KSC130 003A KSC13003A ◎ SEMIHOW REV.A1,Oct 2007 KSC130 003A KSC13003A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TJ TSTG 700 400 9 1.5 3 0.75 20 150 -65~150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Electrical Characteristics 1.5 Amperes NPN Silicon Power Transistor 20 Watts TC=25℃ unless otherwise noted TO-126 1. Base 2. Collector 3. Emitter 1 2 3 TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Emitter Breakdown Voltage VCEO IC=5mA, IB=0 Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=2V,IC=0.5A VCE=2V,IC=1A Collector-Emitter Saturation Voltage *Collector-Emitter VCE(sat) IC=0.5A,I =0 5A IB=0.1A =0 1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A 0.5 0 5 1 3 V V V *Base-Emitter Saturation Voltage VBE(sat) IC=0.5A,IB=0.1A IC=1A,IB=0.25A 1 1.2 V V Cob VCB=10V, f=0.1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.1A Turn on Time ton Storage Time tstg Fall Time tF Output Capacitance Min Typ. Max 400 Unit V 10 9 5 ㎂ 40 ㎊ 21 ㎒ 4 Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125Ω 1.1 ㎲ 4.0 ㎲ 0.7 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. Package Mark information. R hFE1 Classification 9 ~ 16 O 14 ~ 21 Y 19 ~ 26 S S YWW Z KSC13003A YWW Z SemiHow symbol Y year code, Y; d WW WW; weekk code d hFE1 Classification ◎ SEMIHOW REV.A1,Oct 2007 KSC130 003A Typical Characteristics ◎ SEMIHOW REV.A1,Oct 2007 KSC130 003A Package Dimension TOTO -126 8.5max 0.2 2.8max 12max 3.8±0.2 ± .2 3 φ 13max 1.2±0.2 2.5±0.2 1 27typ 1.27typ 0.78±0.08 2.3max 0.5±0.1 2.3max Dimensions in Millimeters ◎ SEMIHOW REV.A1,Oct 2007