HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying REJ03G0617-0200 (Previous: ADE-208-491A) Rev.2.00 May 10, 2005 Features • Low forward voltage drop and suitable for high efficiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Name HRB0103B E2 CMPAK Pin Arrangement 3 2 1 (Top View) Rev.2.00 May 10, 2005 page 1 of 5 1. Cathode 2. Anode 3. Cathode Anode Package Code (Previous Code) PTSP0003ZB-A (CMPAK) HRB0103B Absolute Maximum Ratings *1 (Ta = 25°C) Item Repetitive peak reverse voltage Symbol VRRM Average rectified current Non-Repetitive peak forward surge current I O* 3 IFSM * Junction temperature Storage temperature Tj Tstg Value 30 Unit V 100 3 mA A 125 −55 to +125 °C °C 2 Notes: 1. Per one device. 2. See Fig.5, Two device total. 3. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF Reverse current IR Rev.2.00 May 10, 2005 page 2 of 5 Min — Typ — Max 0.44 Unit V — — 50 µA Test Condition IF = 100 mA VR = 30 V HRB0103B Main Characteristic 10–2 10–2 Pulse test Pulse test 10–3 10–4 Reverse current IR (A) Forward current IF (A) 10–3 10–5 10–6 10–7 10–4 10–5 10–6 10–9 0 0.1 0.3 0.4 10–7 0.5 0 10 20 30 40 50 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 2.0 sin wave D=1/3 0.05 1.5 D=1/2 Unit: mm DC 0.04 0.03 0.02 Io 0 tp 0.01 0 T 0 20 40 60 80 D= tp T 100 120 0.07 DC 0.8 0.8 3.0 0.06 20h×15w×0.8t 0.06 D=5/6 2.0 D=1/6 0.07 VR is two device total 0.08 20h×15w×0.8t 3.0 0.08 Forward power dissipation Pd (W) 0.2 Reverse power dissipation Pd (W) 10 –8 0.05 1.5 Unit: mm D=2/3 0 0.04 VR D=1/2 tp T 0.03 D= tp T sin wave 0.02 0.01 0 0 5 10 15 20 25 30 Average rectified current Io (mA) Peak reverse voltage VRM (V) Fig3. Forward power dissipation vs. Average rectified current Fig4. Forward power dissipation vs. Peak reverse voltage Rev.2.00 May 10, 2005 page 3 of 5 HRB0103B Two device total 100 DC 80 D=1/6 D=1/3 60 40 1.5 0 1.5 20 0.8 20hx15wx0.8t 3.0 Average rectified current IO (mA) 120 sin wave D=1/2 1.5 0 Unit: mm 0 25 50 75 T D= VR = 30V 100 125 150 Ambient temperature Ta (°C) Fig.5 Average rectified current vs. Ambient temperature Rev.2.00 May 10, 2005 page 4 of 5 Io tp tp T HRB0103B Package Dimensions JEITA Package Code RENESAS Code SC-70 Previous Code PTSP0003ZB-A CMPAK / CMPAKV MASS[Typ.] 0.006g D e Q c HE E L A A b e Reference A2 Symbol A A1 e1 b l1 c A — A Section b2 Pattern of terminal position areas Rev.2.00 May 10, 2005 page 5 of 5 A A1 A2 b c D E e HE L b2 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 - Nom 0.9 0.3 0.16 2.0 1.25 0.65 2.1 0.425 1.5 0.2 Max 1.1 0.1 1.0 0.4 0.26 2.2 1.35 2.4 0.45 0.9 - Sales Strategic Planning Div. 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