SA NC D0 Q0 R TDO TCK SA SA SA SA SA TMS TDI SA C QVLD SA QVLD /C NC SA ODT (Top View) Notes: 1. Address expansion order for future higher density SRAMs: 10A ൺ 2A ൺ 7A ൺ 5B. 2. NC pins can be left floating or connected to 0V ᨺ VDDQ. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 4 36--- R1QAA36**CB* / R1QDA36**CB* Series Pin Arrangement R1Q3A3609 (Top) / R1QA(G)A3609 (Mid) / R1QD(K)A3609 (Bottom) Just Reference 1 2 3 4 5 6 7 8 9 10 11 A /CQ NC SA /W NC /K NC /R SA SA CQ B NC NC NC SA NC K /BW SA NC NC Q4 C NC NC NC VSS SA NC SA VSS NC NC D4 D NC D5 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q5 VDDQ VSS VSS VSS VDDQ NC D3 Q3 VDDQ VDD VSS VDD VDDQ NC NC NC NC NC F NC NC NC G NC D6 Q6 VDDQ VDD VSS VDD VDDQ NC H /DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q2 D2 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q7 D7 VDDQ VSS VSS VSS VDDQ NC NC Q1 M NC NC NC VSS VSS VSS VSS VSS NC NC D1 NC SA NC SA NC VSS C QVLD D0 NC NC SA NC SA SA Q8 SA Q0 P QVLD /C NC TMS TDO TCK SA SA SA SA TDI SA SA R ODT (Top View) Notes: 1. Address expansion order for future higher density SRAMs: 10A ൺ 2A ൺ 7A ൺ 5B. 2. NC pins can be left floating or connected to 0V ᨺ VDDQ. N NC D8 Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 NC VSS SA PAGE : 5 hinS=11000.1100.1100.1100.1100 ---11000.1100.1100.1100.1100--11000.1100.1100.1100.1100--QDR R1QAA36**CB* / R1QDA36**CB* Series Pin Descriptions Name I/O type SA Input /R Input /W Input /BWx Input K, /K Input C, /C (II only) Input /DOFF Input TMS TDI Input TCK Input Descriptions Notes Synchronous address inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K. All transactions operate on a burst-of-four words (two clock periods of bus activity). These inputs are ignored when device is deselected. Synchronous read: When low, this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K, and is ignored on the subsequent rising edge of K. Synchronous write: When low, this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K, and is ignored on the subsequent rising edge of K. Synchronous byte writes: When low, these inputs cause their respective byte to be registered and written during WRITE cycles. These signals are sampled on the same edge as the corresponding data and must meet setup and hold times around the rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Byte Write Truth Table for signal to data relationship. Input clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. These balls cannot remain VREF level. Output clock: This clock pair provides a user-controlled means of tuning device output data. The rising edge of /C is used as the output timing reference for the first and third output data. The rising edge of C is used as the output timing reference for second and fourth output data. Ideally, 1 /C is 180 degrees out of phase with C. C and /C may be tied high to force the use of K and /K as the output reference clocks instead of having to provide C and /C clocks. If tied high, C and /C must remain high and not to be toggled during device operation. These balls cannot remain VREF level. DLL/PLL disable: When low, this input causes the DLL/PLL to be bypassed for stable, low frequency operation. IEEE1149.1 test inputs: 1.8 V I/O levels. These balls may be left not connected if the JTAG function is not used in the circuit. IEEE1149.1 clock input: 1.8 V I/O levels. This ball must be tied to VSS if the JTAG function is not used in the circuit. Notes: 1. R1Q2, R1Q3, R1Q4, R1Q5, R1Q6 series have C and /C pins. R1QA, R1QB, R1QC, R1QD, R1QE, R1QF, R1QG, R1QH, R1QJ, R1QK, R1QL, R1QM, R1QN, R1QP series do not have C, /C pins. In the series, K and /K are used as the output reference clocks instead of C and /C. Therefore, hereafter, C and /C represent K and /K in this document. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 6 --- R1QAA36**CB* / R1QDA36**CB* Series Name I/O type Descriptions Notes Output impedance matching input: This input is used to tune the device outputs to the system data bus impedance. Q and CQ output impedance are set to 0.2 u RQ, where RQ is a resistor from this ball to ground. This ball can be connected directly to VDDQ, which enables the ZQ Input minimum impedance mode. This ball cannot be connected directly to VSS or left unconnected. In ODT (On Die Termination) enable devices, the ODT termination values tracks the value of RQ. The ODT range is selected by ODT control input. ODT control: When low; [Option 1] Low range mode is selected. The impedance range is between 52 : and 105 : (Thevenin equivalent), which follows 0.3 u RQ for 175 : ื RQ ื 350 :. [Option 2] ODT is disabled. ODT Input 1 (II+ only) When high; High range mode is selected. The impedance range is between 105 : and 150 : (Thevenin equivalent), which follows 0.6 u RQ for 175 : ื RQ ื 250 :. When floating; [Option 1] High range mode is selected. [Option 2] ODT is disabled. Synchronous data inputs: Input data must meet setup and hold times around the rising edges of K and /K during WRITE operations. See Pin Arrangement figures for ball site location of individual signals. Input D0 to Dn The u9 device uses D0~D8. D9~D35 should be treated as NC pin. The u18 device uses D0~D17. D18~D35 should be treated as NC pin. The u36 device uses D0~D35. Synchronous echo clock outputs: The edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data CQ, /CQ Output valid indication. These signals run freely and do not stop when Q tristates. TDO Output IEEE 1149.1 test output: 1.8 V I/O level. Synchronous data outputs: Output data is synchronized to the respective C and /C, or to the respective K and /K if C and /C are tied high. This bus operates in response to /R commands. See Pin Q0 to Qn Output Arrangement figures for ball site location of individual signals. The u9 device uses Q0~Q8. Q9~Q35 should be treated as NC pin. The u18 device uses Q0~Q17. Q18~Q35 should be treated as NC pin. The u36 device uses Q0~Q35. QVLD Valid output indicator: The Q Valid indicates valid output data. QVLD is Output edge aligned with CQ and /CQ. (II+ only) Power supply: 1.8 V nominal. See DC Characteristics and Operating 2 Supply VDD Conditions for range. Power supply: Isolated output buffer supply. Nominally 1.5 V. See DC 2 Supply VDDQ Characteristics and Operating Conditions for range. 