SEMIHOW KSC13003A

KSC130
003A
KSC13003A
◎ SEMIHOW REV.A1,Oct 2007
KSC130
003A
KSC13003A
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings
CHARACTERISTICS
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
700
400
9
1.5
3
0.75
20
150
-65~150
V
V
V
A
A
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter
Collector
Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
Electrical Characteristics
1.5 Amperes
NPN Silicon Power Transistor
20 Watts
TC=25℃ unless otherwise noted
TO-126
1. Base
2. Collector
3. Emitter
1
2
3
TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Breakdown Voltage
VCEO
IC=5mA, IB=0
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1
hFE2
VCE=2V,IC=0.5A
VCE=2V,IC=1A
Collector-Emitter Saturation Voltage
*Collector-Emitter
VCE(sat)
IC=0.5A,I
=0 5A IB=0.1A
=0 1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
0.5
0
5
1
3
V
V
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
1
1.2
V
V
Cob
VCB=10V, f=0.1MHz
Current Gain Bandwidth Product
fT
VCE=10V,IC=0.1A
Turn on Time
ton
Storage Time
tstg
Fall Time
tF
Output Capacitance
Min
Typ.
Max
400
Unit
V
10
9
5
㎂
40
㎊
21
㎒
4
Vcc=125V, Ic=2A
IB1=0.2A, IB2= -0.2A
RL=125Ω
1.1
㎲
4.0
㎲
0.7
㎲
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
hFE1
Classification
9 ~ 16
O
14 ~ 21
Y
19 ~ 26
S
S YWW
Z
KSC13003A
YWW
Z
SemiHow symbol
Y year code,
Y;
d
WW
WW; weekk code
d
hFE1 Classification
◎ SEMIHOW REV.A1,Oct 2007
KSC130
003A
Typical Characteristics
◎ SEMIHOW REV.A1,Oct 2007
KSC130
003A
Package Dimension
TOTO
-126
8.5max
0.2
2.8max
12max
3.8±0.2
±
.2
3
φ
13max
1.2±0.2
2.5±0.2
1 27typ
1.27typ
0.78±0.08
2.3max
0.5±0.1
2.3max
Dimensions in Millimeters
◎ SEMIHOW REV.A1,Oct 2007