C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF (TC=135˚C) = 14 A Z-Rec Rectifier ® Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • • • • = TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C4D10120A TO-220-2 C4D10120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 29.5 14 10 A TC=25˚C TC=135˚C TC=152˚C IFRM Repetitive Peak Forward Surge Current 47 31.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 71 59.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 750 620 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Ptot Power Dissipation 136 59 W TC=25˚C TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C4D10120A Rev. B M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 10 A TJ=25°C IF = 10 A TJ=175°C IR Reverse Current 30 55 250 350 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 52 nC VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 754 45 38 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz 1. Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 1.1 Max. Unit Test Conditions Note °C/W Typical Performance 600.00 20 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C IF (A)Current IF Forward 16 500.00 IR (μA) IR Reverse Current (µA) 18 14 12 10 8 6 4 400.00 300.00 200.00 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 100.00 2 0.00 0 0 0.5 1 1.5 2 2.5 VF Forward VF (V)Voltage Figure 1. Forward Characteristics 2 C4D10120A Rev. B 3 3.5 0 500 1000 1500 VR Reverse VR (V)Voltage Figure 2. Reverse Characteristics 2000 Typical Performance C4D10120A Current Derating 160.0 100 70 90 10% 20% 30% 50% 70% DC 60 50 70 120.0 100.0 60 40 PTot (W) I (A) F(peak) IF(PEAK) Peak Forward Current (A) 80 140.0 Duty Duty Duty Duty Duty 50 30 40 30 20 80.0 60.0 40.0 20 20.0 10 10 00 0.0 25 25 50 50 75 75 100 100 125 125 Tc Case Temperature (C) 150 150 25 175 175 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 4. Power Derating Figure 3. Current Derating 800 70 700 60 600 50 500 C (pF) Qrr (nC) 40 30 20 300 200 10 100 0 0 200 400 600 800 0 1000 0.1 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 400 C4D10120A Rev. B 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 25 25.0 1000 1000 EC Capacitive Energy (uJ) C 20 20.0 (A) IFSMIFSM (A) E (mJ) 15 15.0 10 10.0 100 100 TJ = 25°C TJ = 110°C 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Thermal Resistance Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 1 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D10120A Rev. B 100E-3 1 Package Dimensions Package TO-220-2 A P F J C Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 D B D X S E Y G T Z U H W N F A B C G D E H F J G L H M J N L M P N Q P S Q V L M Max C P OS Q T U V S T U V W W PIN 1 PIN 2 X X Y Y z CASE Millimeters Min E 1 2 Inches POS Z Inc hes .100 .120M illim eters 2.540 M in M ax M in M ax .223 .337 5.664 .395 .410 10.033 10.414 .590 .615 14.986 .235 .255 5.969 6.477 .143 .102 .337 1.105 .590 .500 .149 R 1.127 .025 .530 .112 R 0.010 .045 .028 .195 .036 .045 .055 .165 .195 .205 .048 .180 .170 .0483° .153 2.591 .337 1.147 8.560 .610 14.986 .550 .153 3.785 0.197 1.147 28.626 .550 .036 13.462 .054 3.632 2.845 3°3° .395 .385 5.5°3° .410 .410 10.033 5° 3° 10.414 9.779 3.302 .150 3.810 3.302 Part Number Package Marking C4D10120A TO-220-2 C4D10120 TO-220-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C4D10120A Rev. B 4.699 1.372 6° 2.794 .635 5.5° 10.414 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout 5.207 6° 5° 3° 5° 3° 5° 2.388 2.794 .356 .533 .150 1.397 6° 6° 3° 5° 3° 6° 5° 3° .110 .110 2.54 .021 .025 .356 5° 3.886 3° 1.371 3°3° 3° 3° 3° .094 .100 .014 .014 .130 .130 5° 8.560 15.621 8.560 28.067 29.134 15.494 12.700 13.970 3.886 R 0.197 29.134 .635 .914 13.970 .055 R 0.254 1.143 .711 .914 .205 4.953 1.143 1.397 .185 4.191 4.953 5.207 .054 1.219 4.318 4.572 6°1.219 3.048 Diode Model Diode Model CSD04060 VfVTfT== VTV+T+If*R If*RT T -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.98+(T -1.71*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.040+(T J* 5.32*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D10120A Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power