2 Supply Power supply: Ground. VSS HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to VREF improve system noise margin. Provides a reference voltage for the HSTL input buffers. NC No connect: These pins can be left floating or connected to 0V ᨺ VDDQ. Notes: 1. Renesas status: Option 1 = Available, Option 2 = Possible. 2. All power supply and ground balls must be connected for proper operation of the device. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 7 36--- R1QAA36**CB* / R1QDA36**CB* Series Block Diagram (R1QxA3636 / R1QxA3618 / R1QxA3609, x=3,A,D,G,K) 18/19/20 Address Address Registry and Logic 18/19/20 ZQ /R K /K K 72 /36 /18 144 /72 /36 Q (Data out) Output Select Output Buffer Memory Array 72 /36 /18 Output Register 72 Data /36 D 36/18/9 Registry /18 (Data in) and Logic Sense Amp /BWx Write Register 4/2/1 Write Driver /W MUX 72 /36 /18 MUX /R /W K /K 36/18/9 2 CQ /CQ C or K C,/C or K,/K Notes 1. C and /C pins do not exist in II+ series parts. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 8 hinS=11111.1111.1111.1111.1111--11111.1111.1111.1111.1111---00000.0000.0000.0000.0000--72M_36M R1QAA36**CB* / R1QDA36**CB* Series General Description Power-up and Initialization Sequence - VDD must be stable before K, /K clocks are applied. - Recommended voltage application sequence : VSS ൺ VDD ൺ VDDQ & VREF ൺ VIN. (0 V to VDD, VDDQ < 200 ms) - Apply VREF after VDDQ or at the same time as VDDQ. - Then execute either one of the following three sequences. 1. Single Clock Mode (C and /C tied high) - Drive /DOFF high (/DOFF can be tied high from the start). - Then provide stable clocks (K, /K) for at least 1024 cycles (II series) or 20 us (II+ series). These meet the QDR common specification of 20 us. When the operating is less 180 MHz, 2048 cycles are required (II series). 1. Single clock mode (C frequency and /C pins fixedthan High) Status Power Up & Unstable Stage NOP & Set-up Stage Normal Operation VDD VDDQ VREF Fix High (=Vddq) /DOFF SET-UP Cycle K, /K 2. Double Clock Mode (C and /C control outputs) (II series only) - Drive /DOFF high (/DOFF can be tied high from the start) - Then provide stable clocks (K, /K , C, /C) for at least 1024 cycles (II series). This meets the QDR common specification of 20 us. Whenclock the operating 2. Double mode frequency is less than 180 MHz, 2048 cycles are required (II series). Status Power Up & Unstable Stage NOP & Set-up Stage Normal Operation VDD VDDQ VREF Fix High (=Vddq) /DOFF SET-UP Cycle K, /K C, /C 3. DLL/PLL Off Mode (/DOFF tied low) - In the "NOP and setup stage", provide stable clocks (K, /K) for at least 1024 cycles (II series) or 20 us (II+ series). These meet the QDR common specification of 20 us. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 9 Common R1QAA36**CB* / R1QDA36**CB* Series DLL/PLL Constraints 1. DLL/PLL uses K clock as its synchronizing input. The input should have low phase jitter which is specified as tKC var. 2. The lower end of the frequency at which the DLL/PLL can operate is 120 MHz. (Please refer to AC Characteristics table for detail.) 3. When the operating frequency is changed or /DOFF level is changed, setup cycles are required again. Programmable Output Impedance 1. Output buffer impedance can be programmed by terminating the ZQ ball to VSS through a precision resistor (RQ). The value of RQ is five times the output impedance desired. The allowable range of RQ to guarantee impedance matching with a tolerance of 15% is 250 : typical. The total external capacitance of ZQ ball must be less than 7.5 pF. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 10 IIP R1QAA36**CB* / R1QDA36**CB* Series QVLD (Valid data indicator) (R1QA, R1QB, R1QC, R1QD, R1QE, R1QF, R1QG, R1QH, R1QJ, R1QK, R1QL, R1QM R1QN, R1QP series) 1. QVLD is provided on the QDR-II+ and DDR-II+ to simplify data capture on high speed systems. The Q Valid indicates valid output data. QVLD is activated half cycle before the read data for the receiver to be ready for capturing the data. QVLD is inactivated half cycle before the read finish for the receiver to stop capturing the data. QVLD is edge aligned with CQ and /CQ. ODT (On Die Termination) (R1QD, R1QE, R1QF, R1QK, R1QL, R1QM, R1QP series) 1. To reduce reflection which produces noise and lowers signal quality, the signals should be terminated, especially at high frequency. Renesas offers ODT on the input signals to QDR-II+ and DDR-II+ family of devices. (See the ODT pin table) 2. In ODT enable devices, the ODT termination values tracks the value of RQ. The ODT range is selected by ODT control input. (See the ODT range table) 3. In DDR-II+ devices having common I/O bus, ODT is automatically enabled when the device inputs data and disabled when the device outputs data. 4. There is no difference in AC timing characteristics between the SRAMs with ODT and SRAMs without ODT. 5. There is no increase in the IDD of SRAMs with ODT, however, there is an increase in the IDDQ (current consumption from the I/O voltage supply) with ODT. ODT range ODT control pin Thevenin equivalent resistance (RTHEV) Unit Notes Option 1 Option 2 - 6 Low 0.3 u RQ (ODT disable) : 1, 4 High 0.6 u RQ 0.6 u RQ : 2, 5 Floating 0.6 u RQ (ODT disable) : 3 Notes: 1. Allowable range of RQ for Option 1 to guarantee impedance matching a tolerance of r 20 % is 175 : ื RQ ื 350 :. 2. Allowable range of RQ to guarantee impedance matching a tolerance of r 20 % is 175 : ื RQ ื 250 :. 3. Allowable range of RQ for Option 1 to guarantee impedance matching a tolerance of r 20 % is 175 : ื RQ ื 250 :. 