CYSTEKEC MTN8N65FP

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN8N65FP
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 1/9
BVDSS : 700V @Tj=150℃
RDS(ON) : 0.95Ω(typ.)
ID : 7.5A
Description
The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• BVDSS=700V typically @ Tj=150℃
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
MTN8N65FP
G:Gate
D:Drain
S:Source
MTN8N65FP
TO-220FP
G D S
CYStek Product Specification
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
650
±30
7.5*
4.5*
30*
213
7.5
16
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
Tj, Tstg
60
0.35
-55~+150
W
W/°C
°C
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=7.5A, VDD=50V, L=7mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN8N65FP
Symbol
Rth,j-c
Rth,j-a
Value
2.08
62.5
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
650
2.0
-
700
0.7
5
0.95
4.0
±100
1
10
1.2
V
V
V/°C
V
S
nA
Ω
VGS=0, ID=250μA, Tj=25℃
VGS=0, ID=250μA, Tj=150℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =40V, ID=3.75A
VGS=±30
VDS =650V, VGS =0
VDS =520V, VGS =0, Tj=125°C
VGS =10V, ID=3.75A
28
6
14
20
70
90
75
1010
120
15
1300
160
20
nC
ID=7.5A, VDD=480V, VGS=10V
ns
VDD=300V, ID=7.5A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
400
3.5
1.4
7.5
30
-
V
IS=7.5A, VGS=0V
Static
BVDSS
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
μA
A
ns
μC
VGS=0, IF=7.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN8N65FP
MTN8N65FP
Package
TO-220FP
(RoHS compliant)
Shipping
Marking
50 pcs/tube, 20 tubes/box, 4 boxes / carton
8N65
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 4/9
Characteristic Curves
MTN8N65FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 5/9
Characteristic Curves(Cont.)
MTN8N65FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 6/9
Characteristic Curves(Cont.)
MTN8N65FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 7/9
Test Circuits and Waveforms
MTN8N65FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 8/9
Test Circuits and Waveforms(Cont.)
MTN8N65FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date :
Page No. : 9/9
TO-220FP Dimension
Marking:
Device
Name
8N65
□□□□
Date Code
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Inches
Min.
Max.
0.169
0.185
0.051 REF
0.110
0.126
0.098
0.114
0.020
0.030
0.043
0.053
0.069
0.059
0.020
0.030
DIM
A
A1
A2
A3
b
b1
b2
c
Millimeters
Min.
Max.
4.300
4.700
1.300 REF
2.800
3.200
2.500
2.900
0.500
0.750
1.100
1.350
1.750
1.500
0.500
0.750
DIM
D
E
e
F
Φ
L
L1
L2
Inches
Min.
Max.
0.408
0.392
0.583
0.598
0.100 TYP
0.106 REF
0.138 REF
1.102
1.118
0.067
0.075
0.075
0.083
Millimeters
Min.
Max.
10.360
9.960
14.800 15.200
2.540 TYP
2.700 REF
3.500 REF
28.000 28.400
1.700
1.900
1.900
2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN8N65FP
CYStek Product Specification