8.0kV 5mA HIGH VOLTAGE DIODES

HVGT
JB08
8.0kV 5mA HIGH VOLTAGE DIODES
Outline Drawings : mm
JB08 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
DO-205
Cathode Mark
Lot No.
o 2.0
Features
o 0.5
High speed switching
High Current
High surge resisitivity for CRT discharge
31 min.
4.8
31 min.
High reliability design
High Voltage
Cathode Mark
Applications
X light Power supply
Type
Mark
Laser
Voltage doubler circuit
>>>>
Microwave emission power
JB08
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Symbols
Condition
V RRM
JB08
Units
8.0
kV
5.0
mApeak
I FSM
0.5
A peak
Junction Temperature
Tj
120
°C
Allowable Operation Case Temperature
Tc
120
°C
Storage Temperature
Tstg
-40 to +120
°C
Conditions
JB08
Units
Average Output Current
Suege Current
IO
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
25
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
2.0
uA
IR2
at 100°C,V R =VRRM
5.0
uA
Maximum Reverse Recovery Time
Trr
at 25°C
100
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
1.0
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:[email protected]
2014