4. At option 1, ODT control pin is connected to VDDQ through 3.5 k:. Therefore it is recommended to connect it to VSS through less than 100 : to make it low. 5. At option 2, ODT control pin is connected to VSS through 3.5 k:. Therefore it is recommended to connect it to VDDQ through less than 100 : to make it high. 6. Renesas status: Option 1 = Available, Option 2 = Possible. If you need devices with option 2, please contact Renesas sales office. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 11 IIP R1QAA36**CB* / R1QDA36**CB* Series Thevenin termination SRAM with ODT Other LSI VDDQ ZQ 2 u RTHEV RQ Output Buffer 2 u RTHEV Input Buffer VSS VSS ODT pin (R1QD, R1QE, R1QF, R1QK, R1QL, R1QM, R1QP series) ODT On/Off timing Option 2 Pin name Option 1 D0 ~ Dn in separate I/O devices DQ0 ~ DQn in common I/O devices /BWx K, /K Notes: Notes ODT pin = High Always On Off: First Read Command + Read Latency - 0.5 cycle On: Last Read Command + Read Latency + BL/2 cycle + 0.5 cycle (See below timing chart) ODT pin = Low or Floating 3 Always Off 1 Always Off 2 Always On Always Off Always On Always Off 1. Separate I/O devices are R1QD, R1QK, R1QP series. 2. Common I/O devices are R1QE, R1QF, R1QL, R1QM series. 3. Renesas status: Option 1 = Available, Option 2 = Possible. If you need devices with option 2, please contact Renesas sales office. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 12 IIP R1QAA36**CB* / R1QDA36**CB* Series ODT on/off Timing Chart for R1QE series (DDR II+, Burst Length=2, Read Latency=2.5 cycle) Status Read Read Read Write Write Write Write Read Read NOP Read (B2) (B2) (B2) (B2) NOP NOP NOP (B2) (B2) (B2) (B2) (B2) (B2) K, /K Command Ra Rb Rc DQ DQ ODT Rd We Wf Qa Qa Qb Qb Qc Qc Qd Qd Wg Ri Rj De De Df Df Dg Dg Dh Dh Disabled Enabled Wh Qi Qi Qj Disabled Enabled ODT on/off Timing Chart for R1QF series (DDR II+, Burst Length=4, Read Latency=2.5 cycle) Status NOP Read (B4) Read (B4) - - NOP NOP NOP Write (B4) Write (B4) - Read (B4) - - K, /K Command Ra Rc DQ DQ ODT We Wg Qa Qa Qa Qa Qc Qc Qc Qc De De De De Dg Dg Dg Dg Disabled Enabled Ri Qi Qi Qi Disabled Enabled ODT on/off Timing Chart for R1QL series (DDR II+, Burst Length=2, Read Latency=2.0 cycle) Status Read Read Read Write Write Write Write Read Read Read NOP Read (B2) (B2) (B2) (B2) NOP NOP (B2) (B2) (B2) (B2) (B2) (B2) (B2) K, /K Command Ra Rb Rc DQ DQ ODT Rd We Qa Qa Qb Qb Qc Qc Qd Qd Wf Wg Ri Rj Rk De De Df Df Dg Dg Dh Dh Disabled Enabled Wh Qi Qi Qj Qj Qk Qk Enabled Disabled ODT on/off Timing Chart for R1QM series (DDR II+, Burst Length=4, Read Latency=2.0 cycle) Status NOP Read (B4) Read (B4) - - NOP NOP Write (B4) - Write (B4) - Read (B4) - Read (B4) K, /K Command Ra Rc DQ DQ ODT We Qa Qa Qa Qa Qc Qc Qc Qc Enabled Wg Ri De De De De Dg Dg Dg Dg Disabled Enabled Rk Qi Qi Qi Qi Qk Qk Disabled Notes 1. ODT on/off switching timings are edge aligned with CQ or /CQ. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 13 --- R1QAA36**CB* / R1QDA36**CB* Series K Truth Table Operation Write Cycle: Load address, input write data on two consecutive K and /K rising edges K /R /W D or Q Data in ൹ H*7 L*8 Input data D(A+0) Input clock K(t+1)൹ /K(t+1)൹ K(t+2)൹ /K(t+2)൹ D(A+1) D(A+2) D(A+3) Data out Read Cycle: Load address, output read data on two consecutive C and /C rising edges ൹ L*8 u NOP (No operation) ൹ H H D = u or Q = High-Z u u Standby (Clock stopped) Stopped Output data Q(A+0) Q(A+1) Q(A+2) Q(A+3) *9 Input RL =1.5 /C(t+1)൹ C(t+2)൹ /C(t+2)൹ C(t+3)൹ clock RL=2.0 C(t+2)൹ /C(t+2)൹ C(t+3)൹ /C(t+3)൹ for Q RL=2.5 /C(t+2)൹ C(t+3)൹ /C(t+3)൹ C(t+4)൹ Previous state Notes: 1. H: high level, L: low level, u: don’t care, ൹: rising edge. 2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges, except if C and /C are high, then data outputs are delivered at K and /K rising edges. 3. /R and /W must meet setup/hold times around the rising edges (low to high) of K and are registered at the rising edge of K. 4. This device contains circuitry that will ensure the outputs will be in high-Z during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. When clocks are stopped, the following cases are recommended; the case of K = low, /K = high, C = low and /C = high, or the case of K = high, /K = low, C = high and /C = low. This condition is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 7. If this signal was low to initiate the previous cycle, this signal becomes a “don’t care” for this operation; however, it is strongly recommended that this signal be brought high, as shown in the truth table. 8. This signal was high on previous K clock rising edge. Initiating consecutive READ or WRITE operations on consecutive K clock rising edges is not permitted. The device will ignore the second request. 9. RL = Read Latency (unit = cycle). Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 14 Common R1QAA36**CB* / R1QDA36**CB* Series Byte Write Truth Table ( x 36 ) Operation Write D0 to D35 Write D0 to D8 Write D9 to D17 Write D18 to D26 Write D27 to D35 Write nothing K /K /BW0 /BW1 /BW2 /BW3 ൹ - L L L L - ൹ L L L L ൹ - L H H H - ൹ L H H H ൹ - H L H H - ൹ H L H H ൹ - H H L H - ൹ H H L H ൹ - H H H L - ൹ H H H L ൹ - H H H H - ൹ H H H H Notes: 1. H: high level, L: low level, ൹: rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. Byte Write Truth Table ( x 18 ) Operation Write D0 to D17 Write D0 to D8 Write D9 to D17 Write nothing K /K /BW0 /BW1 ൹ - L L - ൹ L L ൹ - L H - ൹ L H ൹ - H L - ൹ H L ൹ - H H - ൹ H H Notes: 1. H: high level, L: low level, ൹: rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. Byte Write Truth Table ( x 9 ) Just Reference except R1Q2A7209 series Operation Write D0 to D8 Write nothing K /K /BW ൹ - L - ൹ L ൹ - H - ൹ H Notes: 1. H: high level, L: low level, ൹: rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 15 --- R1QAA36**CB* / R1QDA36**CB* Series Bus Cycle State Diagram /R = H & RCount = 4 /R = H Read Port NOP /R = L RInit = 0 Supply voltage provided Load New Always Read Double Read Address RCount RCount = 0 = R Count + 2 RInit = 1 /R = L & RCount = 4 RCount =2 Increment Read Address by Two*1 RInit = 0 Always Power Up Supply voltage provided Always Write Double Load New Write Port NOP Write Address WCount WCount = 0 = WCount + 2 /W = L /W = L RInit = 0 & WCount = 4 /W = H /W = H & WCount = 4 WCount =2 Always Increment Write Address by Two*1 Notes: 1. The address is concatenated with two additional internal LSBs to facilitate burst operation. The address order is always fixed as: xxx…xxx+0, xxx…xxx+1, xxx…xxx+2, xxx…xxx+3. Bus cycle is terminated at the end of this sequence (burst count = 4). 