MSF7N65 650V N-Channel MOSFET

MSF7N65 650V N-Channel MOSFET
GENERAL DESCRIPTION
The MSF7N65 is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The TO-220F package is
universally preferred for all commercial-industrial applications
FEATURES
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant / Halogen free package available
Symbol
Parameter
Value
Units
VDSS
Drain to Source Voltage
650
V
VGS
Gate to Source Voltage
±30
V
Continuous Drain Current(@TC = 25 °C)
7.0
A
Continuous Drain Current(@TC = 100 °C)
4.2
A
IDM
Drain Current Pulsed
28
A
EAS
Single Pulsed Avalanche Energy
230
mJ
IAR
Avalanche Current
7.0
A
EAR
Repetitive Avalanche Energy
14.7
mJ
Peak Diode Recovery dv/dt
4.5
V/ns
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
300
°C
260
°C
48
W
0.38
W/°C
-55 ~ 150
°C
150
°C
ID
dv/dt
TL
from case for 10 seconds
TPKG
Maximum Temperature for Soldering @ Package Body for 10
seconds
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
TSTG
TJ
Operating Junction Temperature
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C.
3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C.
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
-
-
2.6
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V,
650
-
-
V
-
0.70
-
V/°C
2.0
-
4.0
V
-
-
1
uA
-
-
10
uA
ID = 250 uA
ΔBVDSS/
ΔTJ
VGS(th)
Breakdown Voltage Temperature
ID = 250 uA, referenced to 25
coefficient
°C
Gate Threshold Voltage
VDS = VGS,
ID = 250 uA
IDSS
Drain-Source Leakage Current
VDS = 650 V,
VGS = 0 V
VDS = 520 V,
TC = 125 °C
IGSS
RDS(ON)
Gate-Source Leakage, Forward
VGS=±30
-
-
±100
nA
Static Drain-Source On-state
VGS = 10 V,
-
1.2
1.4
Ω
Resistance
ID = 3.5 A
-
29
-
-
4.7
-
-
12.5
-
ID=7A,
-
20
-
VDD=325V,
-
50
-
Turn-off Delay Time
VGS=10V
-
80
-
Fall Time
RG=10Ω
-
70
-
-
1482
-
Dynamic Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge (Miller
Charge)
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ID=7A,
VDD=520V,
VGS=10V
VGS=0V, VDS=25V, f=1MHz
-
121.7
-
-
14
-
nC
ns
pF
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Source-Drain Diode
VSD
IS=7.0A, VGS=0V
-
-
1.4
V
IS
VD=VG=0,
-
-
7.0
A
ISM
VS=1.3V
-
-
28
A
-
350
-
ns
-
3.3
-
uC
trr
Qrr
VGS=0, IF=7A, dI/dt=100A/us
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
•
Characteristic Curves
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs Drain Current
Figure 4. Body Diode Forward Voltage Variation with
and Gate Voltage
Source Current and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
•
Characteristic Curves
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On-Resistance Variation vs.
Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
Figure 11. Transient Thermal Response Curve
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
Package Dimensions
Dimensions in Millimeters
©Bruckewell Technology Corporation Rev. A -2012
MSF7N65 650V N-Channel MOSFET
Legal Disclaimer Notice
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(i)
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(ii)
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the customer’s responsibility to validate that a particular product with the properties described in the product
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including but not limited to the warranty expressed therein.
©Bruckewell Technology Corporation Rev. A -2012