Dual Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module Features 2 output channels Isolated power supply Direct mount low inductance design Short circuit protection Under voltage protection For use with Cree Module CAS300M12BM2, 1200V, 300A module. Applications Driver for 1.2kV, SiC MOSFET modules DC Bus voltage up to 900V Part Number Package Marking CGD15HB62P PCBA CGD15HB62P Rev2 Absolute Maximum Ratings Symbol Vs ViH ViL IO.pk IO.avg.max FMax VDS Visol Top Tstg 1 Parameter Value Unit Power Supply Voltage Input signal voltage HIGH Input signal voltage LOW Output peak current Ouput average current 16 5 V Max. Switching frequency Max. Drain to source voltage Input to output isolation voltage Operating temperature Storage temperature CGD15HB62P Rev - 0 V V 9 2 A A 32 (64)* kHz 1200 ±1200 -35 to 85 -40 to 85 Test Conditions V V ºC ºC *Can be increased to 64kHz by replacing the 1W isolated power supply with a 2Watt version R12P212D from Recom. Note Characteristics Symbol VS Vi ISO ViT+ ViTTdon Tdoff Terr W MTBF Parameter Supply voltage Input signal voltage on/off Supply current (no load) Supply current (max.) Input threshold voltage HIGH Input threshold voltage LOW Turn on propogation delay Turn off propogation delay Pulse width for resetting fault Weight Mean time between failure Min Value Typ Max 13.0 15.0 16.0 5/0 140 320 Unit Test Conditions Notes V V 170 400 3.5 85 ºC 85 ºC mA V 1.5 V 210 280 nS 207 285 nS 800 nS 63 g 1.5 106h Block Diagram X1: Vs 18,20,22,24 X10: DESAT Upper LR: +10V 20V X1: Common 1,3,5,7,9,11,13,15,17,19,21,23 IXDN609SI X1: Gate Upper 2 1ED020I12-F2 X1: RDY Upper 6 X1: /RST Upper 4 X1: /FLT Upper 8 LR: +5V D1 Rg.off 4.7k X31: Source U (Gate RTN) -5V LR: +12V -5V X21: Source L (Gate RTN) D1 Rg.off Rg X1: Gate Lower 10 X1: RDY Lower 14 4.7k X20: Gate L IXDN609SI 1ED020I12-F2 X1: /RST Lower 12 X1: /FLT Lower 16 X30: Gate U Rg 20V LR: +10V X11: DESAT Lower Note: Default gate resistor for Rg is 10 for the gate ON and OFF. The user can control the gate turn ON and OFF speed by changing Rg to a lower value and gain better efficiency. The user can also control the Gate turn-ON and OFF speed independently by populating Rg.off and D1. 2 CGD15HB62P Rev - Typical Application 3 X10 X30 X31 Vs, PWM, /RST CPU X1 /FLT, RDY CGD15HB62P 2-Ch Driver X11 X20 X21 4 1 5 6 7 2 CAS300M12BM2 Cree 62mm, 1.2kV, 300A SiC MOSFET Module Mounting Instructions Designed to directly mount to Cree 62 mm style power modules. Four (4) mounting holes for 4x M4-8, Nylon screws are provided to secure the board to a bracket or enclosure (0.5 Nm) for additional support. External wires with spade style connectors should be used to connect the Desat detect pins (X10 & X11) from the module to the gate drive board. 3 CGD15HB62P Rev - Mechanical Drawing (units in Inches) Full Gate Driver reference design available upon request Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 4 CGD15HB62P Rev - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power