2. Read and write state machines can be active simultaneously. Read and write cannot be simultaneously initiated. Read takes precedence. 3. State machine control timing sequence is controlled by K. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 16 Common R1QAA36**CB* / R1QDA36**CB* Series Absolute Maximum Ratings Parameter Symbol Rating Unit Notes Input voltage on any ball VIN 0.5 to VDD + 0.5 (2.5 V max.) V 1, 4 Input/output voltage VI/O 0.5 to VDDQ + 0.5 (2.5 V max.) V 1, 4 Core supply voltage VDD 0.5 to 2.5 V 1, 4 Output supply voltage VDDQ 0.5 to VDD V 1, 4 Junction temperature Tj +125 (max) qC 5 Storage temperature TSTG 55 to +125 qC Notes: 1. All voltage is referenced to VSS. 2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted the Operation Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. 3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown in the tables after thermal equilibrium has been established. 4. The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN. Remember, according to the Absolute Maximum Ratings table, VDDQ is not to exceed 2.5 V, whatever the instantaneous value of VDDQ. 5. Some method of cooling or airflow should be considered in the system. (Especially for high frequency or ODT parts) Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Notes Power supply voltage -- core VDD 1.7 1.8 1.9 V 1 Power supply voltage -- I/O VDDQ 1.4 1.5 V 1, 2 Input reference voltage -- I/O VREF 0.68 0.75 VDD 0.95 V 3 Input high voltage VIH (DC) VREF + 0.1 VDDQ + 0.3 V 1, 4, 5 Input low voltage VIL (DC) 0.3 VREF 0.1 V 1, 4, 5 Notes: 1. At power-up, VDD and VDDQ are assumed to be a linear ramp from 0V to VDD(min.) or VDDQ(min.) within 200ms. During this time VDDQ < VDD and VIH < VDDQ. During normal operation, VDDQ must not exceed VDD. 2. Please pay attention to Tj not to exceed the temperature shown in the absolute maximum ratings table due to current from VDDQ. 3. Peak to peak AC component superimposed on VREF may not exceed 5% of VREF. 4. These are DC test criteria. The AC VIH / VIL levels are defined separately to measure timing parameters. 5. Overshoot: VIH (AC) d VDDQ + 0.5 V for t d tKHKH/2 Undershoot: VIL (AC) t 0.5 V for t d tKHKH/2 During normal operation, VIH(DC) must not exceed VDDQ and VIL(DC) must not be lower than VSS. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 17 hinS=00000.0000.0000.0000.0000--11111.1111.1111.1111.1111--00000.0000.0000.0000.0000---036M R1QAA36**CB* / R1QDA36**CB* Series DC Characteristics (Ta = 0 ~ +70qC @ R1Q*A*****BG-**R** series, Ta = -40 ~ +85qC @ R1Q*A*****BG-**I** series) (VDD = 1.8V r0.1V, VDDQ = 1.5V, VREF = 0.75V) Operating Supply Current (Write / Read) Symbol = IDD. Unit = mA. See Notes 1, 2 and 3 in the page after next. No B2 2.5 QDRII+ B4 DDRII+ B4 Yes B2 2.5 QDRII+ B4 DDRII+ B4 No Yes B2 2.0 QDRII+ B4 2.0 17 18 20 21 23 24 26 27 29 30 32 33 35 36 38 39 41 42 44 45 47 48 50 51 DDRII+ B4 QDRII+ B4 B2 DDRII+ B4 Organization Burst Length Latency (Cycle) ODT No Product Type QDR II+ / DDR II+ x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 Frequency (max) (MHz) Cycle Time (min) (ns) Part NumberĄ yy ă R1Q A A36 18 C Bv- yy R1Q A A36 36 C Bv- yy R1Q B A36 18 C Bv- yy R1Q B A36 36 C Bv- yy R1Q C A36 18 C Bv- yy R1Q C A36 36 C Bv- yy R1Q D A36 18 C Bv- yy R1Q D A36 36 C Bv- yy R1Q E A36 18 C Bv- yy R1Q E A36 36 C Bv- yy R1Q F A36 18 C Bv- yy R1Q F A36 36 C Bv- yy R1Q G A36 18 C Bv- yy R1Q G A36 36 C Bv- yy R1Q H A36 18 C Bv- yy R1Q H A36 36 C Bv- yy R1Q J A36 18 C Bv- yy R1Q J A36 36 C Bv- yy R1Q K A36 18 C Bv- yy R1Q K A36 36 C Bv- yy R1Q L A36 18 C Bv- yy R1Q L A36 36 C Bv- yy R1Q M A36 18 C Bv- yy R1Q M A36 36 C Bv- yy 533 QDR II / DDR II 500 450 400 375 333 333 300 250 200 1.875 2.00 2.22 2.50 2.66 3.00 3.00 3.30 4.00 5.00 -19 1220 1280 1030 1110 820 880 1220 1280 1030 1110 820 880 -22 -25 1070 1130 920 990 750 800 1070 1130 920 990 750 800 1070 980 1150 1060 920 850 990 910 750 710 800 760 1070 980 1150 1060 920 850 990 910 750 710 800 760 -27 -30 -30 -33 -40 -50 -20 1160 1220 990 1060 790 850 1160 1220 990 1060 790 850 Notes: 1. "yy" represents the speed bin. "R1QAA3636CBG-20" can operate at 500 MHz(max) of frequency, for example. 2. "v" represents the package size. If "v" = "G" then size is 15 x 17 mm, and if "v" = "A" then 13 x 15 mm. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 18 hinS=00000.0000.0000.0000.0000--11111.1111.1111.1111.1111--00000.0000.0000.0000.0000---036M R1QAA36**CB* / R1QDA36**CB* Series Standby Supply Current (NOP) Symbol = ISB1. Unit = mA. See Notes 2, 4 and 5 in the next page. 2.5 No Yes B2 2.5 QDRII+ B4 DDRII+ B4 QDRII+ B4 B2 DDRII+ B4 No Yes B2 2.0 QDRII+ B4 2.0 17 18 20 21 23 24 26 27 29 30 32 33 35 36 38 39 41 42 44 45 47 48 50 51 DDRII+ B4 QDRII+ B4 B2 DDRII+ B4 Organization Burst Length Latency (Cycle) ODT No Product Type QDR II+ / DDR II+ x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 x18 x36 Frequency (max) (MHz) Cycle Time (min) (ns) Part NumberĄ yy ă R1Q A A36 18 C Bv- yy R1Q A A36 36 C Bv- yy R1Q B A36 18 C Bv- yy R1Q B A36 36 C Bv- yy R1Q C A36 18 C Bv- yy R1Q C A36 36 C Bv- yy R1Q D A36 18 C Bv- yy R1Q D A36 36 C Bv- yy R1Q E A36 18 C Bv- yy R1Q E A36 36 C Bv- yy R1Q F A36 18 C Bv- yy R1Q F A36 36 C Bv- yy R1Q G A36 18 C Bv- yy R1Q G A36 36 C Bv- yy R1Q H A36 18 C Bv- yy R1Q H A36 36 C Bv- yy R1Q J A36 18 C Bv- yy R1Q J A36 36 C Bv- yy R1Q K A36 18 C Bv- yy R1Q K A36 36 C Bv- yy R1Q L A36 18 C Bv- yy R1Q L A36 36 C Bv- yy R1Q M A36 18 C Bv- yy R1Q M A36 36 C Bv- yy 533 QDR II / DDR II 500 450 400 375 333 333 300 250 200 1.875 2.00 2.22 2.50 2.66 3.00 3.00 3.30 4.00 5.00 -22 780 810 780 860 630 670 780 810 780 860 630 670 780 830 780 860 630 670 780 830 780 860 630 670 -25 -27 -30 -30 -33 -40 -50 -19 870 910 870 960 690 730 870 910 870 960 690 730 -20 830 870 840 920 660 710 830 870 840 920 660 710 720 770 720 790 590 630 720 770 720 790 590 630 Notes: 1. "yy" represents the speed bin. "R1QAA3636CBG-20" can operate at 500 MHz(max) of frequency, for example. 