RENESAS NESG220034

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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Notice
1.
2.
3.
4.
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“Standard”:
8.
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11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG220034
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz
• PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =12.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 11.5 GHz
• This product is improvement of ESD of NESG2xxx series.
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG220034
NESG220034-T1
Order Number
NESG220034-A
Package
Quantity
3-pin power minimold
25 pcs
(34 PKG) (Pb-Free)
(Non reel)
NESG220034-T1-A
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Pin 2 (Collector) face the perforation side of the
tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10767EJ02V0DS (2nd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009
NESG220034
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5.5
V
Collector to Emitter Voltage
VCES
13
V
Collector to Emitter Voltage
VCEO
5.5
V
Note 1
IB
36
mA
Collector Current
IC
200
mA
886
mW
Base Current
<R>
Total Power Dissipation
Ptot
Note 2
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB
THERMAL RESISTANCE (TA = +25°C)
Parameter
<R>
Termal Resistance from Junction to
Note
Ambient
Symbol
Ratings
Unit
Rthj-a
141
°C/W
Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
<R>
Collector Current
2
Symbol
MIN.
TYP.
MAX.
Unit
IC
−
40
−
mA
Data Sheet PU10767EJ02V0DS
NESG220034
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.4 V, IC = 0 mA
−
−
100
nA
VCE = 5 V, IC = 10 mA
140
180
260
−
VCE = 5 V, IC = 40 mA, f = 1 GHz
−
11.5
−
GHz
⏐S21e⏐
VCE = 5 V, IC = 40 mA, f = 1 GHz
9.5
11.5
−
dB
Noise Figure (1)
NF1
VCE = 5 V, IC = 10 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50Ω
−
0.7
1.1
dB
Noise Figure (2)
NF2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.9
−
dB
Associated Gain (1)
Ga1
VCE = 5 V, IC = 10 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50Ω
8.5
10.5
−
dB
Associated Gain (2)
Ga2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
12.0
−
dB
VCB = 5 V, IE = 0 mA, f = 1 MHz
−
0.9
1.1
pF
VCE = 5 V, IC = 40 mA, f = 1 GHz
11.0
12.5
−
dB
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
22.5
−
dBm
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
−
35
−
dBm
DC Current Gain
hFE
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note 3
Gain 1 dB Compression Output
Power
PO (1 dB)
Output 3rd Order Intercept Point
OIP3
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
S21
S12
hFE CLASSIFICATION
Rank
FB
Marking
SS
hFE Value
140 to 260
Data Sheet PU10767EJ02V0DS
3
NESG220034
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation Ptot (mW)
1 000
Reverse Transfer Capacitance Cre (pF)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
3.8 cm × 9.0 cm × 0.8 mm (t),
FR–4
886
500
0
25
50
75
100
125
1.2
f = 1 MHz
1.1
1.0
0.9
0.8
0.7
0.6
0
150
3
4
5
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 5 V
10
Collector Current IC (mA)
Collector Current IC (mA)
2
Collector to Base Voltage VCB (V)
VCE = 3 V
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
10
1
0.1
0.01
0.001
0.0001
0.4
Base to Emitter Voltage VBE (V)
200
1 700 μ A
1 500 μA
1 300 μ A
1 100 μ A
150
900 μ A
700 μ A
100
500 μ A
300 μ A
50
IB = 100 μ A
0
0
1
2
3
0.5
0.6
0.7
0.8
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
4
1
Ambient Temperature TA (°C)
100
Collector Current IC (mA)
<R>
Data Sheet PU10767EJ02V0DS
0.9
NESG220034
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
1
0.1
VCE = 5 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 3 V
1
10
100
10
100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1 000
30
VCE = 3 V,
f = 1 GHz
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
1
Collector Current IC (mA)
20
15
10
5
0
1
10
1
0.1
1 000
30
25
100
10
100
VCE = 5 V,
f = 1 GHz
25
20
15
10
5
0
1
Collector Current IC (mA)
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10767EJ02V0DS
5
NESG220034
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 3 V,
IC = 10 mA
30
25
MSG
20
MAG
MAG
15
|S21e|
MSG
2
10
5
0
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
VCE = 3 V,
IC = 40 mA
30
25
MSG
MAG
20
MAG
15
|S21e|
MSG
2
10
5
0
0.1
10
1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 5 V,
IC = 10 mA
30
25
MSG
20
MAG
MAG
15
|S21e|
MSG
2
10
5
0
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
35
VCE = 5 V,
IC = 40 mA
30
25
MSG
20
MAG
MAG
MSG
15
2
|S21e|
10
5
0
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V,
f = 1 GHz
MSG
15
MAG
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
20
VCE = 5 V,
f = 1 GHz
MSG
MAG
15
10
|S21e|2
5
0
1
10
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
6
35
Frequency f (GHz)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Data Sheet PU10767EJ02V0DS
100
NESG220034
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
3
14
12
Ga
10
8
2
6
1
4
NF
2
0
1
0
100
10
Output 3rd Order Intercept Point OIP3 (dBm)
16
VCE = 5 V,
f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
Associated Gain Ga (dB)
Noise Figure NF (dB)
4
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
VCE = 5 V,
f1 = 1.000 GHz,
f2 = 1.001 GHz
30
20
10
0
400
Pout
20
300
GL
10
200
IC
0
–10
–20
100
–10
0
10
0
30
20
Collector Current IC (mA)
Output Power Pout (dBm)
Linear Gain GL (dB)
500
VCE = 5 V,
IC (set) = 40 mA,
f = 1 GHz
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dB)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
30
10
100
Collector Current IC (mA)
Collector Current IC (mA)
40
1
EACH OUTPUT POWER ,IM3
vs. EACH INPUT POWER
40
30
20
10
Pout (each)
0
–10
–20
–40
–40
IM3
–50
–60
–70
–80
–10
–20
VCE = 5 V,
IC (set) = 40 mA,
f1 = 1.000 GHz,
f2 = 1.001 GHz
0
10
20
30
Each Input Power Pin (each) (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PU10767EJ02V0DS
7
NESG220034
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
4.5±0.1
1.5±0.1
0.8 MIN.
2
1
3
0.42±0.06
4.0±0.25
2.5±0.1
1.6±0.2
0.42±0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
1. Emitter
2. Collector
3. Base
8
Data Sheet PU10767EJ02V0DS
0.41+0.03
–0.06
NESG220034
• The information in this document is current as of November, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E