RENESAS RJP4003ASA-0-Q0

RJP4003ASA
Nch IGBT for Strobe Flash
REJ03G1475-0100
Rev.1.00
Oct 13, 2006
Features
•
•
•
•
Small surface mount package (TSSOP-8)
VCES : 400 V
ICM : 150 A
Drive voltage : 4 V
Outline
RENESAS Package code: PTSP0008JB-B
(Package name: TSSOP-8 <TTP-8DV>)
4
5
3
2
1
8
1, 2, 3, 4 : Collector
5, 6, 7 : Emitter
8 : Gate
4
1
5
6
7
8
Applications
Strobe flash for cameras
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulse)
Symbol
VCES
VGES
VGEM
ICM
Ratings
400
±6
±8
150
Unit
V
V
V
A
Tj
Tstg
– 40 to +150
– 40 to +150
°C
°C
Junction temperature
Storage temperature
Rev.1.00
Oct 13, 2006
page 1 of 4
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
RJP4003ASA
Electrical Characteristics
(Tj = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
450
—
—
0.5
—
—
Typ.
—
—
—
0.7
5.0
5000
Max.
—
10
±10
1.5
10.0
—
Unit
V
µA
µA
V
V
pF
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flash Applications)
Pulse Collector Current ICM (A)
200
TC = 70°C
CM = 400 µF
RG = 68 Ω
150
100
50
0
0
2
4
6
Gate - Emitter Voltage VGE (V)
Rev.1.00
Oct 13, 2006
page 2 of 4
8
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 4 V
VCE = 25 V, VGE = 10 V,
f = 1MHz
RJP4003ASA
Application Example
VCM
Trigger Transformer
CM
4
+
–
3
2
1
IGBT driver
RD5CYD08
RD5CYDT08
5
VCM
Xe Tube
6
7
8
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
ICP
130 A
150 A
CM
330 µF
400 µF
VGE
5V
4V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 68 Ω, it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor (CM = 400 µF). Repetition period under full luminescence
condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Rev.1.00
Oct 13, 2006
page 3 of 4
RJP4003ASA
Package Dimensions
Package Name
TSSOP-8
JEITA Package Code
P-TSSOP8-4.4 × 3-0.65
RENESAS Code
PTSP0008JB-B
Previous Code
TTP-8DV
MASS[Typ.]
0.034g
F
*1 D
8
5
c
Index mark
HE
*2 E
bp
1
4
Z
Terminal cross section
*3 bp
(Ni/Pd/Au plating)
x M
e
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference
Symbol
A1
A
L1
L
y
Detail F
D
E
A2
A1
A
bp
b1
c
c1
HE
e
x
y
Z
L
L1
Dimension in Millimeters
Min
Nom Max
3.00 3.30
4.40
0.03 0.07 0.10
1.10
0.15 0.20 0.25
0.10 0.15
0.20
0°
8°
6.20 6.40 6.60
0.65
0.13
0.10
0.805
0.40 0.50 0.60
1.0
Order Code
Lead form
Standard packing
Quantity
Standard order code
Surface-mounted type
Taping
3000 Type name – 00 – Q0
Note: Please confirm the specification about the shipping in detail.
Rev.1.00
Oct 13, 2006
page 4 of 4
Standard order code
example
RJP4003ASA-0-Q0
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Colophon .7.0