CGD15HB62P - Cree, Inc

Dual Channel SiC MOSFET Driver
Gate Driver for 1200V SiC MOSFET Power Module
Features





2 output channels
Isolated power supply
Direct mount low inductance design
Short circuit protection
Under voltage protection
For use with Cree Module

CAS300M12BM2, 1200V, 300A module.
Applications


Driver for 1.2kV, SiC MOSFET modules
DC Bus voltage up to 900V
Part Number
Package
Marking
CGD15HB62P
PCBA
CGD15HB62P Rev2
Absolute Maximum Ratings
Symbol
Vs
ViH
ViL
IO.pk
IO.avg.max
FMax
VDS
Visol
Top
Tstg
1
Parameter
Value
Unit
Power Supply Voltage
Input signal voltage
HIGH
Input signal voltage
LOW
Output peak current
Ouput average current
16
5
V
Max. Switching
frequency
Max. Drain to source
voltage
Input to output
isolation voltage
Operating temperature
Storage temperature
CGD15HB62P Rev -
0
V
V
9
2
A
A
32 (64)*
kHz
1200
±1200
-35 to 85
-40 to 85
Test Conditions
V
V
ºC
ºC
*Can be increased to 64kHz
by replacing the 1W isolated
power supply with a 2Watt
version R12P212D from
Recom.
Note
Characteristics
Symbol
VS
Vi
ISO
ViT+
ViTTdon
Tdoff
Terr
W
MTBF
Parameter
Supply voltage
Input signal voltage
on/off
Supply current (no load)
Supply current (max.)
Input threshold voltage
HIGH
Input threshold voltage
LOW
Turn on propogation
delay
Turn off propogation
delay
Pulse width for resetting
fault
Weight
Mean time between
failure
Min
Value
Typ
Max
13.0
15.0
16.0
5/0
140
320
Unit
Test Conditions
Notes
V
V
170
400
3.5
85 ºC
85 ºC
mA
V
1.5
V
210
280
nS
207
285
nS
800
nS
63
g
1.5
106h
Block Diagram
X1: Vs
18,20,22,24
X10: DESAT Upper
LR: +10V
20V
X1: Common
1,3,5,7,9,11,13,15,17,19,21,23
IXDN609SI
X1: Gate Upper
2
1ED020I12-F2
X1: RDY Upper
6
X1: /RST Upper
4
X1: /FLT Upper
8
LR: +5V
D1 Rg.off
4.7k
X31: Source U (Gate RTN)
-5V
LR: +12V
-5V
X21: Source L (Gate RTN)
D1 Rg.off
Rg
X1: Gate Lower
10
X1: RDY Lower
14
4.7k
X20: Gate L
IXDN609SI
1ED020I12-F2
X1: /RST Lower
12
X1: /FLT Lower
16
X30: Gate U
Rg
20V
LR: +10V
X11: DESAT Lower
Note: Default gate resistor for Rg is 10 for the gate ON and OFF. The user can control the gate turn
ON and OFF speed by changing Rg to a lower value and gain better efficiency. The user can also
control the Gate turn-ON and OFF speed independently by populating Rg.off and D1.
2
CGD15HB62P Rev -
Typical Application
3
X10
X30
X31
Vs, PWM, /RST
CPU
X1
/FLT, RDY
CGD15HB62P
2-Ch Driver
X11
X20
X21
4
1
5
6
7
2
CAS300M12BM2
Cree 62mm, 1.2kV, 300A
SiC MOSFET Module
Mounting Instructions
Designed to directly mount to Cree 62 mm style power modules. Four (4)
mounting holes for 4x M4-8, Nylon screws are provided to secure the board
to a bracket or enclosure (0.5 Nm) for additional support.
External wires with spade style connectors should be used to connect the
Desat detect pins (X10 & X11) from the module to the gate drive board.
3
CGD15HB62P Rev -
Mechanical Drawing
(units in Inches)
Full Gate Driver reference design available upon request
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
4
CGD15HB62P Rev -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power