Preliminary Datasheet RJP65S04DWT/RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) Outline Die: RJP65S04DWT-80 Wafer: RJP65S04DWA-80 2 C 2 3 1G 1 E 3 3 1. Gate 2. Collector (The back) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 100 50 150 Unit V V A A C Notes: 1. This data is a regulated value in evaluation package. R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Page 1 of 3 RJP65S04DWT/RJP65S04DWA Preliminary Electrical Characteristics (These data are an actual measurement value in evaluation package.) (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Short circuit withstand time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min — — 5.0 — — — — — — — — Typ — — — 1.60 4.5 0.2 0.15 30 30 200 80 Max 1 ±1 6.8 1.95 — — — — — — — Unit A A V V nF nF nF ns ns ns ns Test Conditions VCE = 650 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1.0mA IC = 50 A, VGE = 15 V Note2 tsc 10 — — s VCC 360 V , VGE = 15 V Tj = 150 C VCE = 25 V VGE = 0 f = 1 MHz Note3 VCC = 300 V IC = 50 A VGE =±15 V Rg = 10 , Tj = 125 C Inductive load Notes: 2. Pulse test. 3. Switching time test circuit and waveform are shown below. Switching Time Test Circuit Waveform VGE 90% Diode clamp 10% L VCC IC 90% D.U.T 90% Rg 10% 10% td(off) R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 tf td(on) tr Page 2 of 3 RJP65S04DWT/RJP65S04DWA Preliminary Die Dimension Emitter bonding pad (1) 2.06 Emitter bonding pad (2) 2.06 0.81 3.19 Gate bonding pad 1.63 5.9 1.63 1.31 4.55 Unit: mm 5.9 Note 1. Illustration Definition Part of white Al pattern Part of dotted line Bonding area Part of gray Final passivation Note 2. The back of the chip is processed with Au evaporation. Note 3. Recognition, target and any other patterns which are not related to Diode operation, may be changed without notice. Ordering Information Orderable Part Number RJP65S04DWA-80#W0 RJP65S04DWT-80#X0 R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Page 3 of 3 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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