HVGT JB99 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. JB99 DO-415 Cathode Mark Lot No. o 4.2 Features o 0.8 High speed switching High Current High surge resisitivity for CRT discharge 25 min. 15 25 min. High reliability design High Voltage Cathode Mark Applications X light Power supply Type Mark JB99 HVGT JB99 Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition JB99 Units 20 kV 20 mA I FSM 1.5 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load -40 to +125 °C Conditions JB99 Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 40 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 3.0 uA IR2 at 100°C,V R =VRRM 30 uA Maximum Reverse Recovery Time Trr at 25°C 100 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 1.0 pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014