Silicon Carbide (SiC) Product Selector Guide

Silicon Carbide (SiC)
Product Selector Guide
SiC for your Military, Aerospace,
and Down-Hole Applications
• Extreme Performance
ƒƒOperation Beyond Mil Temp
ƒƒElevated Temp Range (TJ), -55°C to +250°C
Applications
ƒƒRadiation Tolerance >100K RADs TID
• More efficient than Silicon, GaAs, & IGBT
ƒƒLower Conduction and Switching Loss
ƒƒFaster Switching Frequencies
ƒƒHigher Thermal Performance
Satellite Solar Inverters
• Screened in accordance with MIL-PRF-19500
• Metal / Ceramic Hermetic Packaging
ƒƒCeramic or glass eyelet options
ƒƒBeO free packaging options
Down-Hole Compressor
SiC Schottky Diodes
ƒƒ600 & 1200V Blocking Voltage
ƒƒ3 to 15 Amps IF
ƒƒEffective Zero Reverse & Zero Forward
Recovery
ƒƒHigh Frequency Operation
ƒƒHigh Speed Low Loss Switching
SiC FET’s & Transistors
ƒƒ1200V Breakdown Voltages
ƒƒVery Low On Resistance, 40mΩ to 180
mΩ typical at 25O C.
ƒƒSwitching Times In ns
ƒƒNo Tail Current, No Saturation Voltage
ƒƒLow Gate Charge
ƒƒPositive Temp Coefficient
Jet Engine Controls
MIL-SPEC Power Supplies
October 2013 Rev 4.0
2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com
Silicon Carbide (SiC) Schottky Diodes
NEW
PRODUCT
DEVELOPMENTS
Single SiC Power Schottky Diode
Part Number
Voltage
Absolute Max
Current
MYXDS0600-03AAS
600V
3A
MYXDS0600-05AAS
600V
5A
MYXDS0600-10AAS
600V
10 A
• High Voltage
MYXDS1200-03ABS
1200V
3A
MYXDS1200-05ABS
1200V
5A
• High Temperature
MYXDS1200-10ABS
1200V
10 A
MYXDS1200-15ABS
1200V
15 A
MYXDS3300P20ACS
3300V
0.2 A
MYXDS0600-03DA0
600V
3A
MYXDS0600-05DA0
600V
5A
MYXDS0600-10DA0
600V
10 A
from
Micross
• High Current
• High Reliability
• Small Outline
• Ceramic and Metal
• BeO Free
Package
Style
BeO
Free
Temperature
Elevated /
Extreme
Yes
250°C
TO-257
Flat LID
TO-257 Domed
LID
2 Pin TO-257
Domed LID
SMD 0.5
SiC Power Schottky Rectifier / Diode Bridge
Part Number
AC Inputs
Voltage
Absolute Max
Current
MYXDB600-10CDN
Dual Phase
600V
10A
MYXD3600-10CEN
Three Phase
600V
10A
Package
Style
BeO
Free
Temperature
Elevated /
Extreme
TO-258
5 PIN
Yes
250°C
TO-257 Flat Lid
TO-257 Flat Lid
TO-257 Domed Lid
2 Pin TO-257 Domed Lid
SMD 0.5
October 2013 Rev 4.0
2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com
Silicon Carbide (SiC) Transistors & MOSFETs
NEW
Single SiC Power MOSFETs
PRODUCT
DEVELOPMENTS
from
Micross
Part Number
Voltage
Absolute Max
Current
MYXMN1200-20CAB
1200 V
20 A
MYXMN1200-40CAB
1200 V
40 A
• Low RDS(on)
• High Temperature
• High Reliability
Part Number
Voltage
Absolute Max
Current
MYXS00650-07DA0
650 V
7A
MYXS00650-15DA0
650 V
15 A
• Ceramic and Metal
• BeO Free Options
TO-259
Temperature
Elevated /
Extreme
No
250°C
Package
Style
BeO Free
Temperature
Elevated /
Extreme
SMD 0.5
Yes
250°C
BeO Free
Temperature
Elevated /
Extreme
TO-258
Single SiC Super Junction Tansistors
• High Current
• High Voltage
BeO Free
Package
Style
Single SiC Power JFETs
Part Number
Voltage
Absolute Max
Current
Package
Style
MYXJ11200-17ABB
1200 V
17 A
TO-257 Domed
MYXJ11200-17BAB
1200 V
17 A
TO-254
MYXJ11200-17CAB
1200 V
17 A
MYXJ11200-34CAB
1200 V
34 A
No
250°C
TO-258
SiC Power Transistors Doubles & Half Bridges
TO-258 5 pin
TO-258
Part Number
Device Type
Voltage
Absolute Max
Current
Package
Style
BeO Free
MYXMH0600-20CDN
MOSFET
Half Bridge
600 V
2 x 20 A
TO-258
5 pin
Yes
MYXM21200-20GAB
MOSFET
Double
1200 V
2 x 20 A
MYXB21200-17GAB
JFET
Double
1200 V
2 x 17 A
TO-254
250°C
TO-259
SMD 0.5
Temperature
Elevated /
Extreme
No
TO-257 Domed Lid
October 2013 Rev 4.0
2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com
Part Numbering Rules for SiC Devices
SiC Device Nomenclature
Sample Part Number
Voltage*
Prefix
Package
MYXDS1200-15ABS
Device Type
Prefix
Code
Description
MYX
Micross
Current*
Isolating Ceramic
* Current values are in Amps and voltage in Volts.
* Current values are rated as Absolute Max values, working currents should be approximately half this value.
* Character “-” used to separate numberical values
* Character “P” to indicate decimal point.
Package
Device Type
Isolating Ceramic
Code
Device
Type
Code
Plating
Pins
Body
Eyelet
Lid
Code
Description
DS
Diode
Shottky
AA
Ni
3
TO-257
Ceramic
Flat
0
None
AB
Ni
3
TO-257
Ceramic
Domed
AC
Ni
2
TO-257
Ceramic
Domed
B
BeO
BA
Ni
3
TO-254
Ceramic
Flat
S
Silicon Nitride
BB
Au
3
TO-254
Ceramic
Flat
A
Alumina
BC
Au
3
TO-254 Tabless
Ceramic
Flat
N
Aluminium Nitride
CA
Ni
3
TO-258
Ceramic
Flat
D
Diamond
DB
Diode
2 Phase Bridge
D3
Diode
3 Phase Bridge
J1
JFET
Normally On
J0
JFET
Normally Off
MN
MOSFET
N Channel
MP
MOSFET
P Channel
CB
Au
3
TO-258
Ceramic
Flat
Glass
Flat
M2
MOSFET
2 Die N Type
CC
Ni
3
TO-258
MH
MOSFET
Half Bridge
CD
Ni
5
TO-258
Glass
Flat
BN
BJT
N Channel
CE
Ni
5
TO-258
Ceramic
Flat
BP
BJT
P Channel
DA
Au
3
SMD 0.5
-
Flat
B2
BJT
2 Die P Type
EA
Au
3
SMD 1
-
Flat
S0
SJT
Normally Off
FA
Au
3
SMD 2
-
Flat
S1
SJT
Normally On
GA
Ni
6
TO-259
Ceramic
Flat
For more information regarding our products and services, please visit www.micross.com or call +44 (0) 1420594180.
October 2013 Rev 4.0
2 Oriel Court, Omega Park • Alton, Hampshire, GU34 2YT, UK • +44 (0) 1420594180 • [email protected] • www.micross.com