2. "v" represents the package size. If "v" = "G" then size is 15 x 17 mm, and if "v" = "A" then 13 x 15 mm. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 19 Common R1QAA36**CB* / R1QDA36**CB* Series Leakage Currents & Output Voltage Parameter Symbol Min Max Unit Input leakage current ILI 2 2 PA 10 Output leakage current ILO 5 5 PA 11 Output high voltage VOH (Low) VDDQ 0.2 VDDQ V |IOH| d 0.1 mA 8, 9 VOH VDDQ/2 0.12 VDDQ/2 0.12 V Note 6 8, 9 VOL (Low) VSS 0.2 V IOL d 0.1 mA 8, 9 VOL VDDQ/2 0.12 VDDQ/2 0.12 V Note 7 8, 9 Output low voltage Test condition Notes Notes: 1. All inputs (except ZQ, VREF) are held at either VIH or VIL. 2. IOUT = 0 mA. VDD = VDD max, tKHKH = tKHKH min. 3. Operating supply currents (IDD) are measured at 100% bus utilization. IDD of QDR family is current of device with 100% write and 100% read cycle. IDD of DDR family is current of device with 100% write cycle (if IDD(Write) > IDD(Read)) or 100% read cycle (if IDD(Write) < IDD(Read)). 4. All address / data inputs are static at either VIN > VIH or VIN < VIL. 5. Reference value. (Condition = NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed. ) 6. Outputs are impedance-controlled. |IOH| = (VDDQ/2)/(RQ/5) for values of 175 : d RQ d 350 :. 7. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 : d RQ d 350 :. 8. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 9. HSTL outputs meet JEDEC HSTL Class I and Class II standards. 10. 0 d VIN d VDDQ for all input balls (except VREF, ZQ, TCK, TMS, TDI ball). If R1QD, R1QE, R1QF, R1QK, R1QL, R1QM, R1QP series, balls with ODT do not follow this spec. 11. 0 d VOUT d VDDQ (except TDO ball), output disabled. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 20 Common R1QAA36**CB* / R1QDA36**CB* Series Thermal Resistance Parameter Symbol Airflow Typ Junction to Ambient ˥JA 1 m/s 11.0 Junction to Case ˥JC - 4.4 Unit Test condition Notes qC/W EIA/JEDEC JESD51 1 Notes: 1. These parameters are calculated under the condition. These are reference values. 2. Tj = Ta + ˥JA Pd Tj = Tc + ˥JC Pd where Tj : junction temperature when the device has achieved a steady-state after application of Pd (rC) Ta : ambient temperature (rC) Tc : temperature of external surface of the package or case (rC) ˥JA : thermal resistance from junction-to-ambient (rC/W) ˥JC : thermal resistance from junction-to-case (package) (rC/W) Pd : power dissipation that produced change in junction temperature (W) (cf.JESD51-2A) Capacitance (Ta = +25qC, Frequency = 1.0MHz, VDD = 1.8V, VDDQ = 1.5V) Parameter Symbol Min Typ Max Unit Test condition Notes Input capacitance (SA, /R, /W, /BW, D(separate)) CIN 4 5 pF VIN = 0 V 1, 2 Clock input capacitance (K, /K, C, /C) CCLK 4 5 pF VCLK = 0 V 1, 2 Output capacitance (Q(separate), DQ(common), CQ, /CQ) CI/O 5 6 pF VI/O = 0 V 1, 2 Notes: 1. These parameters are sampled and not 100% tested. 2. Except JTAG (TCK, TMS, TDI, TDO) pins. AC Test Conditions Input waveform (Rise/fall time d 0.3 ns) 1.25V 0.75V Test points 0.75V VDDQ/2 Test points VDDQ/2 0.25V Output waveform Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 21 Common R1QAA36**CB* / R1QDA36**CB* Series Output load conditions Output load and voltage conditions 1.8Vr0.1V VDDQ / 2 = 0.75V 1.5V VDD VDDQ VDDQ / 2 = 0.75V VREF 50: Z0 = 50: Q SRAM 250: ZQ VSS AC Operating Conditions Parameter Symbol Min Typ Max Unit Notes Input high voltage VIH (AC) VREF + 0.2 V 1, 2, 3, 4 Input low voltage VIL (AC) VREF – 0.2 V 1, 2, 3, 4 Notes: 1. All voltages referenced to VSS (GND). During normal operation, VDDQ must not exceed VDD. 2. These conditions are for AC functions only, not for AC parameter test. 3. Overshoot: VIH (AC) d VDDQ + 0.5 V for t d tKHKH/2 Undershoot: VIL (AC) t 0.5 V for t d tKHKH/2 Control input signals may not have pulse widths less than tKHKL (min) or operate at cycle rates less than tKHKH (min). 4. To maintain a valid level, the transitioning edge of the input must: a. Sustain a constant slew rate from the current AC level through the target AC level, VIL (AC) or VIH (AC). b. Reach at least the target AC level. c. After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC) or VIH (DC). Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 22 hinS=00000.0111.0111.0000.0000--00000.0111.0111.0000.0000--00000.0000.0000.0000.0000---RL=2.5 R1QAA36**CB* / R1QDA36**CB* Series AC Characteristics (Read Latency = 2.5 cycle) (Ta = 0 ~ +70qC @ R1Q*A*****BG-**R** series) (Ta = -40 ~ +85qC @ R1Q*A*****BG-**I** series) (VDD = 1.8V r0.1V, VDDQ = 1.5V, VREF = 0.75V) Parameter Symbol -19 Min -20 -22 -25 -27 -30 Unit Notes Max Min Max Min Max Min Max Min Max Min Max 2.00 4.00 2.22 4.00 2.50 4.00 2.66 4.00 3.00 4.00 ns Clock Average clock cycle time (K, /K) tKHKH 1.875 4.00 Clock high time (K, /K) tKHKL 0.40 0.40 0.40 0.40 0.40 0.40 Cycle Clock low time (K, /K) tKLKH 0.40 0.40 0.40 0.40 0.40 0.40 Cycle Clock to /clock (K to /K) tKH/KH 0.425 0.425 0.425 0.425 0.425 0.425 Cycle /Clock to clock (/K to K) t/KHKH 0.425 0.425 0.425 0.425 0.425 0.425 Cycle DLL/PLL Timing Clock phase jitter (K, /K) tKC var 0.15 0.15 0.15 0.20 0.20 0.20 ns 3 Lock time (K) tKC lock 20 20 20 20 20 20 us 2 K static to DLL/PLL reset tKC reset 30 30 30 30 30 30 ns 7 K, /K high to output valid tCHQV 0.45 0.45 0.45 0.45 0.45 0.45 ns K, /K high to output hold tCHQX 0.45 0.45 0.45 0.45 0.45 0.45 ns K, /K high to echo clock valid tCHCQV 0.45 0.45 0.45 0.45 0.45 0.45 ns K, /K high to echo clock