Cree C5D50065D Silicon Carbide Schottky Diode - Z

C5D50065D
VRRM = Silicon Carbide Schottky Diode
IF (TC=130˚C) = 50 A
Z-Rec® Rectifier
Qc Features
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= 110 nC
Package
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-247-3
Benefits
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650 V
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
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Solar Inverters
Motor Drives
EV Chargers
UPS
Automotive
Part Number
Package
Marking
C5D50065D
TO-247-3
C5D50065
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Peak Blocking Voltage
650
V
Continuous Forward Current 100
50
46
A
TC=25˚C
TC=130˚C
TC=135˚C
IFRM
Repetitive Peak Forward Surge Current
153
106
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Forward Surge Current
400
330
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IF,Max
Non-Repetitive Peak Forward Current
2000
1600
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
300
130
W
TC=25˚C
TC=110˚C
-55 to
+175
˚C
1
8.8
Nm
lbf-in
IF
Ptot
Power Dissipation
TJ , Tstg
Operating Junction and Storage
Temperature
TO-247 Mounting Torque
1
Value
C5D50065D Rev. -
M3 Screw
6-32 Screw
Note
Electrical Characteristics
Symbol
VF
Parameter
Forward Voltage
IR
Reverse Current
QC
Total Capacitive Charge
C
Total Capacitance
Typ.
Max.
1.5
1.25
1.8
1.8
1.3
2.2
50
4
500
200
6
1000
Unit
Test Conditions
Note
IF = 50 A TJ=25°C
IF = 25 A TJ=25°C
V
IF = 50 A TJ=175°C
IF = 25 A TJ=175°C
VR = 650 V , TJ=25°C
VR = 400 V , TJ=25°C
μA
VR = 650 V , TJ=175°C
VR = 400 V , TJ=175°C
110
nC
VR = 400 V, IF = 50 A
di/dt = 500 A/μs
TJ = 25°C
1970
200
180
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
0.5
°C/W
Typical Performance
100
0.45
ReverseILeakage
ReverseCurrent,
Voltage I(mA)
RR (mA)
R
0.40
IFFoward
ForwardCurrent,
Current I(A)
F (A)
75
TJ = 175 °C
TJ = 125 °C
50
TJ = 75 °C
TJ = 25 °C
25
TJ = -55 °C
0
TJ = 175 °C
0.30
0.25
TJ = 125 °C
0.20
TJ = 75 °C
0.15
TJ = 25 °C
0.10
TJ = -55 °C
0.05
0.00
0
0.5
1
1.5
2
2.5
3
FowardVoltage
Voltage, V(V)
VF Forward
F (V)
Figure 1. Forward Characteristics
2
0.35
C5D50065D Rev. -
3.5
4
0
100
200
300
400
500
Reverse Voltage
Voltage, VR (V)
VR Reverse
(V)
Figure 2. Reverse Characteristics
600
700
Typical Performance
350
350
325
325
300
300
10%
20%
30%
50%
70%
DC
200
200
IF (A)
275
275
250
250
225
225
PTOT (W)
250
250
Duty
Duty
Duty
Duty
Duty
Power Dissipation (W)
300
300
150
150
100
100
200
200
175
175
150
150
125
125
100
100
75
75
50
50
50
50
25
25
00
25 50 75 100 125 150 175
25
50
75
100
125
150
175
00
25 50 75 100 125 150 175
25
50
75
100
125
(°C)
TcTCase
Temperature (°C)
C
TC (°C)
Figure 3. Current Derating
2000
2000
Conditions:
= 25 °CC
TTJ =25
Conditions:
Conditions:
Figure 6. Power Derating
TJ = 25 °C
T =25 C
FFtest ==1
1 MHz
MHz
25 mV
VVtest ==25mV
Conditions:
J
1800
1800
°
J
100
100
°
test
1600
1600
test
1400
1400
80
80
Capacitance (pF)
60
60
C (pF)
Q (nC)
175
Figure 4. Power Derating
120
120
rr
Capacitive
Charge, QC (nC)
150
40
40
1200
1200
1000
1000
800
800
600
600
400
400
20
20
200
200
00
0 50 100 150 200 250 300 350 400
0
50
100
150
200
250
300
350
400
ReverseVVoltage,
(V)VR (V)
R
Figure 5. Recovery Charge vs. Reverse Voltage
3
C5D50065D Rev. -
00
0.1
0.1
1
1
10
10
100
100
1000
Reverse
VRVoltage,
(V) VR (V)
Figure 6. Typical Capacitance vs. Reverse Voltage
1000
Typical Performance
10000
10000
IIFSM(A)
(A)
FSM
1000
1000
TJ = 25°C
TJ = 110°C
100
100
10
0
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
tp (s)
Figure 7. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
(°C/W)
Thermal
Junction
To Resistance
Case Impedance,
ZthJC (oC/W)
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
SinglePulse
0.01
1E-3
100E-6
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 8. Transient Thermal Impedance
4
C5D50065D Rev. -
100E-3
1
Package Dimensions
POS
PackageTO-247-3
X
Z
W
Inches
Min
Y
AA
CC
Min
Max
16.130
A
.605
.635
15.367
B
.800
.831
20.320
21.10
C
.780
.800
19.810
20.320
D
.095
.133
2.413
3.380
E
.046
.052
1.168
1.321
F
.060
.095
1.524
2.410
G
BB
Millimeters
Max
.215TYP
5.460TYP
H
.175
.205
4.450
5.210
J
.075
.085
1.910
2.160
K
6˚
21˚
6˚
21˚
L
4˚
6˚
4˚
6˚
M
2˚
4˚
2˚
4˚
N
2˚
4˚
2˚
4˚
P
.090
.100
2.286
2.540
Q
.020
.030
.508
.762
R
9˚
11˚
9˚
11˚
S
9˚
11˚
9˚
11˚
T
2˚
8˚
2˚
8˚
U
2˚
8˚
2˚
8˚
V
.137
.144
3.487
3.658
W
.210
.248
5.334
6.300
X
.502
.557
12.751
14.150
Y
.637
.695
16.180
17.653
Z
.038
.052
0.964
1.321
AA
.110
.140
2.794
3.556
BB
.030
.046
0.766
1.168
CC
.161
.176
4.100
4.472
Recommended Solder Pad Layout
Part Number
Package
Marking
C5D50065D
TO-247-3
C5D50065
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C5D50065D Rev. -
Diode Model
Diode Model CSD10060
Vf
Vf T T==VTV+T+If*R
If*RT T
V
-3
0.9947+(T
J* -0.0013)
VTT==0.92
+ (Tj * -1.35*10
)
-5
-3
R
0.0093+(T
)
J* 7.00*10
RT =0.052
+ (T * 0.29*10
)
T=
j
Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C5D50065D Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power