Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±12 16 64 16 10 10 12.5 10.0 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Page 1 of 6 RJK03F8DNS Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 7 8.3 40 1500 162 104 0.7 11.3 3.5 4.6 12.8 8.0 38.1 Max — ±0.1 1 2.5 8.4 10.4 — 2100 — — 1.9 — — — — — — Unit V A A V m m S pF pF pF nC nC nC ns ns ns — — — 6.8 0.85 21 — 1.11 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 8 A, VGS = 8 V Note4 ID = 8 A, VGS = 4.5 V Note4 ID = 8 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 16 A VGS = 8 V, ID = 8 A VDD 10 V RL = 1.25 Rg = 4.7 IF = 16 A, VGS = 0 Note4 IF =16 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Page 2 of 6 RJK03F8DNS Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 15 10 s 10 PW = 10 ms 1 ra Operation in this area is 0.1 limited by RDS(on) n tio 50 100 150 0.01 1 shot Pulse 0.1 1 200 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 Pulse Test 2.9 V 2.8 V 16 12 Drain Current ID (A) 4.5 V 8V 2.7 V 8 4 16 VDS = 5 V Pulse Test 12 8 4 25°C Tc = 75°C VGS = 2.5 V 0 2 4 6 –25°C 8 0 10 1 2 3 5 4 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 240 160 ID = 10 A 80 5A 2A 3 6 9 12 Gate to Source Voltage VGS (V) REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Drain to Source On State Registance RDS(on) (mΩ) Drain to Source Voltage VDS (V) 320 0 100 Case Temperature Tc (°C) 20 Drain to Source Saturation Voltage VDS(on) (mV) μs μs Tc = 25 °C 0 Drain Current ID (A) 0 1m pe 5 10 10 O Drain Current ID (A) 100 DC Channel Dissipation Pch (W) 20 100 Pulse Test 30 10 VGS = 4.5 V 8V 3 1 1 3 10 30 100 Drain Current ID (A) Page 3 of 6 RJK03F8DNS Preliminary Typical Capacitance vs. Drain to Source Voltage 40 10000 Pulse Test 3000 Capacitance C (pF) 32 24 ID = 2 A, 5 A, 10 A 16 VGS = 4.5 V 8 8V 300 Coss 100 Crss 10 0 25 50 75 100 125 150 10 20 30 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 40 16 VGS 12 VDD = 25 V 10 V VDS 20 8 10 4 VDD = 25 V 10 V 0 0 0 Case Temperature Tc (°C) ID = 16 A 30 VGS = 0 f = 1 MHz 2 A, 5 A, 10 A 5 10 15 0 25 20 20 Reverse Drain Current IDR (A) 0 –25 50 Ciss 1000 30 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Drain to Source On State Registance RDS(on) (m) Static Drain to Source on State Resistance vs. Temperature 10 V 16 Pulse Test 5V 12 8 VGS = 0, –5 V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nc) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 20 IAP = 10 A VDD = 15 V duty < 0.1% Rg 50 16 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Page 4 of 6 RJK03F8DNS Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.2 0.1 θch − c(t) = γs (t) • θch − c θch − c = 10.0°C/W, Tc = 25°C 0.1 0.05 PDM 2 0.0 1 e 0 uls 0. p t ho 1s 0.03 0.01 10 μ D= PW T PW T 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) REJ03G1918-0100 Rev.1.00 Apr 21, 2010 10% tr 90% td(off) tf Page 5 of 6 RJK03F8DNS Preliminary Package Dimensions 3.3 ± 0.1 Previous Code ⎯ MASS[Typ.] 0.022g 2.9 ± 0.1 0.1 Min 3.3 ± 0.1 0.8 Max +0.15 −0.1 RENESAS Code PWSN0008JB-A 0.04Max 0Min Stand-off 0.22 Typ +0.15 −0.1 0.65 Typ (2.55) 0.32 ± 0.08 0.4 0.575 Typ 2.25 ± 0.2 0.4 JEITA Package Code P-HWSON8-2.9x3.1-0.65 1.55 ± 0.2 Package Name HWSON-8 3.1 ± 0.1 Ordering Information Part No. RJK03F8DNS-00-J5 Quantity 5000 pcs REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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