Powered by Sensitron Silicon Carbide (SiC)Products Power MOSFETs Schottky Rectifier Discretes Schottky Rectifier Bridges Sensitron Semiconductor · 221 West Industry Court · Deer Park, NY 11729-4681 · Phone (631) 586 7600 · Fax (631) 242 9798 · www.sensitron.com · [email protected] 133-0214 Silicon Carbide Schottky Rectifier Discretes & Bridges 200 Ic = 20A, Vcc = 500V, Rg = 10 ohm Parameter Units Si Pin SiC % Reduction Peak reverse current Ipr (A) 23 4 83% Reverse recovery time Trr (nS) 100 33 67% Recovery charge Qrr (nC) 1220 82 93% Diode loss turn-off Eoff Diode (mJ) 0.23 0.02 91% Diode loss total Ets Diode (mJ) 0.26 0.05 81% IGBT loss turn-on Eon IGBT (mJ) 0.94 0.24 74% IGBT loss total Ets IGBT (mJ) 1.83 0.88 52% IGBT Switching Losses (watts) Features/Benefits: Essentially zero forward and reverse recovery Temperature independent switching behavior Positive temperature coefficient of VF Easily paralleled for higher current Electrical breakdown field 10x more than Si & GaAs Thermal conductivity over 3x that of Si & almost 10x GaAs 3x Bandgap of silicon Can operate at temperatures up to 300oC and frequencies in excess of 1MHz Smaller, lighter, more reliable Available screened to Mil-PRF-19500, TX, TXV or S-level Custom high voltage bridges are also available 180 Si Ultrafast Diode 150C 160 100C 140 50C 120 100 80 60 40 SiC SBD 20 0 10 20 30 40 50 60 70 80 90 100 Switching Frequency (kHz) Conduction losses SiC Schottky diodes saved 8W at 10KHz. SiC Schottky diodes saved 80W at 100KHz. The higher the switching frequency, the more apparent the SiC advantages. 10 8 6 By using SiC Schottky diodes,inverter losses are cut upto 30+% 4 2 600V, 10A SiC T J = 25, 50, 100, 150°C 0 600V, 10A Si FRED Efficiency is improved due to the reduction in switching losses, which allows the boost switch to operate at a lower temperature. -2 TJ = 25°C TJ = 50°C -4 TJ = 100°C TJ = 150°C -6 -8 -1.0E-07 -5.0E-08 -10 0.0E+00 5.0E-08 1.0E-07 1.5E-07 2.0E-07 SiC Schottky diode switching characteristics are unaffected by temperature, di/dt or forward current; all of which increase reverse recovery current in silicon diodes. Conclusion: Due to the lack of recovery charge, Schottky Diodes in SiC technology make very high pulse frequencies possible. Switching losses in the diode are negligible, and turn-on switching losses in a related switch become dramatically reduced. The soft switching characteristics guarantee good EMC behavior. © 2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] Silicon Carbide Power MOSFETs Part Number Operating Temperature (o C) Package Type PIV Max DC Output Current SHD619532 1200V 23A -55 to +150 LCC-3P SHD626532 1200V 20A -55 to +150 TO-257 SHDC626822 1200V 22A -55 to +150 TO-257 SHDC625822 1200V 31A -55 to +150 TO-254 SHDC625812 1200V 31A -55 to +150 TO-257 Silicon Carbide Schottky Rectifier Discretes PIV (V) Max DC Output Current Operating Temperature(o C)1 Package Type SHD626160/P/N/D* 300V 20A/ 40A/ 40A/ 20A -55 to +175 TO-257 SHD625160/P/N/D* 300V 20A/ 40A/ 40A/ 20A -55 to +175 TO-254 SHD626051/P/N/D* 600V 10A/ 20A/ 20A/ 10A -55 to +200 TO-257 SHD620051/P 600V 10A -55 to +200 LCC-5 SHD625061/D/N/P* 600V 20A /40A/ 40A/ 10A -55 to +200 TO-254 SHD620031 / P 600V 4A /8A -55 to +200 LCC-5 SHD626031/P/N/D* 600V 4A /8A /8A /4A -55 to +200 TO-257 Part Number SHD625051/P/N/D* 600V 10A /20A/ 20A /10A -55 to +200 TO-254 SHD687182 1200V 2A -55 to +200 SMD 0.2 SHD620052/P 1200V 5A/10A -55 to +200 LCC-5 SHD619052/P 1200V 5A/10A -55 to +200 LCC-3P SHD625052/P* 1200V 5A/10A -55 to +200 TO-254 SHD620112/P 1200V 10A/20A -55 to +200 LCC-5 SHD619112/P 1200V 10A/20A -55 to +200 LCC-3P SHDC624112/P/N/D* 1200V 10A/20A/ 20A/ 10A -55 to +200 TO-258 SHDC626112/P/N/D* 1200V 20A/ 40A/ 20A/ 40A -55 to +200 TO-257 SHDC624122/P/N/D* 1200V 20A/ 40A/ 20A/ 40A -55 to +200 TO-258 SHDC626052/P/N/D* 1200V 5A/ 10A/ 10A/ 5A -55 to +200 TO-257 SHDC624172/P/N/D* 1200V 50A/100A/ 100A/ 50A -55 to +200 TO-258 SHD619112/P 1200V 10A/ 20A -55 to +200 LCC-3P SHDC626182/P/N/D* 1200V 2A/ 4A/ 4A/ 2A -55 to +175 TO-257 SHD625112/D/N/P* 1200V 10A/ 20A/ 20A/ 10A -55 to +200 TO-254 *TO-254, TO-257, and TO-258 packages, high frequency option and ceramic seal options are available. High Frequency Option: Non-magnetic Gildcop leads are available for improved performance at high frequency; use part number prefix SHDG to order. Ceramic Seal Option: For ceramic seals, use part number prefix SHDC to order Silicon Carbide Schottky Rectifier Bridges Part Number PIV (V) Max DC Output Current Operating Temperature (o C) 1 Package Type SHB601031E 600V 8A -55 to +200 TO-258 SHD601051E 600V 14A -55 to +200 TO-258 SHB601052FP/N 1200V 5A -55 to +200 TO-258 SHB601052G 1200V 5A -55 to +200 TO-258 SHB601052E 1200V 10A -55 to +200 TO-258 SHB601112E 1200V 10A -55 to +200 TO-258 SHB681123E 2500V 20A -55 to +200 SCB-2 Note1: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device above 175oC may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C. © 2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] Applications High Temperature, High Current Environments AC DC Conversion Radar and Communications Continuous Current Mode Applications Space (Laser and Satellites) Down Hole Applications Visit online at: www.sensitron.com © 2014 Sensitron Semiconductor · 221 West Industry Court · Deer Park, NY 11729-4681 Phone (631) 586 7600 · Fax (631) 242 9798 · www.sensitron.com · [email protected]