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DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS (Unit: mm) DESCRIPTION 6.5 ±0.2 voltage. 5.0 ±0.2 0.5 ±0.1 2 3 1.1 ±0.2 • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a 13.7 MIN. FEATURES 1 5.5 ±0.2 power supply devices, as well as for high-current switching. 7.0 MIN. converters, motor drivers, solenoid drivers, and other low-voltage 2.3 ±0.2 4 1.6 ±0.2 This transistor is ideal for use in switching regulators, DC/DC 1.5 −0.1 switching and features a very low collector-to-emitter saturation +0.2 The 2SA1647 is a mold power transistor developed for high-speed +0.2 hybrid IC. +0.2 0.5 −0.1 0.5 −0.1 2.3 2.3 0.75 • Low collector saturation voltage: VCE(sat)1 = −0.3 V MAX. (IC = −3.0 A) • Fast switching speed: tf = 0.4 μs MAX. (IC = −3.0 A) TO-251 (MP-3) • High DC current gain and excellent linearity Collector to base voltage VCBO −150 V Collector to emitter voltage VCEO −100 V Base to emitter voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A −10 A Collector current (pulse) Base current (DC) Total power dissipation (Tc = 25°C) IC(pulse) Note 1 −2.5 IB(DC) 1.0 Note 2 PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2. Printing board mounted <R> 3. 7.5 cm2 × 0.7 mm ceramic board mounted 4 1 2 3 +0.2 −0.1 Note 2.3 ±0.2 0.5 ±0.1 Note 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 2.3 ±0.3 0.15 ±0.15 W Note 3 Total power dissipation (TA = 25°C) Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 4.4 ±0.2 A 18 PT 5.0 ±0.2 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 Unit 1.5 Ratings 9.5 ±0.5 Symbol 5.5 ±0.2 Parameter 6.5 ±0.2 <R> 5.6 ±0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) , 2.0 W ELECTRODE CONNECTION 1. Base TO-252 (MP-3Z) 2. Collector 3. Emitter 4. Collector Fin Note The depth of notch at the top of the fin is from 0 to 0.2 mm. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14839EJ5V0DS00 (5th edition) Date Published June 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2002 2SA1647,1647-Z ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector to emitter voltage VCEO(SUS) IC = −2.5 A, IB = −0.25 A, L = 1 mH −100 V Collector to emitter voltage VCEX(SUS) IC = −2.5 A, IB1 = −IB2 = −0.25 A, VBE(OFF) = 1.5 V, L = 180 μH, clamped −100 V Collector cutoff current ICBO VCB = −100 V, IE = 0 A −10 μA Collector cutoff current ICER VCE = −100 V, RBE = 50 Ω, TA = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −100 V, VBE(OFF) = 1.5 V −10 μA Collector cutoff current ICEX2 VCE = −100 V, VBE(OFF) = 1.5 V, TA = 125°C −1.0 mA Emitter cutoff current IEBO VEB(OFF) = −5.0 V, IC = 0 A −10 μA DC current gain Note VCE = −2.0 V, IC = −0.5 A 100 Note VCE = −2.0 V, IC = −1.0 A 100 Note VCE = −2.0 V, IC = −3.0 A 60 hFE1 DC current gain hFE2 DC current gain hFE3 Collector saturation voltage IC = −3.0 A, IB = −0.15 A −0.3 V Note IC = −4.0 A, IB = −0.2 A −0.5 V Note IC = −3.0 A, IB = −0.15 A −1.2 V Note IC = −4.0 A, IB = −0.2 A −1.5 V Note VCE(sat)1 Collector saturation voltage VCE(sat)2 Base saturation voltage VBE(sat)1 Base saturation voltage Collector capacitance VBE(sat)2 Cob VCB = −10 V, IE = 0, f = 1.0 MHz 110 pF 90 MHz Gain bandwidth product fT VCE = −10 V, IC = 0.5 A Turn-on time ton Storage time tstg IC = −3.0 A, RL = 17 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −50 V Refer to SWITCHING TIME TEST CIRCUIT. Fall time tf 400 0.3 μs 1.5 μs 0.4 μs Note Pulse test PW ≤ 350 μs, Duty Cycle ≤ 2%/Pulsed hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME TEST CIRCUIT RL = 17 Ω VIN Base current waveform IC IB1 TUT IB2 IB2 IB1 VCC ≅ −50 V Collector current waveform 10% IC 90% PW PW ≅ 50 μ s Duty Cycle ≤ 2% 2 VBB ≅ 5 V ton Data Sheet D14839EJ5V0DS tstg tf 2SA1647,1647-Z TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 12 9 100 80 60 im ite d io n ite d 20 m 3 Li 40 50 100 150 0 FORWARD BIAS SAFE OPERATING AREA TC = 25°C Single pulse IC(pulse) 10 IC(DC) Di PW ss ipa 10 tio nL im 1.0 ite d = 1 m s m s DC S/ b Lim ite d 0.1 10 100 Rth(j−A) = 125°C/W 100 DC Current Gain hFE -9 -8 -7 -3 IB = 50 mA 45 mA 40 mA 35 mA 30mA 25 mA 20 mA 15 mA 10 mA -2 Rth(j−C) = 6.94°C/W 10 1.0 0.1 1m 10 m 100 m 1 10 100 1000 10000 DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 2 V Pulse test TA = 125°C -10 -4 TC = 25°C Single pulse Pulse Width PW (s) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -5 150 TRANSIENT THERMAL RESISTANCE 1000 Collector to Emitter Voltage VCE (V) -6 100 50 Case Temperature TC (°C) Transient Thermal Resistance rth(j−c) (t) (°C/W) Case Temperature TC (°C) Collector Current IC (A) bL at 6 0 Collector Current IC (A) S/ ip IC Derating dT (%) 15 ss Di Total Power Dissipation PT (W) 18 DERATING CURVE OF SAFE OPERATING AREA 25°C −40°C 100 5 mA -1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 10 -0.01 Collector to Emitter Voltage VCE (V) Data Sheet D14839EJ5V0DS -0.1 -1 -10 Collector Current IC (A) 3 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT −10 IC / IB = 20 A Pulse test −1.0 TA = 125°C 25°C −40°C −0.1 −0.01 −0.1 −1.0 −10 Collector Current IC (A) −10 Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SA1647,1647-Z IC / IB = 20 A Pulse test TA = −40°C 25°C 125°C −0.1 −100 −0.1 −1 Collector Current IC (A) −10 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1000 Collector Capacitance Cob (pF) 1000 Gain Bandwidth Product fT −1 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 300 100 30 100 10 10 −0.03 −0.1 −0.3 −1 Collector Current IC (A) −3 −10 4 0.005 0.01 0.1 Turn-On Time ton (μs) StorageTime tstg (μs) Fall Time tf (μs) TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10 IC = 20 A • IB1 = −20 A • IB2 tstg 1.0 ton tf 0.1 0.1 1 10 100 Collector Current IC (A) 4 1 10 100 Collector to Base Voltage VCB (V) Data Sheet D14839EJ5V0DS 1000 2SA1647,1647-Z • The information in this document is current as of June, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. 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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1