MB1F THRU MB10F Surface Mount Glass Passivated Bridge Rectifier Reverse Voltage - 50 to 1000 V Forward Current - 1 A Features • Glass passivated chip junction • Hight Surge Current Capability • Designed for Surface Mount Application Mechanical Data • Case: Molded plastic, MBF •Terminals: solderable per MIL-STD-750,Method 2026 E T H C Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. M E Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Average Rectified Output Current at Ta = 40℃ Peak Forward Surge Current 8.3 ms Single Half-sine-wave Superimposed on Rated Load (JEDEC Method) S Maximum Forward Voltage at 1 A Maximum DC Reverse Current at Rated DC Blocking Voltage at Ta = 25℃ at Ta = 125℃ Typical Junction Capacitance 1) Typical Thermal Resistance 2) Operating and Storage Temperature Range 1) Measured at 1 MHz and applied reverse voltage of 4 V 2) On glass epoxy P.C.B. mounted on 0.05" X 0.05" (1.3 X1.3 mm) pads Symbols MB1F MB2F MB4F MB6F MB8F MB10F Units VRRM 100 200 400 600 800 1000 V VRMS 70 140 280 420 560 700 V VDC 100 200 400 600 800 1000 V IF(AV) 1 A IFSM 30 A VF 1 V IR 5 100 µA CJ 13 pF RθJA RθJL 60 16 ℃/W Tj, Tstg - 55 to + 150 ℃ ™ ® SEMTECH ELECTRONICS LTD. TOP DYNAMIC ENTERPRISES LTD. Dated 23/07/2014 NY Rev: 01 MB1F THRU MB10F M E S E T H C ™ ® SEMTECH ELECTRONICS LTD. TOP DYNAMIC ENTERPRISES LTD. Dated 23/07/2014 NY Rev: 01 MB1F THRU MB10F PACKAGE OUTLINE MBF Plastic surface mounted package; 4 leads UNIT mm M E A 1.45 1.30 E T H C C D E HE d e L L1 a 0.22 4.75 4.00 6.85 2.65 0.80 1.70 1.10 0.15 0.18 4.45 3.50 6.55 2.35 0.60 1.30 0.85 0.00 RECOMMENDED SOLDERING FOOTPRINT S ∠ 7。 ™ ® SEMTECH ELECTRONICS LTD. TOP DYNAMIC ENTERPRISES LTD. Dated 23/07/2014 NY Rev: 01