hold tCHCQX 0.45 0.45 0.45 0.45 0.45 0.45 ns CQ, /CQ high to output valid tCQHQV 0.15 0.15 0.15 0.20 0.20 0.20 ns 4, 7 CQ, /CQ high to output hold tCQHQX 0.15 0.15 0.15 0.20 0.20 0.20 ns 4, 7 K, /K high to output high-Z tCHQZ 0.45 0.45 0.45 0.45 0.45 0.45 ns 5, 6 K, /K high to output low-Z tCHQX1 0.45 0.45 0.45 0.45 0.45 0.45 ns 5 CQ high to QVLD valid tQVLD 0.15 0.15 0.15 0.15 0.15 0.15 0.20 0.20 0.20 0.20 0.20 0.20 ns 7 Output Times Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 23 hinS=00000.0111.0111.0000.0000--00000.0111.0111.0000.0000--- 00000.0000.0000.0000.0000---RL=2.5 R1QAA36**CB* / R1QDA36**CB* Series Parameter Symbol -19 -20 -22 -25 -27 -30 Min Max Min Max Min Max Min Max Min Max Min Max Unit Notes Setup Times tAVKH Address valid to K rising edge (QDRII+ B2) tAVKH (QDRII+ B4 & DDRII+) Control inputs valid to K rising edge tIVKH (QDRII+ B2) tIVKH 0.30 0.33 0.40 0.40 0.40 0.40 0.30 0.33 0.40 0.40 0.40 0.40 tDVKH 0.20 0.22 0.25 0.28 0.28 0.28 tKHAX 0.30 0.33 0.40 0.40 0.40 0.40 0.30 0.33 0.40 0.40 0.40 0.40 0.20 0.22 0.25 0.28 0.28 0.28 (QDRII+ B4 & DDRII+) Data-in valid to K, /K rising edge ns 1, 8 ns 1, 8 ns 1, 9 ns 1, 8 ns 1, 8 ns 1, 9 Hold Times K rising edge to address hold (QDRII+ B2) tKHAX (QDRII+ B4 & DDRII+) K rising edge to control inputs hold tKHIX (QDRII+ B2) tKHIX (QDRII+ B4 & DDRII+) K, /K rising edge to data-in hold tKHDX Notes: 1. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold times for all latching clock edges. 2. VDD and VDDQ slew rate must be less than 0.1 V DC per 50 ns for DLL/PLL lock retention. DLL/PLL lock time begins once VDD , VDDQ and input clock are stable. It is recommended that the device is kept inactive during these cycles. This specification meets the QDR common spec. of 20 us. 3. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a r0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guardbands and test setup variations. 5. Transitions are measured r100 mV from steady-state voltage. 6. At any given voltage and temperature tCHQZ is less than tCHQX1 and tCHQV. 7. These parameters are sampled. 8. tAVKH, tIVKH, tKHAX, tKHIX spec is determined by the actual frequency regardless of Part Number (Marking Name). The following is the spec for the actual frequency. 0.30 ns for ื533MHz & >500MHz 0.33 ns for ื500MHz & >450MHz 0.40 ns for ื450MHz & ุ250MHz 9. tDVKH, tKHDX spec is determined by the actual frequency regardless of Part Number (Marking Name). The following is the spec for the actual frequency. 0.20 ns for ื533MHz & >500MHz 0.22 ns for ื500MHz & >450MHz 0.25 ns for ื450MHz & >400MHz 0.28 ns for ื400MHz & ุ250MHz Remarks: 1. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise noted. 2. Control input signals may not be operated with pulse widths less than tKHKL (min). 3. VDDQ is +1.5 V DC. VREF is +0.75 V DC. 4. Control signals are /R, /W (QDR series), /LD, R-/W (DDR series), /BW, /BW0, /BW1, /BW2 and /BW3. Setup and hold times of /BWx signals must be the same as those of Data-in signals. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 24 hinS=00000.0100.0100.0000.0000--00000.0100.0100.0000.0000---00000.0100.0100.0000.0000--- R R1QA_RL=2.5 R1QAA36**CB* / R1QDA36**CB* Series Timing Waveforms Read and Write Timing (QDRII+, B4, Read Latency = 2.5 cycle) 1 2 NOP 3 4 READ WRITE 5 READ 6 WRITE 7 NOP 8 NOP 9 NOP K tKHKL tKHKH tKH/KH tKLKH t/KHKH /K /R tIVKH tKHIX /W tIVKH Address A0 tAVKH A1 A2 tKHAX tKHIX A3 D10 D11 D12 D13 D30 D31 D32 D33 Data in tDVKH tKHDX Qx1 Qx2 Qx3 tDVKH tKHDX Q00 Q01 Q02 Q03 Q20 Q21 Q22 Q23 Data out tCHQZ -tCHQX1 tCHQV -tCHQX tCHQV -tCHQX tCQHQV -tCQHQX CQ tCHCQV -tCHCQX /CQ tCHCQV -tCHCQX QVLD tQVLD -tQVLD tQVLD -tQVLD Notes: 1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1. 2. Outputs are disabled (high-Z) N clock cycle after the last read cycle. Here, N = Read Latency + Burst Length u 0.5. 3. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11. Write data is forwarded immediately as read results. 4. To control read and write operations, /BW signals must operate at the same timing as Data-in signals. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 25 Common R1QAA36**CB* / R1QDA36**CB* Series JTAG Specification These products support a limited set of JTAG functions as in IEEE standard 1149.1. Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS are internally pulled up and may be unconnected, or may be connected to VDD through a pull up resistor. TDO should be left unconnected. Test Access Port (TAP) Pins Symbol I/O Pin assignments Description Notes TCK 2R Test clock input. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS 10R Test mode select. This is the command input for the TAP controller state machine. TDI 11R Test data input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. TDO 1R Test data output. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Notes: The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high for five rising edges of TCK. The TAP controller state is also reset on SRAM POWER-UP. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 26 Common R1QAA36**CB* / R1QDA36**CB* Series TAP DC Operating Characteristics (Ta = 0 ~ +70qC @ R1Q*A*****BG-**R** series) (Ta = -40 ~ +85qC @ R1Q*A*****BG-**I** series) (VDD = 1.8V r0.1V) Parameter Symbol Min Typ Max Unit Input high voltage VIH +1.3 VDD + 0.3 V Input low voltage VIL 0.3 0.5 V Input leakage current ILI 5.0 5.0 PA Output leakage current ILO 5.0 5.0 PA VOL1 0.2 V IOLC = 100 PA VOL2 0.4 V IOLT = 2 mA VOH1 1.6 V |IOHC| = 100 PA VOH2 1.4 V |IOHT| = 2 mA Output low voltage Output high voltage Notes 0 V d VIN d VDD 0 V d VIN d VDD, output disabled Notes: 1. All voltages referenced to VSS (GND). 2. At power-up, VDD and VDDQ are assumed to be a linear ramp from 0V to VDD(min.) or VDDQ(min.) within 200ms. During this time VDDQ < VDD and VIH < VDDQ. During normal operation, VDDQ must not exceed VDD. