PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier FEATURES • Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, etc.) • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3519M04-T2 Order Number NE3519M04-T2-A NE3519M04-T2B NE3519M04-T2B-A Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Quantity 3 kpcs/reel Marking V85 15 kpcs/reel Supplying Form • Embossed tape 8 mm wide • Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3519M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Note Channel Temperature Storage Temperature Note: Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 −3.0 IDSS 200 150 +150 −65 to +150 Unit V V mA μA mW °C °C Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 1 of 11 NE3519M04 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. − − − TYP. 2 10 − MAX. 3 25 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain Symbol IGSO IDSS VGS (off) gm NF Ga Test Conditions VGS = −3.0 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 50 μA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 2 GHz MIN. − 30 −0.25 80 − 16.5 TYP. 0.5 45 −0.50 − 0.40 18.5 MAX. 10 60 −0.75 − 0.70 − Unit μA mA V mS dB dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise specified) Parameter Symbol Gain 1 dB Compression Output Power PO (1 dB) R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Test Conditions VDS = 2 V, ID = 10 mA set (Non-RF), f = 2 GHz Reference Value +11 Unit dBm Page 2 of 11 NE3519M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 250 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 150 100 50 0 50 100 150 200 250 Ambient Temperature TA (°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 100 VDS = 2 V 40 Drain Current ID (mA) 35 30 25 20 15 10 80 60 VGS = 0 V 40 –0.1 V –0.2 V 20 –0.3 V –0.4 V –0.5 V 5 –0.8 –0.6 –0.4 –0.2 0 1 0 2 3 4 5 Drain to Source Voltage VDS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 2.0 20 1.8 18 1.6 16 1.4 14 Ga 1.2 12 1.0 10 0.8 8 6 0.6 NFmin 0.4 4 VDS = 2 V ID = 10 mA 0.2 0.0 0 2 4 6 8 10 12 14 16 18 2 0 20 Frequency f (GHz) Minimum Noise Figure NFmin (dB) Gate to Source Voltage VGS (V) Associated Gain Ga (dB) Minimum Noise Figure NFmin (dB) 0 –1.0 2.0 20 1.8 18 1.6 16 14 1.4 Ga 1.2 12 1.0 10 0.8 8 0.6 6 NFmin 0.4 4 VDS = 2 V ID = 25 mA 0.2 0.0 0 2 4 6 8 10 12 14 16 18 Associated Gain Ga (dB) Drain Current ID (mA) 45 2 0 20 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 3 of 11 NE3519M04 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 16 1.0 14 0.8 12 10 0.6 NFmin 0.4 8 0.2 0.0 6 0 5 10 15 20 25 Minimum Noise Figure NFmin (dB) Ga 1.2 Associated Gain Ga (dB) 18 1.4 20 1.6 f = 2.0 GHz, VDS = 2 V f = 2.5 GHz, VDS = 2 V 1.2 16 Ga 1.0 14 0.8 12 0.6 10 NFmin 0.4 8 0.2 0.0 4 30 18 1.4 Associated Gain Ga (dB) 20 1.6 Minimum Noise Figure NFmin (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 6 0 5 10 15 20 25 4 30 Drain Current ID (mA) Drain Current ID (mA) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN TO SOURCE VOLTAGE MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN TO SOURCE VOLTAGE 16 Ga 1.0 14 0.8 12 10 0.6 NFmin 0.4 8 0.2 0.0 1.0 6 1.5 2.0 2.5 3.0 4 3.5 Drain to Source Voltage VDS (V) Minimum Noise Figure NFmin (dB) 1.2 Associated Gain Ga (dB) Minimum Noise Figure NFmin (dB) 18 1.4 20 1.6 f = 2.0 GHz, ID = 10 mA f = 2.5 GHz, ID = 10 mA 18 1.4 16 1.2 Ga 1.0 14 0.8 12 0.6 10 NFmin 0.4 8 0.2 0.0 1.0 Associated Gain Ga (dB) 20 1.6 6 1.5 2.0 2.5 3.0 4 3.5 Drain to Source Voltage VDS (V) Remark The graphs indicate nominal characteristics. