RENESAS NE5550234

Data Sheet
NE5550234
R09DS0039EJ0100
Rev.1.00
Apr 25, 2012
Silicon Power MOS FET
FEATURES





High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
 150 MHz Band Radio System
 460 MHz Band Radio System
 900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550234
Order Number
NE5550234-AZ
NE5550234-T1
NE5550234-T1-AZ
Package
3-pin
power
minimold
(34 PKG)
(Pb-Free)
Marking
V5
Supplying Form
 12 mm wide embossed taping
 Gate pin faces the perforation side of the tape
 12 mm wide embossed taping
 Gate pin faces the perforation side of the tape
 Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234
ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
IDS
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note:
IDS-pulse
Ratings
30
6.0
0.6
1.2
Unit
V
V
A
A
Ptot
Tch
Tstg
12.5
150
65 to +150
W
C
C
Value at TC = 25C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 1 of 14
NE5550234
RECOMMENDED OPERATING RANGE (TA = 25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.

1.65


TYP.
7.5
2.20
0.38
15
MAX.
9.0
2.85

20
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Load VSWR Tolerance
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Notes: 1.
2.
3.
4.
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
d
add
Test Conditions
MIN.
TYP.
MAX.
Unit




100
10
nA
μA
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 A
VDS = 7.5 V, IDS = 140100 mA
Channel to Case
1.15
25


1.65
38
0.44
10.0
2.25



V
V
S
C/W
f = 460 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
31.5




33.0
0.38
70
68
23.5





dBm
A
%
%
dB
VGS = 6.0 V
VDS = 25 V
GL Note 1
Note 2
Pout
IDS
d
add
GL Note 3
Pout
IDS
d
add
GL Note 4
f = 460 MHz, VDS = 9.0 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
Load VSWR=20:1(All Phase)
f = 157 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 17 dBm,
IDset = 40 mA (RF OFF)
No Destroy




33.0
0.36
74
73




dBm
A
%
%





25.8
32.2
0.35
62
60





dB
dBm
A
%
%

18.3

dB
Pin = 0 dBm
These characteristics values are measurement using measurement tools especially by RENESAS.
Pin = 5 dBm
Pin = 7 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
The wafer rejection criterion for standard devices is 1 reject for several samples.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 2 of 14
NE5550234
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
R1
C1
L1
C1
IN
50 
OUT
C10
L10
C11
L11
L20
C12
C22
C20
NE5550234
50 
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
Value
1 F
27 pF
3.9 pF
Type
GRM31MR71H105KA88L
GRM1882C1H270JA01
GRM1882C1H3R9CZ01
Maker
Murata
Murata
Murata
C12
C20
C21
C22
R1
18 pF
12 pF
1.5 pF
100 pF
4.7 k
Murata
Murata
Murata
Murata
SSM
L1
L10, L11
L20
PCB
SMA Connecter
47.2 nH
12 nH
7.8 nH


GRM1882C1H180JA01
GRM1882C1H120JA01
GRM1882C1H1R5CZ01
GRM2162C1H101JA01D
1/10 W Chip Resistor
SSM_RG1608PB472
 0.4 mm,  D = 2 mm, 7 Turns
LL1608-FS12NJ
 0.4 mm,  D = 1.4 mm, 3 Turns
R1776, t = 0.8 mm, r = 4.8, size = 30  40 mm
WAKA 01K0790-20
Ohesangyou
TOKO
Ohesangyou
Panasonic
WAKA
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
IN
C10
C11
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
VGS
VDS
C1
C1
R1
L10 L11
C12
L1
L20
C22
OUT
C20 C21
Page 3 of 14
NE5550234
TYPICAL CHARACTERISTICS 1 (TA = 25C)
RF: f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –15 to 20 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40mA, Pout (2 tone) = 6 to 28 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
40
0.7
35
0.6
30
25
0.5
20
0.4
15
0.3
10
5
0
–20 –15 –10 –5
0
5
10
15
20
25
25
30
0.2
10
20
0.1
5
10
0.0
0
–20 –15 –10 –5
–40
–50
–60
10
15
20
25
30
5
10
15
20
25
0
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 7.5 V
2f0 - 9 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 7.5V
3f0 - 9 V
2f0 - 6 V
3f0 - 6 V
5
0
Input Power Pin (dBm)
–30
–70
0
50
15
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
2nd Harmonics 2f0 (dBc)
3rd Harmonics 3f0 (dBc)
–20
60
40
2f0, 3f0 vs. OUTPUT POWER
–10
70
20
Input Power Pin (dBm)
0
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 7.5 V
Gp - 9 V
Gp - 6 V
η add - 3.6 V
η add - 4.5 V
η add - 7.5 V
η add - 9 V
η add - 6 V
Power Added Efficiency η add (%)
Output Power Pout (dBm)
30
0.8
Power Gain GP (dB)
35
Pout - 3.6 V
Pout - 4.5 V
Pout - 7.5 V
Pout - 9 V
Pout - 6 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 7.5 V
IDS - 9 V
IDS - 6 V
Drain Current IDS (A)
40
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
35
40
Output Power Pout (dBm)
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 7.5 V
IM3 - 9 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 7.5 V
IM5 - 9 V
IM3 - 6 V
IM5 - 6 V
–10
–20
–30
–40
–50
–60
–70
0
5
10
15
20
25
30
2 Tones Output Power Pout (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 4 of 14
NE5550234
TEST CIRCUIT SCHEMATIC FOR 157 MHz
VGS
VDS
R1
C1
L1
C2
IN
50 
OUT
L10
C10
R10
NE5550234
C11
L11
C20
50 
C22
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C10
C11
Value
27 pF
6.8 pF
Type
GQM1882C1H270JB01
GQM1882C1H6R8DB01
Maker
Murata
Murata
C20
C21
8.2 pF
27 pF
GQM1882C1H8R2DB01
GQM1882C1H270JB01
Murata
Murata
C22
C1
C2
L10
L11
L1
R11
R1
PCB
SMA Connecter
100 pF
1 F
1 F
100 nH
47 nH
74 nH
5.6 
4.7 k


