HSM122 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G1299-0100 Rev.1.00 Oct 27, 2005 Features • High reverse voltage. (VR = 400 V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM122 Laser Mark F8 Package Name MPAK Pin Arrangement 3 2 1 (Top View) Rev.1.00 Oct 27, 2005 page 1 of 4 1. NC 2. Anode 3. Cathode Package Code (Previous Code) PLSP0003ZC-A (MPAK) HSM122 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Peak reverse voltage VRM 420 Reverse voltage VR 400 Peak forward current IFM 625 Non-Repetitive peak forward surge current IFSM *1 1 Average rectified current IO 150 Power dissipation Pd *2 150 Junction temperature Tj 125 Storage temperature Tstg −55 to +125 Notes: 1. Value at duration of 1s. 2. Standard substrate mounting (20mm × 15mm × 0.8t mm, With Polyimide board) Unit V V mA A mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF Reverse current Capacitance Reverse recovery time IR C trr Rev.1.00 Oct 27, 2005 page 2 of 4 Min — Typ — Max 1.2 Unit V — — — — — — 1.0 10 20 µA pF µs Test Condition IF = 100 mA VR = 400 V VR = 0 V, f = 1 MHz IF = 30 mA, VR = 10 V, RL = 2 kΩ HSM122 Main Characteristic Forward current IF (A) 1.0 10−1 10−2 10−3 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2 Fig.1 Forward current vs. Forward voltage 10−8 Reverse current IR (A) 10−9 10−10 10−11 10−12 10−13 0 100 200 300 400 500 Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage Rev.1.00 Oct 27, 2005 page 3 of 4 HSM122 Package Dimensions JEITA Package Code RENESAS Code SC-59A PLSP0003ZC-A Previous Code MASS[Typ.] MPAK(D) / MPAK(D)V 0.011g D Q c e E HE L A A b e Reference Symbol A e1 A1 b l1 c b2 A — A Section Rev.1.00 Oct 27, 2005 page 4 of 4 Pattern of terminal position areas A A1 b c D E e HE L b2 e1 l1 Q Dimension in Millimeters Min 1.0 0 0.35 0.1 2.7 1.35 2.2 - Nom 0.4 0.16 1.5 0.95 2.8 0.65 1.95 0.3 Max 1.3 0.1 0.5 0.26 3.1 1.65 3.0 0.55 1.05 - Sales Strategic Planning Div. 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