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 27 Common R1QAA36**CB* / R1QDA36**CB* Series TAP AC Test Conditions Parameter Symbol Conditions Unit Input timing measurement reference levels VREF 0.9 V Input pulse levels VIL, VIH tr, tf 0 to 1.8 V d 1.0 ns Output timing measurement reference levels 0.9 V Test load termination supply voltage (VTT) 0.9 V Output load See figures Input rise/fall time Notes Input waveform 1.8V 0.9V Test points 0.9V 0.9V Test points 0.9V 0V Output waveform Output load condition VTT = 0.9V DUT 50: TDO Z0 = 50: 20pF External Load at Test Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 28 Common R1QAA36**CB* / R1QDA36**CB* Series TAP AC Operating Characteristics (Ta = 0 ~ +70qC @ R1Q*A*****BG-**R** series) (Ta = -40 ~ +85qC @ R1Q*A*****BG-**I** series) (VDD = 1.8V r0.1V) Parameter Symbol Min Typ Max Unit Test clock (TCK) cycle time tTHTH 50 ns TCK high pulse width tTHTL 20 ns TCK low pulse width tTLTH 20 ns Test mode select (TMS) setup Notes tMVTH 5 ns TMS hold tTHMX 5 ns Capture setup tCS 5 ns 1 Capture hold tCH 5 ns 1 TDI valid to TCK high tDVTH 5 ns TCK high to TDI invalid tTHDX 5 ns TCK low to TDO unknown tTLQX 0 ns TCK low to TDO valid tTLQV 10 ns Notes: 1. tCS + tCH defines the minimum pause in RAM I/O pad transitions to assure pad data capture. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 29 Common R1QAA36**CB* / R1QDA36**CB* Series TAP Controller Timing Diagram tTHTH tTHTL tTLTH TCK tMVTH tTHMX TMS tDVTH tTHDX TDI tTLQV TDO tTLQX tCS tCH PI (SRAM) Test Access Port Registers Register name Length Symbol Instruction register 3 bits IR [2:0] Bypass register 1 bit BP ID register 32 bits ID [31:0] Boundary scan register 109 bits BS [109:1] Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 Notes PAGE : 30 Common R1QAA36**CB* / R1QDA36**CB* Series TAP Controller Instruction Set IR2 IR1 IR0 Instruction 0 0 0 0 Description Notes 0 EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary scan register cells at output balls are used to apply test vectors, while those at input balls capture test results. Typically, the first test vector to 1, 2, 3, 5 be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the Update-IR state of EXTEST, the output driver is turned on and the PRELOAD data is driven onto the output balls. 1 IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO balls in shiftDR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. 0 1 0 SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-Z), moving the TAP controller into the capture-DR state loads the 3, 4, 5 data in the RAMs input into the boundary scan register, and the boundary scan register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. 0 1 1 RESERVED The RESERVED instructions are not implemented but are reserved for future use. Do not use these instructions. 1 0 When the SAMPLE instruction is loaded in the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs input and I/O buffers into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP SAMPLE 0 3, 5 to attempt to capture the I/O ring contents while the input (/PRELOAD) buffers are in transition (i.e., in a metastable state). Although allowing the TAP to SAMPLE metastable input will not harm the device, repeatable results cannot be expected. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO balls. 1 0 1 RESERVED - 1 1 0 RESERVED - 1 1 1 BYPASS The BYPASS instruction is loaded in the instruction register when the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. Notes: 1. Data in output register is not guaranteed if EXTEST instruction is loaded. 2. After performing EXTEST, power-up conditions are required in order to return part to normal operation. 3. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. 4. Clock recovery initialization cycles are required after boundary scan. 5. For R1QD, R1QE, R1QF, R1QK, R1QL, R1QM, R1QP series, ODT is disabled in EXTEST, SAMPLE-Z or SAMPLE mode. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 31 36--- R1QAA36**CB* / R1QDA36**CB* Series Boundary Scan Order Bit # Ball ID Signal names x9 x18 x36 Bit # Ball ID Signal names x9 x18 x36 1 6R /C or NC or ODT /C or NC or ODT /C or NC or ODT 36 10E D3 D6 D6 2 6P C or QVLD C or QVLD C or QVLD 37 10D NC NC D15 3 6N SA SA SA 38 9E NC NC Q15 4 7P SA SA SA 39 10C NC Q7 Q7 5 7N SA SA SA 40 11D NC D7 D7 6 7R SA SA SA 41 9C NC NC D16 7 8R SA SA SA 42 9D NC NC Q16 8 8P SA SA SA 43 11B Q4 Q8 Q8 9 9R SA SA SA 44 11C D4 D8 D8 10 11P Q0 Q0 Q0 45 9B NC NC D17 11 10P D0 D0 D0 46 10B NC NC Q17 12 10N NC NC D9 47 11A CQ CQ CQ 13 9P NC NC Q9 48 10A SA NC NC 14 10M NC Q1 Q1 49 9A SA SA SA 15 11N NC D1 D1 50 8B SA SA SA 16 9M NC NC D10 51 7C SA SA SA 17 9N NC NC Q10 52 6C NC NC NC 18 11L Q1 Q2 Q2 53 8A /R /R /R 19 11M D1 D2 D2 54 7A NC NC /BW1 20 9L NC NC D11 55 7B /BW /BW0 /BW0 21 10L NC NC Q11 56 6B K K K 22 11K NC Q3 Q3 57 6A /K /K /K 23 10K NC D3 D3 58 5B NC NC /BW3 24 9J NC NC D12 59 5A NC /BW1 /BW2 25 9K NC NC Q12 60 4A /W /W /W 26 10J Q2 Q4 Q4 61 5C SA SA SA 27 11J D2 D4 D4 62 4B SA SA SA 28 11H ZQ ZQ ZQ 63 3A SA SA NC 29 10G NC NC D13 64 2A NC NC NC 30 9G NC NC Q13 65 1A /CQ /CQ /CQ 31 11F NC Q5 Q5 66 2B NC Q9 Q18 32 11G NC D5 D5 67 3B NC D9 D18 33 9F NC NC D14 68 1C NC NC D27 34 10F NC NC Q14 69 1B NC NC Q27 35 11E Q3 Q6 Q6 70 3D NC Q10 Q19 Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 32 --- R1QAA36**CB* / R1QDA36**CB* Series Boundary Scan Order Bit # Ball ID Signal names x9 x18 x36 D10 NC D19 NC NC D28 NC NC Q28 Q11 Q5 Q20 D11 D5 D20 NC NC D29 NC NC Q29 Q12 NC Q21 D12 NC D21 NC NC D30 NC NC Q30 Q13 Q6 Q22 D13 D6 D22 /DOFF /DOFF /DOFF NC NC D31 NC NC Q31 Q14 NC Q23 D14 NC D23 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 3C 1D 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1H 1J 2J 3K 3J 89 2K NC NC 90 1K NC NC Bit # Ball ID x9 Q7 D7 NC NC NC NC NC NC Q8 D8 NC NC SA SA SA SA SA SA Signal names x18 Q15 D15 NC NC Q16 D16 NC NC Q17 D17 NC NC SA SA SA SA SA SA x36 Q24 D24 D33 Q33 Q25 D25 D34 Q34 Q26 D26 D35 Q35 SA SA SA SA SA SA 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 2L 3L 1M 1L 3N 3M 1N 2M 3P 2N 2P 1P 3R 4R 4P 5P 5N 5R D32 109 INTERNAL INTERNAL INTERNAL Q32 Notes: In boundary scan mode, 1. Clock balls (K, /K, C, /C) are referenced to each other and must be at opposite logic levels for reliable operation. 