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 4 of 11 NE3519M04 INSERTION POWER GAIN, ISOLATION vs. FREQUENCY MSG 10 2.0 MAG 1.5 5 1.0 K factor 0 0 2.5 2 4 6 0.5 VDS = 2 V, ID = 10 mA 15 –10 |S21|2 –15 10 |S12| 2 –20 5 0 0 0.0 8 10 12 14 16 18 20 22 24 –5 20 2 4 6 –25 8 10 12 14 16 18 20 22 24 Frequency f (GHz) Frequency f (GHz) MAG, MSG, K FACTOR vs. FREQUENCY INSERTION POWER GAIN, ISOLATION vs. FREQUENCY 5.0 VDS = 2 V, 4.5 ID = 25 mA 4.0 20 3.5 15 3.0 MSG 10 2.0 MAG 5 1.5 1.0 K factor 0 0 2.5 2 4 6 0.5 0.0 8 10 12 14 16 18 20 22 24 Frequency f (GHz) 0 25 Insertion Power Gain |S21|2 (dB) 25 Isolation |S12|2 (dB) 3.0 K factor K 3.5 15 Insertion Power Gain |S21|2 (dB) 20 0 25 VDS = 2 V, ID = 25 mA –5 20 |S21|2 15 –10 10 –15 |S12|2 –20 5 0 0 Isolation |S12|2 (dB) 5.0 VDS = 2 V, 4.5 ID = 10 mA 4.0 25 K factor K Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) MAG, MSG, K FACTOR vs. FREQUENCY 2 4 6 –25 8 10 12 14 16 18 20 22 24 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 5 of 11 NE3519M04 OUTPUT POWER, POWER GAIN, DRAIN CURRENT, GATE CURRENT vs. INPUT POWER 25 80 GP 20 f = 2 GHz, VDS = 2 V, ID = 10 mA set, PO (1 dB) optimize 60 10 50 5 40 Pout 0 30 Drain Current ID (mA) Gate Current IG (mA) 15 Output Power Pout (dBm) Power Gain GP (dBm) 70 ID –5 20 –10 10 IG –15 –30 –25 –20 –15 –10 –5 0 5 10 0 15 Input Power Pin (dBm) OUTPUT POWER, IM3, DRAIN CURRENT vs. INPUT POWER 20 100 f1 = 2 000 MHz f2 = 2 001 MHz 90 80 10 Pout (2 tone) 0 70 –10 60 –20 50 IM3 (L) –30 40 IM3 (H) –40 30 –50 20 ID –60 –70 –30 Drain Current ID (mA) Output Power Pout (2 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 30 VDS = 2 V, ID = 10 mA set, PO (1 dB) optimize –25 –20 –15 –10 –5 0 5 10 0 10 Input Power Pin (2 tone) (dBm) Remark The graphs indicate nominal characteristics. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 6 of 11 NE3519M04 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/en/download.html R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 7 of 11 NE3519M04 MOUNTING PAD LAYOUT DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 3 4 0.5 1 1.3 1.25 0.6 2 1.6 0.6 Remark The mounting pad layout in this document is for reference only. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 8 of 11 NE3519M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 2.0±0.1 2 1 1.25 3 4 1.30 0.65 1.30 3 4 0.30+0.1 –0.05 0.11+0.1 –0.05 1 0.30+0.1 –0.05 0.59±0.05 (1.05) 0.65 0.60 0.65 1.25 2 1.25±0.1 V85 2.0±0.1 (Bottom View) 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 PIN CONNECTIONS 1. 2. 3. 4. Source Drain Source Gate Remark ( ): Reference value R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 9 of 11 NE3519M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 10 of 11 NE3519M04 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 11 of 11 Revision History Rev. 1.00 Date Oct 21, 2010 NE3519M04 Data Sheet Description Summary Page − First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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