GQM1882C1H101JB01
GRM21BB31H105KA2L
GRM21BB31H105KA2L
LL1608-FSLR10J
D20-47N2
D20-74N7
MCR03J5R6
MCR03J472
R1776, t = 0.8 mm, r = 4.8, size = 30  40 mm
WAKA 01K0790-20
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Murata
Murata
Murata
Toko
Ohesangyou
Ohesangyou
Rohm
Rohm
Panasonic
WAKA
Page 5 of 14
NE5550234
COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz
VDS
VGS
C2
RF IN
RF OUT
C1
C10
L10
L1
R1
R10
C11
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
C20
L11
C22
C21
Page 6 of 14
NE5550234
TYPICAL CHARACTERISTICS 2 (TA = 25C)
RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
0.7
35
30
0.6
30
25
0.5
20
0.4
Output Power Pout (dBm)
35
15
10
5
0
–15 –10
–5
0
5
10
15
20
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
Gp - 7.5 V
Gp - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6 V
η add - 7.5 V
η add - 9 V
70
60
25
50
20
40
15
30
0.2
10
20
0.1
5
10
0.3
IDS - 3.6 V
IDS - 4.5 V
IDS - 6 V
IDS - 7.5 V
IDS - 9 V
Power Gain GP (dB)
40
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
Drain Current IDS (A)
0.8
40
0.0
25
Input Power Pin (dBm)
0
–15
–10
–5
0
5
10
15
20
Power Added Efficiency η add (%)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
0
25
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 7 of 14
NE5550234
TEST CIRCUIT SCHEMATIC FOR 900 MHz
VGS
VDS
R1
C1
L1
C2
IN
OUT
50 
C10
NE5550234
L11
C20
C22
50 
C21
L10
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C10
C20
Value
10 pF
6.8 pF
Type
GQM1882C1H100JB01
GQM1882C1H6R8DB01
C21
C22
C1
C2
L10
L1
R1
PCB
SMA Connecter
1 pF
100 pF
1 F
1 F
2.7 nH
74 nH
4.7 k


GQM1884C2A1R0CB01
GQM1882C1H101JB01
GRM21BB31H105KA2L
GRM21BB31H105KA2L
LL1608-FSL2N7S
D20-74N7
MCR03J472
R1776, t = 0.8 mm, r = 4.8, size = 30  40 mm
WAKA 01K0790-20
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Maker
Murata
Murata
Murata
Murata
Murata
Murata
Toko
Ohesangyou
Rohm
Panasonic
WAKA
Page 8 of 14
NE5550234
COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
VDS
VGS
C2
RF IN
C1
R1
C10
L10
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
RF OUT
L1
C22
C20 C21
Page 9 of 14
NE5550234
TYPICAL CHARACTERISTICS 3 (TA = 25C)
f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm)
25
140
35
120
30
100
20
80
15
60
10
40
5
0
–15
–10
–5
0
5
10
15
20
25
25
Power Gain GP (dB)
30
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6.0 V
η add - 7.5 V
η add - 9 V
Power Added Efficiency η add (%)
35
POWER GAIN, DRAIN CURRENT
vs. INPUT POWER
0.7
GP - 3.6 V
GP - 4.5 V
GP - 6 V
GP - 7.5 V
GP - 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
IDS - 7.5 V
IDS - 9 V
0.6
0.5
20
0.4
15
0.3
10
0.2
20
5
0.1
0
0
–15 –10
Input Power Pin (dBm)
–5
0
5
10
15
20
25
Drain Current IDS (A)
RF:
0
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 10 of 14
NE5550234
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to
microwave circuit simulators without keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/download/parameter/
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 11 of 14
NE5550234
MOUNTING PAD LAYOUT DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
1.4
45°
0.4
2.8
45°
0.9
2.2
1.0
1.0
2.0
1.0
2.0
Remark The mounting pad layout in this document is for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 12 of 14
NE5550234
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
(Bottom View)
(Side View)
4.5±0.1
1.5±0.1
0.8 MIN.
3
0.42±0.06
4.0±0.25
2
1
2.5±0.1
1.6±0.2
0.42±0.06
0.41+0.03
–0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
1. Drain
2. Source
3. Gate
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 13 of 14
NE5550234
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220C or higher
Preheating time at 120 to 180C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260C or below
: 10 seconds or less
: 60 seconds or less
: 12030 seconds
: 3 times
: 0.2% (Wt.) or below
Condition Symbol
IR260
Wave Soldering
Peak temperature (molten solder temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
WS260
Partial Heating
Peak temperature (terminal temperature)
: 350C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 14 of 14
Revision History
Rev.
1.00
Date
Apr 25, 2012
NE55500234 Data Sheet
Description
Summary
Page

First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 1.1