2. CQ and /CQ data are synchronized to the respective C and /C (except EXTEST, SAMPLE-Z). 3. If C and /C tied high, CQ is generated with respect to K and /CQ is generated with respect to /K (except EXTEST, SAMPLE-Z). Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 33 Common R1QAA36**CB* / R1QDA36**CB* Series ID Register # Symbol Start bit (0) ă Ň Revision Type number Vendor JEDEC code number (28 : 12) 㸣 (11 : 1) (31 :29) 㸣 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 R R R 0 C M M M A W W 0 1 Q Q Q B O S 0 0 1 0 0 0 1 0 0 0 1 1 1 R R R 0 0 0 0 0 1 0 1 0 0 1 1 : Q Revison 0 II (QDR-II, DDR-II) 0 Revison 1 II+ (QDR-II+, DDR-II+) 1 Revison 2 Q Revison 3 DDR 0 : QDR 1 C Q Latency=1.5 (@II), Latency=2.0 (@II+) 0 36M&72M w/o ODT, 144M,288M 0 Latency=2.5 (@II+) 1 36M&72M w/ ODT 1 M M M B Density = 36Mb Burst Length = 2 word burst 0 1 0 0 Density = 72Mb Burst Length = 4 word burst 0 1 1 1 Density = 144Mb 1 0 1 O Density = 288Mb without ODT 1 1 0 0 with ODT A 1 0 144M&288M w/o ODT, 36M,72M S Common I/O 1 144M&288M w/ ODT 0 Separate I/O W W 1 x9 0 0 x18 1 0 x36 1 1 TAP Controller State Diagram 1 Test Logic Reset 0 Run Test/Idle 0 1 1 Select DR Scan 1 0 1 Capture DR Capture IR 1 Exit1 DR 0 Shift IR 1 1 Exit1 IR 0 0 Pause DR 1 Exit2 DR 1 0 Pause IR 0 1 Exit2 IR 1 1 Update DR 1 0 0 Shift DR 0 0 0 0 1 Select IR Scan 0 Update IR 1 0 Notes: The value adjacent to each state transition in this figure represents the signal present at TMS at the time of a rising edge at TCK. No matter what the original state of the controller, it will enter Test-Logic-Reset when TMS is held high for at least five rising edges of TCK. Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 34 hinS=11111.1111.1111.1111.1111--11111.1111.1111.1111.1111--00000.0000.0000.0000.0000---72M_36M R1QAA36**CB* / R1QDA36**CB* Series Package Dimensions and Marking Information Both Pb parts and Pb-free parts are available. JEITA Package Code P-LBGA165-15x17-1.00 Renesas Code PLBG0165FD-A Previous Code 165FHE D A Mass (typ.) 0.6 g B Top View R1QAA7236ABG-20R YWWXXXX JAPAN PB-F Index Mark (Laser Mark) This part number or mark is just one example. Marking Information 1st row : Vender name (RENESAS) 2nd row: Part number 3rd row : Y : Year code WW : Week code E XXXX : Renesas internal use 4th row : Country name (JAPAN) + "None" --- Pb-free parts + "PB-F" --- Pb-free parts S A Side View A1 - y S ZD [e] R Bottom View C D E F G H J K L M N P [e] A B ZE 1 2 3 4 5 6 Øb Index Mark Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 7 8 9 10 11 - Øx(M) S AB Reference Symbol D E A A1 [e] b x y ZD ZE Dimension in mm Min Nom Max 14.9 15.0 15.1 16.9 17.0 17.1 1.4 0.27 0.32 0.37 1.0 0.45 0.5 0.55 0.2 0.15 2.5 - 1.5 - PAGE : 35 hinS=11111.1111.1111.1111.1111--11111.1111.1111.1111.1111--00000.0000.0000.0000.0000---72M_36M R1QAA36**CB* / R1QDA36**CB* Series Revision History (1) 4GX &CVG 4GXC 4GXD Revision History 4GXE %QOOGPV +PKVKCNKUUWG %QTTGEVGFV[RQUKP&%%JCTCEVGTKUVKEU81*81.8&&3dăd #FFGF5RGGF$KP6CDNG #FFGF1&6VKOKPIEJCTVVQ3&4++CPF&&4++UGTKGU %QTTGEVGFV[RQUKP)GPGTCN&GUETKRVKQP1&6RKP3᳸3Pă&᳸&P 7RFCVGF4GEQOOGPFGF&%1RGTCVKPI%QPFKVKQPU8TGH᳸8ă᳸ 8 ++UGTKGU Description #FFGFEQOOGPVVQ6JGTOCN4GUKUVCPEGUGEVKQP6JGUGCTGTGHGTGPEGXCNWGU #FFGF)GPGTCVKQP0WODGT6CDNG %JCPIGF/CTMKPI0COGKP2CTV0WODGT&GHKPKVKQP6CDNG #FFGFOCTMKPIKPHQTOCVKQPVQ2CEMCIG&KOGPUKQP+PHQTOCVKQPUGEVKQP %QTTGEVGF1&61P1HHVKOKPIKP1&6RKPVCDNG 7RFCVGFOKPKOWOHTGSWGPE[QH3&4++CPF&&4++UGTKGU %JCPIGFRKPPCOGKP2KP#TTCPIGOGPVQH&&4++UGTKGU5#5#ă0% #FFGFVJGTQYVQ-6TWVJ6CDNG4.CPF4. 7RFCVGF5'672E[ENGU++UGTKGU&..NQEMVKOGWUăE[ENG #FFGFEQOOGPVVQ1&6QPQHH6KOKPI%JCTVUGEVKQP1&6QPQHHUYKVEJKPI VKOKPIUCTGGFIGCNKIPGFYKVJ%3QT%3 7RFCVGF6JGTOCN4GUKUVCPEG #FFGFURGGFDKPVQ3&4++$ZZUGTKGU 7RFCVGF2CEMCIG&KOGPUKQPU/CUUăI# OCZă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d8ă8᳸8FF #FFGF0QVGCPF0QVGVQ#%%JCTCEVGTKUVKEUVCDNGHQT++UGTKGU 7RFCVGF5RGGF$KP6CDNGHQT/ #FFGF0QVGVQ)GPGTCVKQP0WODGT6CDNG 7RFCVGF5RGGF$KP6CDNGHQT/CPF/ 7RFCVGF1RGTCVKPI5WRRN[%WTTGPVCPF5VCPFD[5WRRN[%WTTGPV6CDNGHQT/ CPF/ %JCPIGF+PKVKCNK\CVKQP5GSWGPEG+PKVKCNE[ENGQH++UGTKGUE[ENGU ăWU #FFGF0QVGVQ#%%JCTCEVGTKUVKEUVCDNGHQT++UGTKGU 7RFCVGF#%%JCTCEVGTKUVKEUHQTVJGUGTKGUQH4. 7RFCVGF5RGGF$KP6CDNGHQT/// #FFGF430#432#UGTKGUVQ/3&4NKPGWR %JCPIGF,6#)+&4GIKUVGT +&%QFG //YQ1&6// //Y1&6 //YQ1&6// //Y1&6 ă /ă / 4GXF Rev. Date 4GXG 4GX᳠ 4GXI 4GXJ 4GXK 4GXC 4GXC 4GXC 4GXC 4GXC 4GXD 4GXE 4GXC 4GXC 4GXD Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 36 hinS=11111.1111.1111.1111.1111--11111.1111.1111.1111.1111--00000.0000.0000.0000.0000---72M_36M R1QAA36**CB* / R1QDA36**CB* Series Revision History (2) 4GX &CVG 4GXC 4GXD 4GXC %QOOGPV #FFGF0QVGVQV38.&KP#%%JCTCEVGTKUVKEUVCDNGHQT++UGTKGU %JCPIGFFGUETKRVKQPQHV38.&KP#%%JCTCEVGTKUVKEUVCDNGHQT4.UGTKGU %3JKIJVQ38.&XCNKFă%3JKIJVQ38.&XCNKF 7RFCVGF4GOCTMUQH#%%JCTCEVGTKUVKEUVCDNG 7RFCVGFV-*-* OCZKP#%%JCTCEVGTKUVKEUVCDNGHQT3&4++$UGTKGU #FFGFZOORCEMCIGNKPGWRVQ/++/++++UGTKGU 7RFCVGF2CEMCIG&KOGPUKQPUHQTZOORCEMCIG 7RFCVGF6JGTOCN4GUKUVCPEGHQTZOORCEMCIG %JCPIGF6KVNG1TFGTKPI+PHQTOCKQPă2CTV0WODGT&GHKPKVKQPŴ5RGGF $KP6CDNGă4GPGUCU/3&4&&454#/.KPGWR 7RFCVGF5RGEKHKECVKQPHQT1&61RVKQP Rev. 0.09a : 2011.09.14 R10DS0158EJ0009 PAGE : 37 Common R1QAA36**CB* / R1QDA36**CB* Series Renesas Electronics Corporation Headquarters: Nippon Bldg., 2-6-2, Ote-machi, Chiyoda-ku, Tokyo 100-0004, Japan NOTES: 1. 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Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Electronics Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. Renesas Sales Offices http://www.renesas.com Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C. Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 --© 2011 Renesas Electronics Corporation. All rights reserved. Rev. 0.09a : 2011.09.14 PAGE : 38