RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package (TSSOP-8) VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>) 4 5 3 2 1 8 1, 2, 3, 4 : Collector 5, 6, 7 : Emitter 8 : Gate 4 1 5 6 7 8 Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Symbol VCES VGES VGEM ICM Ratings 400 ±6 ±8 150 Unit V V V A Tj Tstg – 40 to +150 – 40 to +150 °C °C Junction temperature Storage temperature Rev.1.00 Oct 13, 2006 page 1 of 4 Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) RJP4003ASA Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 — — 0.5 — — Typ. — — — 0.7 5.0 5000 Max. — 10 ±10 1.5 10.0 — Unit V µA µA V V pF Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Applications) Pulse Collector Current ICM (A) 200 TC = 70°C CM = 400 µF RG = 68 Ω 150 100 50 0 0 2 4 6 Gate - Emitter Voltage VGE (V) Rev.1.00 Oct 13, 2006 page 2 of 4 8 Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 4 V VCE = 25 V, VGE = 10 V, f = 1MHz RJP4003ASA Application Example VCM Trigger Transformer CM 4 + – 3 2 1 IGBT driver RD5CYD08 RD5CYDT08 5 VCM Xe Tube 6 7 8 Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V ICP 130 A 150 A CM 330 µF 400 µF VGE 5V 4V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 68 Ω, it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor (CM = 400 µF). Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V. Rev.1.00 Oct 13, 2006 page 3 of 4 RJP4003ASA Package Dimensions Package Name TSSOP-8 JEITA Package Code P-TSSOP8-4.4 × 3-0.65 RENESAS Code PTSP0008JB-B Previous Code TTP-8DV MASS[Typ.] 0.034g F *1 D 8 5 c Index mark HE *2 E bp 1 4 Z Terminal cross section *3 bp (Ni/Pd/Au plating) x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol A1 A L1 L y Detail F D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Dimension in Millimeters Min Nom Max 3.00 3.30 4.40 0.03 0.07 0.10 1.10 0.15 0.20 0.25 0.10 0.15 0.20 0° 8° 6.20 6.40 6.60 0.65 0.13 0.10 0.805 0.40 0.50 0.60 1.0 Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – 00 – Q0 Note: Please confirm the specification about the shipping in detail. Rev.1.00 Oct 13, 2006 page 4 of 4 Standard order code example RJP4003ASA-0-Q0 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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