RENESAS RJK5012DPP_10

Preliminary Datasheet
RJK5012DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1545-0200
Rev.2.00
Jun 30, 2010
Features
 Low on-resistance
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
1. Gate
2. Drain
3. Source
G
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
Note4
ID
Note1
ID (pulse)
IDR
Note1
IDR (pulse)
Note3
IAP
Note3
EAR
Pch Note2
ch-c
Tch
Tstg
Ratings
500
30
12
24
12
24
4
0.88
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
PW  10 s, duty cycle  1%
Value at Tc = 25C
STch = 25C, Tch  150C
Limited by maximum safe operation area
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 1 of 6
RJK5012DPP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
500
—
—
3.0
—
Typ
—
—
—
—
0.515
Max
—
1
0.1
4.5
0.620
Unit
V
A
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1100
120
15
30
23
77
16
29
5.5
13
0.89
—
—
—
—
—
—
—
—
—
—
1.50
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
280
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VGS = 10 V Note5
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 6 A
VGS = 10 V
RL = 41.6 
Rg = 10 
VDD = 400 V
VGS = 10 V
ID = 12 A
IF = 12 A, VGS = 0 Note5
IF = 12 A, VGS = 0
diF/dt = 100 A/s
Notes: 5. Pulse test
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 2 of 6
RJK5012DPP
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
60
40
20
0
50
100
150
10
10
10
1
μs
μs
Operation in this
area is limited by
RDS(on)
0.01
1
1000
100
10
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
6V
7V
16
10 V
5.6 V
12
5.4 V
8
5.2 V
VGS = 5 V
4
VDS = 10 V
Pulse Test
50
5.8 V
Drain Current ID (A)
Pulse Test
20
10
5
2
1
Tc = 75°C
0.5
25°C
−25°C
0.2
0.1
0
4
8
12
16
0
20
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
Pulse Test
0.01
1
3
10
30
100
300
Drain Current ID (A)
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
1000
Static Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source on State Resistance
RDS(on) (Ω)
0
0.1
0.001
0.1
200
20
Drain Current ID (A)
Ta = 25°C
s
Drain Current ID (A)
100
m
=1
PW shot)
(1
Channel Dissipation Pch (W)
80
2.0
VGS = 10 V
1.6
1.2
ID = 12 A
3A
0.8
6A
0.4
Pulse Test
0
−25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 3 of 6
RJK5012DPP
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
10000
500
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
5
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
2
3
10
30
100
Reverse Drain Current
300
300
100
Coss
30
10
IDR (A)
8
16
0
24
Gate Charge
32
40
Qg (nC)
IDR (A)
4
VDD = 400 V
250 V
100 V
300
VDS (V)
20
Reverse Drain Current
8
200
0
16
12
VDS
200
Reverse Drain Current vs.
Source to Drain Voltage
VGS (V)
VDD = 100 V
250 V
400 V
600
400
VGS
100
Drain to Source Voltage
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
ID = 12 A
Crss
1
0
1000
Dynamic Input Characteristics
800
Ciss
1000
3
1
1
VGS = 0
f = 1 MHz
Pulse Test
16
12
10 V
8
5V
4
VGS = 0 V, −5 V
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
VGS(off) (V)
5
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
VDS = 10 V
0
-25 0
25
50
75
Case Temperature
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
100 125 150
Tc (°C)
Page 4 of 6
RJK5012DPP
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
TC = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θch–c(t) = γS (t) • θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
D = PW
T
PW
T
e
uls
tP
0.01
ho
1S
0.001
10 μ
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 250 V
Vin
Vout
10%
10%
10%
90%
td(on)
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
tr
90%
td(off)
tf
Page 5 of 6
RJK5012DPP
Preliminary
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
⎯
RENESAS Code
PRSS0003AB-A
Previous Code
T220FN
MASS[Typ.]
2.0g
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ3.2 ± 0.2
3.6 ± 0.3
15 ± 0.3
10 ± 0.3
14 ± 0.5
Unit: mm
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Part No.
RJK5012DPP-00-T2
Quantity
1050 pcs
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Shipping Container
Box (Tube)
Page 6 of 6
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