KSH130 007F KSH13007F ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007F KSH13007F Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TJ TSTG 700 400 9 8 16 4 40 150 -65~150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Electrical Characteristics 8 Amperes NPN Silicon Power Transistor 80 Watts TC=25℃ unless otherwise noted TO-220F 1. Base 2. Collector 3. Emitter 12 3 TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=5V,IC=2A VCE=5V,I 5V,IC=5A 5A *Collector-Emitter Saturation Voltage VCE(sat) IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A 1 2 3 V V V *Base-Emitter Saturation Voltage VBE(sat) IC=2A,IB=0.4A IC=5A,IB=1A 1.2 1.6 V V Cob VCB=10V, f=0.1MHz Current Gain Bandwidth Product fT VCE=10V,I , C=0.5A Turn on Time ton Storage Time tstg Fall Time tF Output Capacitance Min Typ. Max 400 V 1 8 5 ㎃ 60 30 ㎊ 110 ㎒ 4 Vcc=125V, Ic=5A IB1=1A, IB2= -1A RL=50Ω Unit 1.6 ㎲ 3.0 ㎲ 0.7 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. Package Mark information. R hFE1 Classification 15 ~ 28 26 ~ 39 O O1(26~33), O2(31~39) Y S YWW Z KSH13007F S YWW Z SemiHow Symbol Y; year code, WW; week code hFE1 Classification 37 ~ 50 ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007F Typical Characteristics ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007F Typical Characteristics ( Continued ) ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007F Package Dimension TOTO -220F ±0.20 ±0 20 ±0.20 .20 ±0 2.54±0.20 6.6 68±0.20 0.70±0.20 12 2.42±0.20 3.30±0.20 2.76±0.20 1.47max 9..75±0.20 15.87±0.20 .18 3 φ 0.80±0.20 0.50±0.20 2.54typ 2.54typ Dimensions in Millimeters ◎ SEMIHOW REV.A1,Oct 2007